加压条件下负载型杂多酸复合催化剂催化甲醇脱水制备二甲醚

合成了负载型杂多酸复合催化剂HSiW-La2O3/ γ-Al2O3,并用吡啶吸附IR光谱、NH32－TPD、N2吸附、UV－DRS、XPS和XRD等手段,对催化剂进行了表征,该催化剂具有中孔结构,表面上具有L酸和B酸,酸分布以弱酸为主,探讨了杂多酸含量,反应压力,反应温度入质量空速对甲脱水制备二甲醚转化率与选择性的影响,实验表明,当HSiW含量为105－16％时,催化剂活性,反应的最佳条件为压力0．75－0．85MPa(gauge),温度280－320℃,质量空速（MHSV）为1．5－2．5h^1。     

基于深紫外激光-光发射电子显微技术的高分辨率磁畴成像

基于磁二色效应的光发射电子显微镜磁成像技术是研究薄膜磁畴结构的一种重要研究手段,具有空间分辨率高、可实时成像以及对表面信息敏感等优点.以全固态深紫外激光(波长为177.3 nm;能量为7.0 eV)为激发光源的光发射电子显微技术相比于传统的光发射电子显微镜磁成像技术(以同步辐射光源或汞灯为激发源),摆脱了大型同步辐射光源的限制;同时又解决了当前阈激发研究中由于激发光源能量低难以实现光电子直接激发的技术难题,在实验室条件下实现了高分辨磁成像.本文首先对最新搭建的深紫外激光-光发射电子显微镜系统做了简单介绍.然后结合超高真空分子束外延薄膜沉积技术,成功实现了L10-FePt垂直磁各向异性薄膜的磁畴观测,其空间分辨率高达43.2 nm,与利用X射线作为激发源的光发射电子显微镜磁成像技术处于同一量级,为后续开展高分辨磁成像提供了便利.最后,重点介绍了在该磁成像技术方面取得的一些最新研究成果:通过引入Cr的纳米"台阶",成功设计出FePt的(001)与(111)双取向外延薄膜;并在"台阶"区域使用线偏振态深紫外激光观测到了磁线二色衬度,其强度为圆二色衬度的4.6倍.上述研究结果表明:深紫外激光-光发射电子显微镜磁成像技术在磁性薄膜/多层膜体系磁畴观测方面具备了出色的分辨能力,通过超高真空系统与分子束外延薄膜制备系统相连接,可以实现高质量单晶外延薄膜制备、超高真空原位传输和高分辨磁畴成像三位一体的功能,为未来磁性薄膜材料的研究提供了重要手段.     

Study of magnetic field expansion using a plasma generator for space radiation active protection

There are many active protecting methods including Electrostatic Fields, Confined Magnetic Field, Unconfined Magnetic Field and Plasma Shielding etc. for defending the high-energy solar particle events (SPE) and Galactic Cosmic Rays (GCR) in deep space exploration. The concept of using cold plasma to expand a magnetic field is the best one of all possible methods so far. The magnetic field expansion caused by plasma can improve its protective efficiency of space particles. One kind of plasma generator has been developed and installed into the cylindrical permanent magnet in the eccentric. A plasma stream is produced using a helical-shaped antenna driven by a radio-frequency (RF) power supply of 13.56 MHz, which exits from both sides of the magnet and makes the magnetic field expand on one side. The discharging belts phenomenon is similar to the Earth's radiation belt, but the mechanism has yet to be understood. A magnetic probe is used to measure the magnetic field expansion distributions, and the results indicate that the magnetic field intensity increases under higher increments of the discharge power.     

MgO单晶势垒磁性隧道结的第一性原理计算和实验研究

在MgO单晶势垒磁性隧道结中发现的室温高隧穿磁电阻现象,是近些年自旋电子学以及磁性隧道结磁电阻材料研究中的又一重大突破.本文主要评述和介绍2001年以来MgO单晶势垒磁性隧道结第一性原理计算和实验上的重要进展,以及介绍利用Layer-KKR第一性原理计算方法研究的Fe(001)/MgO/Fe、Fe(001)/FeO/MgO/Fe、Fe(001)/Mg/MgO/Fe、Fe(001)/Co/MgO/Co/Fe和Fe(001)[MgO/Fe/MgO/Fe等基于单晶MgO(001)单势垒及双势垒磁性隧道结材料的电子结构和自旋相关输运性质研究的最新进展.这些第一性原理定量计算的结果,不仅从物理上增强了对MgO单晶势垒磁性隧道结的电子结构和自旋相关输运特性的了解,而且对于研究新型室温磁电阻隧道结材料及其在自旋电子学器件中的广泛应用,具有一定的参考价值.     

