Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.     

组合KdV方程的显式精确解

借助计算机代数系统Mathematica，利用双曲函数法找到了组合KdV方程(Combined KdV Equation)的精确孤立波解，包括钟型孤立波解和扭结型孤立波解.在此基础上又对双曲函数法的思想进行了推广，从而获得了其更多的显式精确解，包括间断型激波解和指数函数型解.这种方法也适用于求解其他非线性发展方程(组). 关键词： 组合KdV方程 双曲函数法 孤立波解 精确解     

CPA方程计算醇+卤代烃体系气液相平衡

醇+卤代烃混合体系,尤其是乙醇、三氟乙醇(TFE)等与卤代烃的混合工质在吸收式制冷、热泵、蒸气动力循环等领域中有着重要的应用.CPA方程可以描述缔合流体的性质,用于含醇类组元的混合体系气液相平衡性质描述.本文首先从纯物质饱和性质实验数据回归得到了CPA方程参数;将CPA方程应用于醇+卤代烃混合体系的气液相平衡计算,采用并比较了2种缔合方案;比较了CPA方程与G~E-EoS模型的相平衡计算效果.CPA状态方程在揭示分子间相互作用的基础上可准确描述醇+卤代烃混合体系的气液相平衡性质.     

Modulational instability of ion—acoustic waves in a warm plasma

Using the standard reductive perturbation technique,a nonlinear Schroedinger equation is derived to study the modulational instability of finite-amplitude ion-acoustic waves in a non-magnetized warm plasma.It is found that the inclusion of ion temperature in the equation modifies the nature of the ion-acoustic wave stability and the soliton stuctures.The effects of ion plasma temperature on the modulational stability and ion-acoustic wave properties are inestigated in detail.     

∣x∣在调整的第二类Chebyshev结点组的有理插值

本文研究了Newman型有理算子逼近|x|的收敛速度,插值结点组X取调整的第二类Chebyshev结点组.利用上界估计得到确切的逼近阶为O 1n2.这个结果优于结点组取作第一、二类Chebyshev结点组、等距结点组和正切结点组.     

宽视场高分辨率闭路监控系统监控镜头设计

为了满足新形势下闭路监控系统（CCTV）对拍摄视场和高清分辨率的要求,设计了一款复杂化的反摄远型全球面结构的CCTV镜头。该镜头的全视场为80,F#为3,焦距为5 mm,光谱范围为486 nm~656 nm。采用像元尺寸为7.5 m7.5 m,1.27 cm(1/2英寸)的CCD成像。该镜头在奈奎斯特频率67 lp/mm处,全视场MTF接近0.65;在1/2奈奎斯特频率处调制传递函数（MTF）大于0.85;在220 lp/mm处,全视场MTF大于0.3,已经接近衍射极限。镜头像面波前PV值为0.077 9,RMS为0.015 9,达到了瑞利判据的要求。设计评价结果表明,该镜头像差校正满足CCTV监控镜头的成像质量要求。     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

高速列车隧道会车空气阻力数值模拟研究

建立计算流体力学三维数值仿真模型,采用三维可压缩非定常湍流模型,利用重叠网格方法对高速列车隧道内等速交会过程进行动态数值模拟,分析会车过程中列车所受空气阻力的形成机理及分布特性。计算结果表明:隧道交会过程中,压差阻力对列车空气阻力的变化起主导作用,隧道交会对阻力峰值及峰峰值的影响比隧道单车大得多;列车隧道内交会时最大空气阻力是明线时的2.65倍,对应时刻的压差阻力和摩擦阻力分别为明线时的3.35倍、1.36倍;在交会完成前,头车表现为产生与速度方向相同的"推力",并呈现先增大后减小的趋势;尾车阻力最大,也呈现先增大后减小的趋势。     

基于集中质量法的普通圆锯片及基体开槽圆锯片振动响应分析

针对普通圆锯片及基体开槽圆锯片的振动响应问题,首次引入集中质量法建立了圆锯片无阻尼多自由度弹簧-质量系统模型。将开槽等效为去除槽分布对应区域内的弯曲弹簧,分别构造了普通圆锯片、基体开径向槽以及周向槽三类圆锯片振动系统模型的质量矩阵与刚度矩阵,并进行了简谐激励响应分析。采用振幅强度因子作为衡量锯片振动强度的指标,通过求解获得了振幅强度因子与频率关系的幅频响应特性曲线,将计算结果同有限元法的结果进行对比分析,结果表明:当峰值对应频率在0~750Hz范围内时,二者的一致性较好;当峰值对应频率大于750Hz时,开始出现较大偏差,验证了集中质量法用于计算圆锯片结构低频固有特性的正确性。本文研究结果对于求解存在几何缺陷的连续体弹性薄板的振动响应具有一定的参考价值。     

THE ANALYTICAL STUDY ON THE LASER INDUCED REVERSE－PLUGGING EFFECT BY USING THE CLASSICAL EIASTIC PLATE THEORY（I）─TEMPERATURE FIELDS

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