双分布聚乙二醇接枝纳米二氧化硅的高效可控制备

在混合溶剂中通过"grafting to"的方法将2种分子量不同的聚乙二醇单甲醚(MPEG M_w=750,4000)接枝到氨基修饰的St?ber法二氧化硅(SiO_2-NH_2)表面,制备双分布纳米接枝复合物.采用二步法,先将带环氧端基的低分子量聚乙二醇单甲醚(MPEG-EO)与SiO_2-NH_2在甲苯溶剂中充分反应后,与高分子量的MPEG-EO在甲苯和正癸烷的混合溶剂中使用相同的反应条件和后处理方法,能便捷制备出具有双分布接枝的纳米复合物.在接枝反应体系中,分子链的链段尺寸和接枝密度之间存在着密切关系.一定的范围内,接枝密度随链段尺寸减小而增大.通过改变混合溶剂比例来调控接枝链段的尺寸,可以很好控制聚合物的接枝密度.在双分布接枝的纳米复合物中,低分子量的接枝密度为0.85 chains/nm~2,高分子量的接枝密度能达到0.40 chains/nm~2,体现出了简单、高效、可控的特点,与聚环氧乙烷(PEO)共混后分散良好,对于制备出均匀分散的纳米复合材料起到了一定的指导作用.     

正交异性板条的渐近分析

本文阐明由三维薄弹性体的渐近分析导出各级精度板壳理论的基本方法。将多尺度分析用于板的内部区域和边界层区域导出应力,应变和位移等物理量的不同的无量纲小厚度参数ε的渐近展开式。与工程的方法不同,推导仅基于ε→0的渐近分析,对板的变形不做任何假定。给出正交异性板的平面应变渐近展开的具体列式,仅有一些常数待定。结果表明,内域解渐近级数的首项正是熟知的Kirchhoff板理论解。本文为内域解和边界层解的渐近匹配,从而正确表述圣维南原理并用以建立各级渐近解的边界条件进而求解的研究做好了准备。     

基于扩展度的复杂网络传播影响力评估算法

对网络中节点的传播影响力进行评估具有十分重要的意义, 有助于促进有益或抑制有害信息的传播. 目前, 多种中心性指标可用于对节点的传播影响力进行评估, 然而它们一般只有当传播率处于特定范围时才能取得理想的结果. 例如, 度值中心性指标在传播率较小时较为合适, 而半局部中心性和接近中心性指标则适用于稍大一些的传播率. 为了解决各种评估指标对传播率敏感的问题, 提出了一种基于扩展度的传播影响力评估算法. 算法利用邻居节点度值叠加的方式对节点度的覆盖范围进行了扩展, 使不同的扩展层次对应于不同的传播率, 并通过抽样测试确定了适合于特定传播率的层次数. 真实和模拟数据集上的实验结果表明, 通过扩展度算法得到的扩展度指标能在不同传播率下对节点的传播影响力进行有效评估, 其准确性能够达到或优于利用其他中心性指标进行评估的结果.     

假定螺栓直径的优选法

本文应用“优选法”即黄金分割法的原理，确定螺栓的假定直径，大大提高了螺栓的设计效率．     

磁共振现代射频脉冲理论在非均匀场成像中的应用

在磁共振非均匀场成像中，传统的射频脉冲导致回波信号的衰减.为了减小和消除这种磁共振信号的衰减，在讨论了经典理论的基础上根据非线性动力学中的逆散射理论和Shinnar-Le Roux方法导出了用于非均匀场成像的射频脉冲设计方法.模拟结果表明，采用逆散射理论和Shinnar-Le Roux方法优化的脉冲序列可以明显提高信号的信噪比. 关键词： 磁共振成像 射频脉冲 非线性系统     

新型含氟α-氨基膦酸酯的合成和晶体结构

利用含氟苯基亚胺与亚磷酸酯反应,合成了新型含氟α-氨基膦酸酯,通过元素分析、红外光谱、质谱、核磁共振氢谱对其结构进行了表征.X射线单晶衍射测试结果表明:化合物为三斜晶系,空间群P1,a=1.0178(6)nm,b=1.0354(6)nm,c=2.2534(13)nm,α=77.413(10)°,β=78.340(10)°,y=77.540(10)°,V=2.233(2)nm3,Z=4,Dc=1.289 Mg·m-3,μ=O.175 mm-1,F(000)=904.0,最终偏离因子R=0.0728,wR=0.1724.     

Windows9X API的拦截技术

介绍了在Windows9X环境下拦截Windows9X API函数的几种方法。     

Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra.The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature,commonly assumed to be more favourable for As activation,has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39),(ii) the density of V Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers,and (iii) the V Hg prefers forming the V Hg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density,which makes it difficult to annihilate V Hg in As-doped epilayers.As a result,the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.     

A self-powered and sensitive terahertz photodetection based on PdSe2

With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology, medical sciences, and communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe₂). An order of magnitude performance enhancement was observed in photodetection based on PdSe₂/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1-THz and 0.3-THz irradiations, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1-THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe₂ in terms of air-stable, suitable sensitivity and speed, which may have great application in terahertz detection.     

半导体激光自混合干涉类锯齿波成立条件

本文从激光系统稳态条件出发,建立了具有普遍意义的半导体激光自混合干涉系统模型,通过仿真分析,结果表明：在较强光反馈水平时,自混合干涉信号并非都是类锯齿波形。波形形状受光反馈水平及激光器线宽展宽因数的共同制约。本文结果对激光自混合干涉技术的应用具有重要的指导意义。