Tb3+，Sm3+掺杂的YNbO4多色荧光材料的制备及发光性能

采用溶胶-凝胶法合成了YNbO4∶Tb^3+,Sm^3+系列荧光粉。光谱测试表明:体系中的NbO43-基团能够吸收紫外光并将能量传递给Tb^3+和Sm^3+,从而增强荧光粉的发光强度。在290 nm激发下,YNbO4∶Tb^3+,Sm^3+荧光粉的发射光谱中既出现了Tb^3+的绿光发射又出现了Sm^3+的橙光发射。通过改变Sm^3+的掺杂浓度,实现了荧光粉发射光的光色可调。     

人工硒酶设计新策略

作为人体内重要的抗氧化酶,谷胱甘肽过氧化物酶受到人们越来越多的关注.为探索其催化机制,并开发极具潜力的抗氧化药物,国际上广泛开展了人工模拟谷胱甘肽过氧化物酶的研究工作.基于化学、生物学、超分子科学以及纳米科学及其深度交叉,人们研究构建了从小分子到大分子,再到纳米等不同结构的谷胱甘肽过氧化物酶模拟物.本文主要综述本研究组和其他研究组基于以大分子为骨架设计人工谷胱甘肽过氧化物酶的研究思路和策略.研究体系包括合成的大分子硒酶模型、自组装大分子硒酶模型和生物大分子硒酶模型等.     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

A GaN/Al_0.3Ga_0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO₂ insulator (HfO₂-FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO₂-FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO₂ insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.     

Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.     

溶胶-凝胶法合成KGd(WO4)2:Eu3+红色荧光粉及其发光性质的研究

采用溶胶-凝胶法合成KGd(WO4)2:Eu3+红色荧光粉.该荧光粉的性质通过X射线粉末衍射、扫描电子显微镜、激发谱、发射谱以及荧光衰减曲线来表征.KGd(WO4)2:Eu3+的激发谱主要由中心大约在270nm处的宽谱峰以及一系列由Eu3+离子f-f电子能级跃迁导致的锐线峰组成,在近紫外区有一个最强的激发峰在395nm.正好与紫外InGaN发光二极管(LED)芯片发射波长匹配.在395nm激发下,可以观察到最佳掺杂量为40%(原子分数)的KGd(WO4)2:Eu3+在614nm处产生强烈的红光.发光特性表明,KGd(WO4)2:Eu3+荧光粉可能潜在成为近紫外发光二极管(LEDs)用的红色荧光粉.     

航空光电成像系统像移补偿技术研究

航空光电成像系统由于像移的存在导致成像分辨率下降,严重影响航空光电系统的整机性能。采用像移补偿技术可以提高航空光电系统成像质量。分析了移动探测器像移补偿技术原理与运动光学元件像移补偿技术原理,重点研究了基于快调反射镜(FSM)的高精度像移补偿技术。通过工程简化分析,分别推导了快调反射镜位于平行光路和会聚光路的像移补偿随动角度规律,并针对会聚光路中快调反射镜带来的离焦量进行分析,讨论了离焦量对光学系统波像差的影响。仿真结果表明,随着离焦量的增加,波像差呈线性增大趋势。通过分析光学系统波像差对其光学调制传递函数（MTF）的影响,结果表明F数等于8,在奈奎斯特频率处,当离焦量在0.1 mm以内,光学调制传递函数MTF的下降量在26.6%以内。     

基于不相似度评价的水下声目标分类与听觉特征辨识

本文旨在探索人类被试对水下声目标的感知分类及在该过程中所利用的听觉特征.首先设计了成对比较实验.然后利用CLASCAL算法对实验获得的不相似度评分进行建模,获得感知空间,并分析了3个公共维度、特异性和3个被试潜类各自的特性及其在目标感知分类中所起的作用.最后,基于Gammatone听觉滤波器组对声样本进行分析,发现了能够有效描述3个公共维度以及节拍特性的听觉特征,并利用它们构造决策树对新样本实现了分类,从而为实际中如何应用这些特征提供了指导.     

LED用La2(WO4)3∶Eu3+红色荧光粉合成及光谱性能

 采用水热法并进行热处理成功合成了Eu3+掺杂La2(WO4)3红色荧光粉.通过粉末X射线衍射、扫描电子显微镜,以及能谱来表征荧光粉的晶体结构、颗粒大小、形貌及成分|用激发光谱和发射光谱以及荧光衰减曲线来表征荧光粉的荧光性能.X射线衍射分析确认了水热的前驱体和后期热处理的样品主要相分别为三斜晶系的La2W2O9和单斜晶系的La2(WO4)3.激发光谱表明La2(WO4)3∶Eu3+荧光粉样品在395 nm处有一个最强的吸收峰,与紫外InGaN LED芯片发射波长相匹配|而且La2－xEux(WO4)3荧光粉在395 nm激发下有强红光发射.因此,La2－xEux(WO4)3荧光粉有望成为新一代白光LED用的红色荧光粉.     

Improvement and error analysis of quantitative information extraction in diffraction-enhanced imaging

Diffraction-enhanced imaging （DEI） is a powerful phase-sensitive technique that provides higher spatial resolution and supercontrast of weakly absorbing objects than conventional radiography. It derives contrast from the X-ray absorption, refraction, and ultra-small-angle X-ray scattering （USAXS） properties of an object. The separation of different-contrast contributions from images is an important issue for the potential application of DEI. In this paper, an improved DEI （IDEI） method is proposed based on the Gaussian curve fitting of the rocking curve （RC）. Utilizing only three input images, the IDEI method can accurately separate the absorption, refraction, and USAXS contrasts produced by the object. The IDEI method can therefore be viewed as an improvement to the extended DEI （EDEI） method. In contrast, the IDEI method can circumvent the limitations of the EDEI method well since it does not impose a Taylor approximation on the RC. Additionally, analysis of the IDEI model errors is performed to further investigate the factors that lead to the image artifacts, and finally validation studies are conducted using computer simulation and synchrotron experimental data.