High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

pH值对KDP晶体中散射颗粒的影响

探讨了不同pH值对KDP晶体散射颗粒的影响。结果表明,不同pH值生长条件下生长的KDP晶体中散射颗粒的尺寸、密度呈现明显差异,pH值为5.5条件下KDP晶体中散射颗粒尺寸明显变大,分布稀疏;pH值为2.0时,散射颗粒密度高,尺寸小。其原因在于形成散射的杂质颗粒的存在形式不同。     

光阴极注入器型能量回收射频加速器

光阴极注入器型能量回收射频加速器（PERL）是新一代加速器,在高平均功率自由电子激光和下一代高亮度光源等研究中有很好的应用前景。分析了PERL的强流与高平均功率特性,对注入器输出束流品质的要求及光阴极注入器、超导加速腔等关键技术进行了研究,设计分析了一种特殊结构的高压DC Gun光阴极注入器,能有效地提高DC加速腔中的加速场强,当高压为1MV和加速场达到10MV/m时,产生的电子束流能够基本满足PERL应用要求。同一超导加速段中的束流加速和能量回收的数值模拟计算结果表明,能获得高效率电子束流能量回收效果。     

Mo的引入方式对CeO2脱硝性能的影响

固定源排放的氮氧化物(NOx)导致了严重的环境污染问题,NH3选择性催化还原(NH3-SCR)被认为是目前控制NOx排放的最有效技术,已广泛应用于电力行业的烟气排放治理.然而,我国非电行业的NOx减排仍然面临着重大挑战,因为其排放的废气温度通常低于300oC,且含有一定量的SO2,传统的钒基SCR催化剂因活性温度(30...     

国内自动滴定仪首次成功运用于双氧水中控分析检测

巴陵石化化肥事业部为年产10万t双氧水装置配套引进的两台"自动点位滴定仪"试运行"满月",双氧水的氢化效率和氧化效率的分析检测时间由原来的30 min缩短到10 min以内,每年可节约人工及试剂成本12万元。该仪器的投用,     

德国LC Tech公司黄曲霉素检测全解决方案

黄曲霉毒素是到目前为止所发现的毒性最大的真菌毒素，它可通过多种途径污染食品和饲料，直接或间接进入人类食物链，威胁人类健康和生命安全，对人体及动物内脏器官尤其是肝脏损害严重，该毒素是黄曲霉和寄生曲霉中产毒菌株的代谢产物，普遍存在于霉变的粮食及粮食制品中。     

An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

基于遗传算法的升力体外形优化设计

升力体由于低热流率再入物理特性和高效的内部容积利用率，是高超声速飞行器气动外形的一种典型布局.文章对升力体飞行器进行参数化数值建模，并提取其表征外形的参数作为设计变量，综合考虑飞行器再入过程中的气动力、气动热、容积利用率及稳定性等性能指标.运用多目标混合遗传算法对升力体进行了多变量、多约束下的气动外形优化设计，获得了再入飞行器外形的最优Pareto解.数值模拟结果表明，典型状态下最优Pareto解与CFD结果相差12%，验证了优化结果的准确性.      

基于拼接的大视场虚拟现实头戴显示装置

虚拟现实技术是头戴显示技术的一个重要分支。为了提高虚拟现实头戴显示装置的视场角,获得更高的沉浸感,设计了一种基于视场拼接原理的大视场虚拟现实头戴显示装置。利用4套横向视场角为80°,且完全相同的目视光学系统,通过拼接实现大视场虚拟现实头戴显示。本装置的双目横向视场角为162°,其中每个单目系统的横向视场角为126°,双目重叠视场角为90°。     

Monolithic integration of an AlGaN/GaN metalinsulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor(MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias(> 70 V/μm) and suppress the leakage current(< 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50% in conduction without forward current degeneration.