食品中硒含量的测量不确定度评定

根据原子荧光光谱法测定食品中硒的含量,分析了测量不确定度的主要来源,即校准曲线不确定度、样品预处理不确定度、测量重复性不确定度.计算得到食品中硒的测定结果的合成标准不确定度为0.15μg/kg,扩展不确定度为0.3μg/kg.     

一种木醋液制备环保型融雪剂的方法

提出了一种采用木醋液制备醋酸盐环保型融雪剂的方法:二次蒸馏法,即用一次蒸馏的粗制木醋液与碳酸钙反应制备醋酸钙,然后将反应液二次蒸馏使醋酸钙析出制得融雪剂.通常用木醋液制备融雪剂采用的方法是反应制备醋酸盐—活性炭脱色—浓缩或结晶和二级蒸馏富集乙酸—反应制备醋酸盐—浓缩或结晶.二次蒸馏法与二者相比,它除去了木醋液中的焦油、...     

Simulation of the light extraction efficiency of nanostructure light-emitting diodes

The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.     

取向结构和梯度分布医用材料的制备及应用

组织器官缺损或功能损失是人类健康所面临的重大危害,具有特定结构和组成的再生医学材料是实现组织再生与修复的关键和物质基础。本文对具有取向结构和梯度分布的再生医学材料的制备方法及其生物学性能进行了综述。与传统的再生医学材料相比,取向结构使得细胞在支架中呈取向分布和生长,有利于营养物质及代谢产物的传递,可用于构建具有取向结构的三维组织。具有物理性能、化学组成、生物因子梯度分布的再生医学材料能够调控细胞在梯度方向的黏附、迁移和分化等行为。基于仿生学原理设计的具有取向结构和梯度分布的再生医学材料为缺损组织或器官的再生与修复提供了更适宜的微环境,可望获得更出色的再生修复效果。     

聚变-裂变混合堆系统在能源战略中的地位及其设计中若干问题的分析

简要描述聚变-裂变混合堆在长期能源发展战略中的地位,着重计算分析具有不同类型的聚变堆芯和包层的混合堆生产电能和可裂变核燃料的能力,研究不同类型聚变-裂变混合堆与其支持的卫星堆(如压水堆)组合燃料循环系统生产电能的能力.指出以天然铀或贫化铀为燃料,水冷却的包层设计是一种经济可行、技术风险较小的设计方案.     

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5~nm/5~nm) film deposition. The surface morphology of wafers and the current--voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes.     

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters,such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition,using an in-plane grazing incidence x-ray diffraction technique.The results are analysed and compared with a complementary out-of-plane xray diffraction technique.The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method.The method for directly determining the in-plane lattice parameters of the GaN layers is also presented.Combined with the biaxial strain model,it derives the lattice parameters corresponding to fully relaxed GaN films.The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established,reaching to a maximum level of-0.89 GPa.     

Time delay in InGaN multiple quantum well laser diodes at room temperature

This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes.The delay time decreases as the pumping current increases,and the speed of the delay time reduction becomes slower as the current amplitude increases further.Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire.It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action.The traps can be bleached by capturing injected carriers.The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.     

硝基甲烷异构化反应势能面的ab initio研究

在B3LYP/6-311+ +G(2d,2p)水平上,优化得到硝基甲烷CH3NO2的10种异构体和23个异构化反应过渡态,并用G2MP2方法进行了单点能计算.根据计算得到的G2MP2相对能量,探讨了CH3NO2势能面上异构化反应的微观机理.研究表明,反应初始阶段的CH3NO2异构化过程具有较高的能垒,其中CH3NO2的两个主要异构化反应通道,即CH3NO2→CH3ONO和CH3NO2→CH2N(O)OH的活化能分别为270.3和267.8 kJ/mol,均高于CH3NO2的C-N键离解能.因而,从动力学角度考虑, CH3NO2的异构化反应较为不利.     

沉痛悼念国际著名电化学家——ErnestB.Yeager教授

国际著名化学家 ,理论电化学奠基人 ,美国ＣａｓｅＷｅｓｔｅｒｎＲｅｓｅｒｖｅ大学 (ＣＷＲＵ )ＥｒｎｅｓｔＢ .Ｙｅａｇｅｒ教授于 2 0 0 2年 3月 8日不幸逝世 ,享年 77岁 .科学巨星殒落 !学界为之悲恸 !Ｙｅａｇｅｒ教授是国际上公认的电化学界权威 ,一生都贡献给科学事业 ,他把毕生的精力用于探索电化学基本过程的本质 ,在他近 5 0年的科研生涯中共发表学术论文 2 70篇 ,编写专著2 0部 ,为后人留下了非常宝贵的知识财富 .Ｙｅａｇｅｒ教授是开发燃料电池的先驱 ,早在 1 976年于美国国家能源问题与自然资源保护会议上 ,他就预言今后电…