纳秒脉冲空气辉光放电等离子体及应用

采用基于半导体断路开关的纳秒脉冲高压电源,在两个金属电极之间产生放电区间为1 600mm×100 mm×25 mm的常压辉光空气等离子体。等离子体发生器采用负高压针电极阵列与平板阳极结构,针电极的直径为1 mm,长度为20 mm,针电极之间的间隔为20 mm,针电极与平板零电位之间的距离为25mm,在每个负高压针电极末端周围同时形成圆锥形辉光放电,在平板地电极则形成大面积辉光放电。采用电压探针测量了该新型等离子体的放电特性,结果表明:放电脉冲的上升时间为26 ns,最高脉冲输出峰值电压为27 kV;利用该辉光等离子体对幅宽为1 000 mm聚四氟乙烯薄膜进行了表面改性处理,处理后其表面接触角由原来的124°降到69°,亲水性能大为提高。     

Characterization of ion-implanted 4H-SiC Schottky barrier diodes

Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I--V and C--V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I--V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal--semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I--V and C--V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance R_\rm s are 11.9 and 1.0~kΩ respectively. The values of barrier height φ _\rm B of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I--V method and 1.14 and 0.93 eV obtained by the C--V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2\% and 4\% respectively extracted from C--V testing results.     

介质阻挡放电净化恶臭气体的实验研究

低温等离子体技术是一种新型的污染治理技术,国内外都对其进行了广泛而深入的研究。等离子体是电子,正、负离子,激发态原子、分子,以及自由基混杂的状态,是一种高反应活性的气体,理论上可以引发许多用常规方法难以发生的化学反应,已在废气、废水、固体废物以及放射性废物等方面     

外延单晶La2/3Ca1/3MnO3-δ薄膜中磁电阻的磁场依赖关系

采用直流磁控溅射法在NdGaO₃ ( 110 )衬底上制备了La_2/3Ca_1/3MnO_3-δ外延单晶薄膜 .在 0～8T的磁场范围内测量了不同温区下的磁电阻随磁场的变化关系 .结果表明 ,ρ(H )遵循以下规律 :当温度高于居里温度T_C 时 ,ρ(H ) =1α(T) + β(T)H² ;当T <Tc时,ρ(H ) =ρ0(T ) +1A(T)+B(T)exp(H/C(T));而当温度远低于居里温度时,ρ(H ) =1σ(T) + ν(T)H。表明负巨磁电阻的产生主要起因于磁场引起的电导率的增加。     

Basic characteristics of an atmospheric pressure rf generated plasma jet

A plasma jet has been developed which operates using radio frequency (rf) power and produces a stable homogeneous discharge at atmospheric pressure. Its discharge characteristics, especially the dependence of stable discharge operating range on the feed gas, were studied, and the electric parameters such as RMS current, RMS voltage and reflected power were obtained with different gas flows. These studies indicate that there is an optimum range of operation of the plasma jet for a filling with a gas mixture of He and O_2. Two "failure" modes of the discharge are identified. One is a filamentary arc when the input power is raised above a critical level, another is that the discharge disappears gradually as the addition of O_2 approaches 3.2%. Possible explanations for the two failure modes have been given. The current and voltage waveform measurements show that there is a clear phase shift between normal and failure modes. In addition, I－V curves as a function of pure helium and for 1% addition of oxygen have been studied.     

H3+nPMo12-nVnO40(n=0,1)掺杂聚苯胺功能材料新的 制备方法及性质

本文用一种新的合成方法,即不用其他质子酸和氧化剂,利用H3PMo12O40·nH2O和H4PMo11VO40·nH2O杂多酸独特的性质—集质子酸和氧化性于一身,将HPA直接与苯胺作用,制备了仅以杂多阴离子为唯一掺杂抗衡离子的PANI/HPA掺杂材料。所合成的材料具有导电性和荧光性。