3-芳基-5-噻吩基二氢吡唑磺酰胺衍生物的合成及其抗炎活性研究

二氢吡唑是一类含有多种生物活性的五元氮杂环化合物,广泛存在于各种活性天然产物结构中。本文由4-氟苯乙酮和N-甲基哌嗪经取代反应后,再与2-噻吩甲醛发生羟醛缩合生成哌嗪取代噻吩查尔酮(2)。化合物2与水合肼环化得到中间体化合物3,最后经磺酰氯衍生化,合成得到8个未见报道的3-芳基-5-噻吩基二氢吡唑磺胺衍生物(4a～4h),其结构均经IR、~1H NMR和~(13)C NMR确证。采用小鼠巨噬细胞Raw264. 7模型初步测试了衍生物的抗炎活性,结果表明,化合物4a、4e和4h具有潜在的体外抗炎活性,特别是化合物4a抑制NO生成的IC_(50)值为12. 64μmol/L,与阳性对照药地塞米松活性相当。     

Bi2WO6/UiO-66复合材料的制备及其光催化性能

通过水热法制备了一种复合光催化剂Bi_2WO_6/UiO-66,探究了模板剂乙酸(CH_3COOH)对Ui O-66形貌的影响和2种中心元素Bi与Zr的不同物质的量之比对光催化性能的影响。通过XRD、SEM、N_2吸附-脱附、UV-Vis DRS、XPS等对催化剂的物相、形貌、比表面积、光吸收性能、元素组成等进行表征。实验结果表明,当n_(Bi)∶n_(Zr)=2∶1时,Bi_2WO_6/UiO-66对罗丹明B(RhB)的光催化活性最高,可见光照射50 min后,RhB的相对浓度降低98.5%。经过5次循环利用实验,催化剂的光催化活性没有明显下降,说明复合光催化剂的稳定性高。根据自由基捕获实验证明了空穴(h~+)为光催化中起决定性作用的活性物质,结合电化学测试以及UV-Vis DRS表征提出了可能的光催化降解机理。     

3位间接连接有叔胺(仲胺)氮原子的3-季碳氧化吲哚化合物的合成

以3-卤氧化吲哚为起始原料,1,8-二氮杂二环十一碳-7-烯为催化剂,在二氯甲烷中与1-甲基吲哚经取代反应,或在甲苯溶液中于120 ℃条件下与吲哚（吲哚苯环上可连接有取代基）直接发生取代反应,合成了7个3位间接连接有叔胺（仲胺）氮原子的3-季碳氧化吲哚化合物,收率分别为80%~89%和 53%~70%,其结构经¹H NMR, ¹³C NMR和HR-MS（ESI-TOF）表征。     

常用制冷工质稠密流体的黏度推算方法

本文通过关联无量纲化剩余黏度与对比密度的关系,提出了一种推算常用制冷工质稠密流体黏度的维里型黏度状态方程.应用该方程只需已知该工质的临界参数、分子量和偏心因子即可完成计算,使得迁移性质的计算在热力学面上和平衡性质的计算保持了完整的一致性.本文通过上述方法计算了9种常用制冷工质的液相黏度,与实验数据比较显示,总平均偏差为2.36%,最大偏差为27.6%.     

An All-Thin-Film Electrochromic Device Composed of MoO3--LiBSO--NiOx Multilayer Structure

An all-thin-tilm （ATF） electrochromic device for modulating the optical transmittance is manufactured using magnetron sputtering. The devices consists of MoO3 as the main electrochromic layer, LiBO2 ＋Li2SO4 （LiBSO） as the ion conductor layer, and NiOx as the complementary electrochromic layer. Glass covered with indium tin oxide （ITO） is used as the substrate and the ITO film is used as the bottom electrode. The ITO film deposited on the top of the devices is used as the other electrode. The structure and morphology of the films are characterized by x-ray diffraction （XRD） and scanning electron microscopy （SEM）. The devices exhibit good optical properties with low transmittance values in the coloured state, and the optical modulation is measured by spectrophotometer in the wavelength range from 400 to 800nm. The average visible light transmittance reaches 50.2% and 3.7% in bleached and coloured state, respectively. The results indicate that such a monolithic system has great potential to be applied in smart windows.     

Sudden Death of Entanglement between Two Atoms with Initial Tripartite Entangled State in the Tavis--Cummings Model

We study the entanglement dynamics of two atoms with initial tripartite entangled W-like state in the Tavis-Cummings model. We find that the entanglement evolvement is sensitive not only to the entanglement degree of the initial state but also to the concrete form of the initial state. The so-called sudden death effect occurs only for some initial states.     

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region （centred at about 12 μm）. After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm （centred at 10 μm） within wide incidence angles （about 50°）, is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.     

L-Shell X-Ray Yields and Production Cross Sections of Zr and Mo Bombarded by Slow Highly Charged Ar16+ Ions

The L-shell x-ray yields of Zr and Mo bombarded by slow Ar16＋ ions are measured. The energy of the Ar^16＋ ions ranges from about 150 keV to 350 keV. The L-shell x-ray production cross sections of Zr and Mo are extracted from these yields data. The explanation of these experimental results is in the framework of the adiabatic direct- ionization and the binding energy modified BEA approximation. We consider, in the slow asymmetric collisions such as Ar and Mo/Zr, the transient united atoms （UA） are formed during the ion-surface interaction and the direct-ionization is the main mechanism for the inner-shell vacancy production. Generally, the theoretical results are in good agreement with the experimental data.     

Blow-up and Global Smooth Solutions for Incompressible Three-Dimensional Navier--Stokes Equations

We present some explicit self-similar blow-up solutions and some other solutions of the incompressible threedimensional Navier Stokes equations. These solutions indicate that in C^∞ the solution of Navier-Stokes equations does not always tend to a solution of Euler equations.     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si1-xGex合金半导体材料中CiCs 缺陷的性质进行探讨,同时也对比调查了CiOi 缺陷在Si和Si1-xGex合金中的性质. 在不同Ge含量的Si1-xGex合金中CiCs和CiOi缺陷的结构都具有较好的稳定性;从能量学角度,Ge原子不能与C或O原子直接成键. CiCs缺陷的A型和B型结构在Si1-xGex合金中表现出的行为基本类似,但是A型结构随着Ge含量的增加形成能逐渐减小,结构越来越稳定,而B型结构的形成能先有所下降后逐渐增加;A型和B型结构的能量差值随着Ge含量的增加先在小范围内变化后迅速下降. CiOi缺陷形成能的变化特征较为复杂. 纯Si体系在1000K及以上温度的等温退火过程中,CiCs缺陷的A型结构会向B型结构转变;Si1-xGex合金在进行等温退火时CiCs缺陷的A型结构的变化特征与退火温度、Ge含量和Ge取代的位置等因素有关.