Simultaneous determination of trap depth and the ratio of the rate of recombination to that of capture from thermo-luminescence

Thermo-luminescence (TL) is a kind of luminescence decay measured with varying temperature. In the process of TL the decay parameter itself involves the temperature effect of traps. Thus the trap depth is inseparable from the decay parameter. There are two separate peaks in the TL curve of ZnS:Cu,Co if the measurement starts from liquid nitrogen temperature. In the experiment we started from zero Celsius temperature to isolate the deeper traps. We have proposed and realized three methods for simultaneous determination of trap depth and decay parameter based on the quasi-equilibrium model and experimental data. If we treat the case of kinetic order \alpha =1 as \alpha =2, the error might be as large as 100%.     

一种新型稀土配合物Tb(m-benzoicacid)3的发光特性的研究

研究了一种新型稀土配合物发光材料 ,对苯甲酸铽Tb(m benzoicacid) 3 的发光特性。以这种材料为掺杂剂 ,聚乙烯咔唑 (PVK)为基质材料制备了薄膜器件。通过对光谱的研究 ,发现在掺杂体系中 ,PVK与Tb(m benzoicacid) 3 之间存在有效的能量传递 ,能量传递效率与铽配合物的掺杂浓度有关 ,随着Tb配合物的掺杂浓度的增加 ,Tb的特征发光在掺杂体系中所占比重也相应增加 ,而PVK的发光相对明显减弱 ,当Tb(m benzoicacid) 3 :PVK的质量比高于 2 0 %时 ,整个体系的发光变为以Tb的发光为主 ,而PVK的发光基本猝灭了。以PVK :Tb(m benzoicacid) 3 掺杂体系为发光层 ,八羟基喹啉铝 (Alq)为电子传输层 ,制备了双层电致发光器件 ,器件的结构为ITO/PVK :Tb(m benzoicacid) 3 /Alq/LiF/Al,该器件的电致发光为三价铽离子的特征发光 ,在 2 1V的电压下 ,亮度可达 311nt。     

水溶性CuPc旋涂转速及退火方式对蓝色有机电致发光器件性能的影响

本文以Be(PP)₂为发光层、水溶性酞菁铜(WS-CuPc)为空穴注入层、NPB为空穴传输层,制备了结构为ITO/WS-CuPc/NPB/Be(PP)₂/LiF/Al的蓝色有机发光二极管(OLEDs).研究了WS-CuPc不同旋涂转速对器件性能的影响.并在WS-CuPc最佳旋涂转速的基础上,进一步研究了WS-CuPc薄膜不同退火方式对器件性能的影响.实验中,对WS-CuPc层采用了一种新的退火方式,即对ITO玻璃衬底先加热后旋涂WS-CuPc层,并与传统退火方式 关键词： 水溶性CuPc 蓝色有机电致发光 旋涂转速 退火方式     

ScF3，NaScF4，(NH4)2NaScF6的可控合成与上转换发光性能的研究

钪基氟化物化学性质稳定、声子能量低、无辐射弛豫概率较低,是一种新型高效的基质材料,并且Sc3+半径较小,能与多种氨羧络合剂形成稳定的螯合物,因而具有更加奇特的物理和化学性质,近年来,成为许多科学家研究的热点。以聚乙烯二胺(PEI)作为表面活性剂,采用水热法在反应温度为200 ℃时成功制备了ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+,(NH₄)₂NaScF₆∶Yb3+/Er3+纳米上转换发光材料。通过X射线衍射仪(XRD)、透射电镜(TEM)、扫描电镜(SEM)和荧光光谱仪对所制备样品的晶相、形貌和发光特性进行了研究,结果显示：通过改变反应物NH₄F和Ln3+的比例(NH₄F/Ln3+=1∶1,2∶1,2.5∶1,3∶1,4∶1,6∶1,10∶1,20∶1,30∶1,40∶1,50∶1)实现了对样品产物、晶相、形貌的控制。当NH₄F/Ln3+为2.5∶1时,生成了纯立方相的ScF₃;在NH₄F/Ln3+为4∶1时,生成了六角相的NaScF₄;在NH₄F/Ln3+为40∶1时,生成了一种纯立方相的新型基质材料(NH₄)₂NaScF₆,样品结晶度高,形貌均一,有正方形片状和足球状多面体;在980 nm红外激光的激发下,不同NH₄F/Ln3+比例生成的样品发光呈现桔黄→桔红→绿→黄绿等多种颜色的变化。实验表明仅改变NH₄F一种原料的用量,就可以生成ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+和(NH₄)₂NaScF₆∶Yb3+/Er3+ 三种不同的产物,说明NH₄F的用量对产物的生成有决定性的作用,对晶相的转换、颜色的调控亦有重要影响。     

