含湿天然气超音速凝结研究

在气液无滑移假设下建立了天然气超音速凝结数理模型,研究了天然气中水蒸气的超音速凝结过程,并分析了Laval喷管扩张段半扩张角对凝结的影响.结果表明凝结模型是合理的,液滴成核只发生在喷管喉部后非常狭窄的区域,此后水滴的生长变得非常缓慢,直至喷管出口不再发生显著的增加;喷管半扩张角的大小对液滴的成核、生长有显著影响,成核位置随半扩张角的增加略向上游移动;喷管扩张段0.16°半扩张角在总压损失、出口马赫数、出口液滴尺寸等方面具有最佳的综合效果.     

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

The influences of polarization and p-region doping concentration on the photocurrent response of Al0.4Ga0.6N/Al0.4Ga0.6N/Al0.65Ga0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages.The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect,but increases rapidly with the increase of effective doping concentration in p-type region.These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field.A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.     

Direct Observation of High-Temperature Superconductivity in One-Unit-Cell FeSe Films

We prepared one-unit-ceil （1-UC） thick FeSe films on insulating SrTiOa substrates with non-superconducting FeTe protection layers by molecular beam epitaxy for ex situ studies. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset Tc above 40 K and an extremely large critical current density fie Jc-1.7× 106 A/cm2 at 2K, which are much higher than Tc-8K and Jc-104 A/cm^2 for bulk FeSe, respectively. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.     

Improved crystal quality of GaN film with the in-plane lattice-matched In_(0.17)Al_(0.83)N interlayer grown on sapphire substrate using pulsed metal organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an In0.17Al0.83N interlayer grown by pulsed metal–organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations(TDs) in GaN film with the InAlN interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy(TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InAlN interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InAlN interlayer. Atomic force microscopy measurement shows that the InAlN interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InAlN interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

人车路系统三维耦合振动分析及舒适度评价

基于将车身视作三维弹性梁、车轮为刚性体的全车模型,人体采用坐姿并联动力模型,路面简化成Kelvin地基上的板,通过轮胎的刚性滚子接触模型将车辆与路面耦合在一起,建立起考虑人车、车路耦合作用的用于评价车辆乘坐舒适度的三维人车路耦合系统振动模型,并推导出其运动平衡方程;通过Galerkin法对路面方程进行离散,采用New-mark积分法对耦合系统方程组进行求解,对人车路系统振动响应进行了分析;采用人体加权振动加速度均方根值对车辆乘坐舒适度进行评价,并对系统各参数对车辆乘坐舒适度的影响进行探讨.数值分析表明:传统模型下车辆乘坐舒适度指标与本文模型的指标相差最高可达到约30％;在分析车辆振动响应及乘坐舒适度时,不能忽视车辆与路面、人体与车辆相互作用,系统各参数对车辆乘坐舒适度都有一定程度的影响.     

解信赖域子问题的隐式分段折线算法

在Hessian矩阵正定的前提下,建立了一种最优曲线的微分方程模型.针对此微分方程模型,构造了一条隐式分段折线,从而提出了一种求解信赖域子问题的隐式分段折线算法,并且分析和证明了隐式分段折线路径的合理性.数值结果表明新算法是有效且可行的.     

基于结构设计的陀螺加速度计温度系数补偿方法

针对液浮陀螺加速度计内部温度变化对仪表性能影响明显的问题,通过降低仪表一次项温度系数来减小仪表误差。首先分析液浮陀螺加速度计一次项温度系数的作用机理和计算方法,提出了一种基于结构设计的温度系数补偿方法：在浮子结构上去除一定量的体积,调整浮子的质心和浮心到中心的距离,使得浮油产生的浮力随温度变化,补偿仪表摆性温度变化率和角动量温度变化率的不匹配量。其次对某型陀螺加速度计浮子结构进行补偿设计,并对补偿前与补偿后的温度系数进行实验验证,温度系数由补偿前的-1.04×10^-5/℃降低至补偿后的9.39×10^-7/℃。实验结果表明,在同等温控精度条件下,采用结构设计补偿温度系数的方法可将温度系数降低一个数量级,这对液浮陀螺加速度计的精度提升具有一定的工程应用价值。     

高质量GaN薄膜的MOCVD同质外延生长

采用金属有机化学气相沉积(MOCVD)技术,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜.X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面粗糙度小于0.5nm,其位错密度低于106 cm3.     

缪子物理实验现状及发展前景

寻找超出标准模型的新物理是当前粒子物理学最重要的任务之一。 缪子物理实验,包括带电轻子味道破坏,缪子反常磁矩和电偶极矩,缪子素到反缪子素转换等是高强度前沿新物理研究的热点领域。文章介绍了国际上在这一领域开展实验的现状和展望,特别的,介绍了未来在中国开展相关实验的前景。     

MOCVD生长InxGa1-Xn薄膜的表征

本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响.InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程.通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少.