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Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received. 相似文献
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In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P+ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements. 相似文献
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研究了带有止步和服务率依赖于状态的M/Ej/1/N排队系统.顾客到达系统时,以一定的概率选择进人系统或止步(不进人系统).顾客接受服务的服务率依赖于系统中的顾客数,当系统中的顾客数不超过临界值k时,服务员慢速服务;否则,服务员快速服务.利用分块矩阵的方法,推出了稳态概率向量所满足的矩阵形式的迭代公式,给出了稳态概率的表达式和计算过程.作为特例,考虑了N=4时系统稳态概率的计算.在此基础上,还求出了系统的一些性能指标,并建立了以临界值k为控制变量的费用模型.通过数值分析,求出了使费用函数最小的最优临界值k*,并进一步研究了模型参数对最优临界值和最优费用的影响. 相似文献
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简要介绍了由不同厚度的Au-Si面垒和Si(Li)半导体探测器组成的全耗尽带电粒子望远镜系统的制备及其性能,给出了载有该望远镜系统的风云三号卫星(FY-3A)在轨道高度约为830 km辐射区域监测2.9—100 MeV质子和0.15—5.7 MeV电子的结果。In this paper, the performances as well as the production procedure of the charged particle telescope systems consisting of Si(Au) surface barrier detector and Si(Li) detector with different thicknesses were introduced briefly. As an example, the density distributions of the protons and electrons in space detected by the telescope systems mounted on the Fengyun 3 satellite (FY 3A) were also presented. 相似文献
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CuInSe2 ternary films were prepared by successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and subject to heat-treatment under Ar atmosphere at various calcination temperatures, and then characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), optical absorption spectroscopy. XRD results showed that chalcopyrite structure CuInSe2 with high degree of preferred orientation towards (112) reflection could be obtained by post-heat treatment. The compositions of films calcined at 300~400 ℃ were close to the standard stoichiometry and Cl impurity decreased after calcination. The direct band gap increased from 0.94 eV to 0.98 eV with the increase of calcination temperature. 相似文献
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SILAR法制备化学计量CuInS2薄膜 总被引:1,自引:0,他引:1
在室温下,以不同cCu/cIn的CuCl2和InCl3混合溶液作为阳离子前驱体,Na2S水溶液为硫源,利用连续离子层吸附反应法(SILAR)在玻璃基底上制备了CuInS2薄膜。XRD结果表明,当cCu2+/cIn3+在1~1.5范围内均可形成具有黄铜矿结构的CuInS2薄膜。SEM观察到随cCu2+/cIn3+的升高,薄膜表面颗粒长大并出现团簇聚集。通过XPS测定薄膜表面的化学组成证明当cCu2+/cIn3+=1.25时,CuInS2薄膜接近其标准的化学计量组成。此时薄膜的吸收系数大于>104 cm-1,禁带宽度Eg为1.45 eV。 相似文献
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