CdSe/CdMnSe多量子阱的激子光学性质的研究

用分子束外延在GaAs衬底上生长了CdSe/CdMnSe多量子阱结构.利用X射线衍射(XRD)、变密度激发的PL光谱、变温度PL光谱和变密度激发的ps时间分辨光谱研究了CdSe/CdMnSe多量子阱结构和激子复合特性.讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的.在该材料中观测到激子激子散射发射峰,它被变密度激发和变温度PL光谱所证实. 关键词： CdSe/CdMnSe 量子阱 光学性质     

头部分层球模型磁感应成像正问题的解析解

建立适用于磁感应成像正问题研究的头颅四层同心球模型,分别代表大脑、脑脊髓层、颅骨层和头皮层.以矢量磁位为变量,建立球坐标系下的亥姆赫兹方程,作为磁感应成像正问题的控制方程,用分离变量法求解亥姆赫兹方程,得到模型内矢量磁位的分布,进而推导出球内涡流场的分布特性,绘制出其等位线图.分析激励电流频率和幅值对感应电压的影响.仿真结果表明该解析方法可以计算磁感应成像正问题,并可作为生成逆问题灵敏度矩阵的一种快速算法.     

Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly（3-hexylthiophene） field-effect transistors

In order to enhance the performance of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs), RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17×10^ - 2~m²/(V.s) by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150~℃ for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00×10^ - 2 ~cm²/(V.s).     

Influence of Concentration of Vanadium in Zinc Oxide on Structural and Optical Properties with Lower Concentration

ZnO films doped with different vanadium concentrations are deposited onto glass substrates by dc reactive magnetron sputtering using a zinc target doped with vanadium. The vanadium concentrations are examined by energy dispersive spectroscopy （EDS） and the charge state of vanadium in ZnO thin films is characterized by x-ray photoelectron spectroscopy. The results of x-ray diffraction （XRD） show that all the films have a wurtzite structure and grow mainly in the c-axis orientation. The grain size and residual stress in the deposited films are estimated by fitting the XRD results. The optical properties of the films are studied by measuring the transmittance. The optical constants （refractive index and extinction coefficient） and the film thickness are obtained by fitting the transmittance. All the results are discussed in relation with the doping of the vanadium.     

The effect of annealing temperature and film thickness on the phase of pentacene on the p+-Si substrate

This paper investigates the morphology and crystallization properties of the two crystalline phases of pentacene grown by thermal evaporation on p^＋-Si substrates at room temperature by the methods of atomic force microscopy and x-ray diffraction. This kind of substrate induces a thin film phase and a triclinic phase which are formed directly onto p^＋-Si substrates and constitute a layer consisting of faceted grains with a step height between terraces of 15.8A（1A=0.1 nm） and 14.9A, respectively. Above the critical thickness of the thin film phase, lamellar structures are found with an increasing fraction with the increase of the film thickness. When the film thickness is fixed, the fraction of lamellar structures increases with the increase of annealing temperature. These lamellar structures are identified as the second phase with a interplanar distance of 14.9A corresponding to the pentacene triclinic phase. Furthermore, the thin film phase consisting of several micrometre sized uniformly oriented grains at an annealing temperature of less than 80℃ and a deposition rate of 0.6A/s is observed.     

有机薄膜晶体管中接触效应的研究

研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以M_OO₃修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μ_ef达到0.42 cm²/V ·s,阈值电压V_T为-9.16 V,开关比4.7×10³.通过中间探针法,对器件电势分布做了定性判断 关键词： 有机薄膜晶体管 场效应迁移率 接触效应 电荷漂移