叶酸靶向复合脂质体中阿霉素和维拉帕米含量的测定

建立叶酸靶向复合脂质体中阿霉素和维拉帕米含量测定的反相高效液相色谱法。阿霉素在0.5—60μg/mL范围内呈良好线性关系,平均回收率97.3%;维拉帕米在1.0—50.0μg/mL范围内呈良好线性关系,平均回收率97.2%。本方法灵敏度高,专属性强,重现性好,操作简便,能准确测定叶酸靶向复合脂质体中阿霉素和维拉帕米的含量。     

Uphill anomalous transport in a deterministic system with speed-dependent friction coefficient

We investigate the transport of a deterministic Brownian particle theoretically, which moves in simple onedimensional, symmetric periodic potentials under the influence of both a time periodic and a static biasing force. The physical system employed contains a friction coefficient that is speed-dependent. Within the tailored parameter regime, the absolute negative mobility, in which a particle can travel in the direction opposite to a constant applied force, is observed.This behavior is robust and can be maximized at two regimes upon variation of the characteristic factor of friction coefficient. Further analysis reveals that this uphill motion is subdiffusion in terms of localization(diffusion coefficient with the form D(t) ~t~(-1) at long times). We also have observed the non-trivially anomalous subdiffusion which is significantly deviated from the localization; whereas most of the downhill motion evolves chaotically, with the normal diffusion.     

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

级联掺磷光纤喇曼激光器的解析优化

讨论了二级级联喇曼光纤激光器的解析解和优化设计.通过引入几何平均功率、增益因子和归一化光纤有效长度,将描述泵浦光和斯托克斯光沿喇曼增益光纤分布的微分方程组简化成代数方程组,在对泵浦光采用线性传播近似后,获得了二级级联喇曼激光器的解析解.所获得的解析解同数值模拟结果吻合得很好.利用该解析解可方便和快速地讨论级联喇曼激光器的优化设计,计算不同泵浦功率下的最佳光纤长度、输出光纤光栅反射率和转换效率.泵谱功率越大,最佳光纤长度越短,最佳输出光纤光栅反射率越小.     

First-Principles Study of Structural and Electronic Properties of Layered B2CN Crystals

Based on the hexagonal BN structure, six possible layered B~ CN structures are constructed. Their total energies, lattice constants as well as electronic properties are calculated using the ab initio pseudopotential density functional method within the local density approximation. The calculated results show that the B2 CN-V configuration with AA stacking sequence is the most stable among the six B2CN layered structures. The characteristics of electronic structures indicate that the B2 CN-V shows metallicity, which mainly comes from -B1-C-B1-C- chains.     

一般端点条件下一类样条插值的唯一可解性与凸性或单调性

一般端点条件下3次样条插值的唯一可解性见[1]—[7]。在特殊类型端点条件下一些样条插直的凸性或单调性见[8]—[11]。本文则考虑一般端点条件下一类样条插值的唯一可解性与凸性或单调性。在唯一可解性方面把[1]—[7]中一些结果推广到其他类型样条插值,在凸性或单调性方面则把[8]—[11]中结果推广到一般端点条件。这类样条插值在一般端点条件下的唯一可解性与凸性或单调性归结为下列类型的线性方程组的唯一可解性与解的非负性:     

Sm：CaS的电子俘获机制

用紫外光辐射单掺钐的ＣａＳ后，观察到很强的红外激励上转换发光。这是由不同格位的钐离子间的电荷转移引起的。本文研究了它的光学性质及有关的电子俘获机制。     

双氧铀(UO_2~(2+)硅酸盐玻璃的光谱性质

本文通过实验研究了UO_2~(2+):硅酸盐玻璃的光谱性质.报导了吸收光谱、荧光光谱、荧光寿命τ、受激发射截面σ和量子效率η等结果。也给出了辐射和无辐射跃迁几率对温度的关系以及浓度猝灭和温度猝灭曲线.结果说明玻璃是UO_2~(2+)的很好的基质.产生激光作用不是没有希望的.