ZnAl2O4：Tb3+荧光粉的合成、结构及其光学性能研究

通过溶胶-凝胶法制备出不同Tb³⁺掺杂浓度和不同二次煅烧温度下的ZnAl₂O₄:Tb³⁺荧光粉, 并利用X射线衍射(XRD)和荧光光谱等对样品进行了表征。由XRD结果可知,当Tb³⁺掺杂的摩尔分数不大于9%,二次煅烧温度在600℃以上时,所得粉体为结晶性良好的尖晶石相。在紫外光激发下,ZnAl₂O₄:Tb³⁺荧光粉的发射光谱由位于488 nm(⁵D₄→⁷F₆)、542 nm(⁵D₄→⁷F₅)、587 nm(⁵D₄→⁷F₄ )和621.5 nm(⁵D₄→⁷F₃)的4个发射峰组成。研究发现,Tb³⁺的掺杂浓度和二次煅烧温度对样品发光强度有着重要影响,当Tb³⁺的摩尔分数为5%,二次煅烧温度为900℃时,ZnAl₂O₄:Tb³⁺荧光粉的发光最强,继续增加Tb³⁺掺杂浓度或提高煅烧温度,分别会出现浓度猝灭和温度猝灭现象。     

激光在PERC晶硅电池中背面点接触电极制备中的应用

在经过Al2O3全钝化发射极钝化局部背接触(PERC)结构电池的背面实现良好的接触电极一直是制约着PERC高效电池向产业化推广的重要因素之一。本文采用532 nm激光烧蚀背面钝化介质层方法和传统的光刻工艺来实现背面电极的局部接触,并对两种方法进行详细的比较与分析。对激光烧蚀和激光烧结两种不同的局部接触电极制备方式进行了对比,发现激光烧蚀是更为适宜的工艺方式。相较于激光烧结,以激光烧蚀方式制备的电池的串联面接触电阻从10.7Ω.cm2降到1.24Ω.cm2,效率从4.2%提高到10.7%。     

A novel slotted helix slow-wave structure for high power Ka-band traveling-wave tubes

A novel slotted helix slow-wave structure （SWS） is proposed to develop a high power, wide-bandwidth, and high reliability millimeter-wave traveling-wave tube （TWT）. This novel structure, which has higher heat capacity than a conven- tional helix SWS, evolves from conventional helix SWS with three parallel rows of rectangular slots made in the outside of the helix tape. In this paper, the electromagnetic characteristics and the beam-wave interaction of this novel structure operating in the Ka-band are investigated. From our calculations, when the designed beam voltage and beam current are set to be 18.45 kV and 0.2 A, respectively, this novel circuit can produce over 700-W average output power in a frequency range from 27.5 GHz to 32.5 GHz, and the corresponding conversion efficiency values vary from 19% to 21.3%, and the maximum output power is 787 W at 30 GHz.     

Study of Borromean halo nuclei by the neutron wall with simulation

The model of three-body Borromean halo nuclei breakup was described by using standard phase space distributions and the Monte Carlo simulation method was established to resolve the detection problem of two neutrons produced from breakup reaction on the neutron wall detector. For ⁶He case,overall resolution σE_k for the Gaussian part of the detector response and the detection efficiency including solid angle acceptance with regard to the excitation energy E_k are obtained by the simulation of two neutrons from ⁶He breakup into the neutron wall. The effects of the algorithm on the angular and energy correlations of the fragments are briefly discussed.     

Charge state distribution analysis of Al and Pb ions from thelaser ion source at IMP

A prototype laser ion source that could demonstrate the possibility of producing intense pulsed high charge state ion beams has been established with a commercial Nd:YAG laser (E_max=3 J,1064 nm,8-10 ns) to produce laser plasma for the research of Laser Ion Source (LIS). At the laser ion source test bench,high purity (99.998%) aluminum and lead targets have been tested for laser plasma experiment. An Electrostatic Ion Analyzer (EIA) and Electron Multiply Tube (EMT) detector were used to analyze the charge state and energy distribution of the ions produced by the laser ion source. The maximum charge states of Al¹²⁺ and Pb⁷⁺ were achieved. The results will be presented and discussed in this paper.     

Study of the data analysis process of the neutron wall with simulation

We study the response function of the neutron wall for 300 MeV neutrons with GEANT4 simulations. The methods to find the correct neutron incident position and time are discussed, and the neutron emission angle and energy are reconstructed and compared with the simulation.     

基于局域场加强的近场纳米加工技术

介绍了一种全新的基于飞秒激光局域场加强效应的纳米加工技术,通过使用了微焦级别脉宽为130 fs、波长800 nm的飞秒激光照射于原子力显微镜的探针针尖,利用其局域场加强效应在金薄膜表面加工出各种纳米图形。对加工参数对加工线宽的影响中,我们发现了随着加工能量的减小和加工速度的不断增大将导致加工线宽不断减小,最终达到了极限线宽(～10 nm)。这项技术可以广泛的应用与各种材料的加工中,尤其适合各种金属薄膜的加工,特别是结合了现有的自动化控制系统更是可以加工出任意复杂的二维纳米图形。     

L-Shell X-Ray Yields and Production Cross Sections of Zr and Mo Bombarded by Slow Highly Charged Ar16+ Ions

The L-shell x-ray yields of Zr and Mo bombarded by slow Ar16＋ ions are measured. The energy of the Ar^16＋ ions ranges from about 150 keV to 350 keV. The L-shell x-ray production cross sections of Zr and Mo are extracted from these yields data. The explanation of these experimental results is in the framework of the adiabatic direct- ionization and the binding energy modified BEA approximation. We consider, in the slow asymmetric collisions such as Ar and Mo/Zr, the transient united atoms （UA） are formed during the ion-surface interaction and the direct-ionization is the main mechanism for the inner-shell vacancy production. Generally, the theoretical results are in good agreement with the experimental data.     

低电荷态离子原子碰撞过程中的转移电离机理的研究

介绍了使用位置灵敏技术和飞行时间方法研究中低能低电荷态离子-原子碰撞过程中转移电离与单电子俘获过程.对于确定的入射离子电荷态,通过理论分析及与实验数据对比给出了转移电离与单电子俘获截面比R_TS随着入射离子速度V_P的变化规律和转移电离过程中电离的电子主要来自靶原子的最外亚壳层. 关键词： 转移电离 逃离半径 电离半径 俘获半径     

Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing

We reported a chalcogenide glass-based rib waveguide fabricated using photolithography and dry etching method. A commercial software(COMSOL Multiphysics) was used to optimize the waveguide structure and the distribution of the fundamental modes in the waveguide based on the complete vector finite component. We further employed thermal annealing to optimize the surface and sidewalls of the rib waveguides. It was found that the optimal annealing temperature for Ge As Se S films is 220℃, and the roughness of the films could be significantly reduced by annealing. The zero-dispersion wavelength(ZDW) could be shifted to a short wavelength around ~2.1 μm via waveguide structural optimization, which promotes supercontinuum generation with a short wavelength pump laser source. The insertion loss of the waveguides with cross-sectional areas of 4.0 μm×3.5 μm and 6.0 μm×3.5 μm was measured using lens fiber and the cut-back method. The propagation loss of the 220℃ annealed waveguides could be as low as 1.9 d B/cm at 1550 nm.