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81.
82.
Alleviating hysteresis and improving device stability of perovskite solar cells via alternate voltage sweeps
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The anomalous hysteresis in a perovskite solar cell induced by an asymmetric field is confirmed by a capacitance–voltage measurement. By applying several cycles of alternating reverse and forward scans, this hysteresis phenomenon is obviously alleviated, resulting in a hysteresis-less state in the perovskite solar cell. Meanwhile, the open-circuit voltage and power conversion efficiency of the perovskite solar cell are enhanced by 55.74% and 61.30%, respectively, while the current density and fill factor keep almost invariable. The operation of alleviating hysteresis is essential for further research and is likely to bring in performance gains. 相似文献
83.
Two-dimensional(2D) nanomaterials possess sheet-like structures with the thickness of nanoscale, but the lateral size is infinite. In 2004, Andre Geim and co-workers at the University of Manchester successfully exfoliated a sheet of graphene from graphite by the micromechanical cleavage technique, which marked the beginning of 2D nanomaterials. Given the ultrahigh carrier mobility, excellent mechanical property, good thermal stability, superior thermal conductivities and huge specific surface area of graphene, it causes general exploration of other graphene-like 2D nanomaterials.===The 2D feature is unique to access unprecedented physical, chemical, electronic and optical properties. For example, the electron confinement in two dimensions makes them ideal candidates for the fundamental study in condensed matter physics and electronic/optoelectronic devices; the large lateral size endows them with huge surface area and high exposure of active sites. Due to their unique properties, 2D nanomaterials have promising applications in energy storage and conversion, electronic devices, catalytic reaction, sensing and biomedicine. By now, nearly 20 types of 2D nanomaterials have been studied, such as graphene, graphitic carbon nitride(g-C3N4), transition metal dichalcogenides(TMDs), transition metal carbides/nitrides(MXenes), layered double hydroxides(LDHs), transition metal oxides(TMOs), Ⅲ to Ⅵ layered semiconductor(MX4), and perovskite-type hybrids(AMX3).===In this special issue of the novel 2D nanomaterials, we selected 12 related articles in reviews, research papers and brief communications involving supercapacitor, electrochemical catalysis, sensing, battery, fluorescence, water treatment and antiflaming performance of 2D nanomaterials. We hope that readers will have a deep understanding of the current development of 2D nanomaterials, and find it beneficial to their future researches.===Toward this end, I greatly appreciate the outstanding contribution of all authors, as well as the strenuous efforts from the editorial staff members. 相似文献
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InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs). 相似文献
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We present a doping method to improve the femtosecond laser ablation rate and promote ablation selectivity. Doping transition metal ions, Co2+ or Cu2+, in silicate glass apparently change absorption spectroscopy and induce resonant absorption at wavelengths of 600 and 800 nm, respectively. Comparing with femtosecond laser processing of the same glass without doping, we find that the threshold fiuenee decreases and the ablation rate increases in resonant absorption in doped silicate glass. Resonant absorption effectively increases multiphoton ionization for seed-free electron generation, which in turn enhances avalanche ionization. 相似文献
89.
Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
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InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software.The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance,such as an increase in light output power,a reduction in current leakage and alleviation of efficiency droop.These improvements can be attributed to the p-AlGaN serving as hole injection layers,which can alleviate the band bending induced by the polarization field,thereby improving both the hole injection efficiency and the electron blocking efficiency. 相似文献
90.
本文通过铜模吸铸法和单辊甩带法分别制备出一系列楔形试样和非晶条带试样, 系统研究了稀土金属Y对Fe78Si9B13合金非晶形成能力及其软磁性能的影响. 结果表明, 少量Y取代 Fe-Si-B 非晶合金中的Fe 可大大提高该合金的非晶形成能力并促进过冷液相区的产生. 当Y含量为3 at.%时, 合金具有最大的非晶形成能力, 其临界厚度为313 μm, 相应的非晶过冷液相区宽度达到65 K. 该系列非晶合金具有优良的软磁性能, 其矫顽力(Hc)均低于200 A/m, Y含量为1 at.%时, 饱和磁感应强度(Bs) 达到最大值1.67 T. 相似文献