如何认识恒定电场以及恒定电流的能量传输

讨论了电荷定向移动的图景及整个电路的能量传输的图景．     

纳米晶磁芯恒定磁化速率磁性能参数

设计加工了一套可用于测量环形磁芯在8～12 T/s恒定磁化速率下脉冲性能的实验平台,该实验装置主要包括脉冲形成网络、放电开关、匹配负载及被测磁芯。基于该平台对国产的铁基纳米晶磁芯的磁化曲线进行了测试,得到了铁基纳米晶磁芯在200～300 ns范围内的损耗和非饱和脉冲导磁率。实验结果表明:铁基纳米晶磁芯的相对脉冲导磁率随着磁感应增量增大及工作脉宽减小而减小,磁芯损耗则逐渐增大。     

A scanning superconducting quantum interference device microscope for room temperature samples

We have constructed a scanning low-T_c superconducting quantum interference device (SQUID) microscope, in which the SQUID is mounted on the lower end of a copper rod and cooled to liquid helium temperature. There is a 65μm thick sapphire window under the SQUID. The sample at room temperature underneath the window can be scanned to produce magnetic images. The microscope has a spatial resolution of 100－150μm and a magnetic field sensitivity of 3－60pT/$\sqrt{Hz}$ in a magnetically unshielded environment. We have used this scanning SQUID microscope to measure various room temperature samples.     

美国加州、香港和大陆高中物理课程理念比较

介绍了美国加州、香港和大陆三地高中物理课程标准的课程理念,理念的关键词的频数分析表明各地的侧重点也各有差异.     

Conceptual design of Hefei advanced light source

The conceptual of Hefei Advanced Light Source, which is an advanced VUV and Soft X-ray source, was developed at NSRL of USTC. According to the synchrotron radiation user requirements and the trends of SR source development, some accelerator-based schemes were considered and compared; furthermore storage ring with ultra low emittance was adopted as the baseline scheme of HALS. To achieve ultra low emittance, some focusing structures were studied and optimized in the lattice design. Compromising of emittance, on-momentum and off-momentum dynamic aperture and ring scale, five bend acromat (FBA) was employed. In the preliminary design of HALS, the emittance was reduced to sub nm·rad, thus the radiation up to water window has full lateral coherence. The brilliance of undulator radiation covering several eVs to keVs range is higher than that of HLS by several orders. The HALS should be one of the most advanced synchrotron radiation light sources in the world.     

同步辐射真空紫外光电离质谱研究乙烯扩散火焰

本文利用探针取样法结合同步辐射真空紫外光电离和分子束质谱技术研究了常压下的乙烯扩散火焰.通过测量光电离质谱和光电离效率谱分辨了该火焰中大部分的燃烧中间体及产物;通过改变探针取样位置以及半定量计算得到了其中部分燃烧中间体及产物的摩尔分数曲线.实验结果为探索多环芳烃和烟尘在扩散火焰中形成的最初阶段的反应机理提供了依据.     

Micro-fabrication process of vapor cells for chip-scale atomic clocks

As the key part of chip-scale atomic clocks(CSACs), the vapor cell directly determines the volume, stability,and power consumption of the CSAC. The reduction of the power consumption and CSAC volumes demands the manufacture of corresponding vapor cells. This overview presents the research development of vapor cells of the past few years and analyzes the shortages of the current preparation technology. By comparing several different vapor cell preparation methods, we successfully realized the micro-fabrication of vapor cells using anodic bonding and deep silicon etching. This cell fabrication method is simple and effective in avoiding weak bonding strengths caused by alkali metal volatilization during anodic bonding under high temperatures.Finally, the vapor cell D2 line was characterized via optical-absorption resonance. According to the results,the proposed method is suitable for CSAC.     

喷墨打印垂直有机光晶体管及其性能优化

通过旋涂透明源极并在其上采用喷墨打印的方式制备有源层及源漏电极,从而得到一种垂直结构光晶体管,并获得了较好的光电性能,其响应率为～1 500A/W,探测率可达1.6×10~(14) Jones。向有源层中掺杂一定比例的电子捕获材料PCBM,使有源层中光生空穴复合减小,光生电流增大,从而进一步提高其光探测性能。研究发现当掺杂5wt%电子捕获材料时,垂直结构光晶体管性能达到最优,响应率为～6 000A/W,探测率可达1.4×10~(15) Jones.     

LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性

利用电子自旋共振波谱（ESR）仪,分析由低压化学气相沉积（LPCVD）法制备的高纯半绝缘4H-SiC材料本征缺陷.结果发现,在暗场条件下获得的缺陷信息具有碳空位（V_C）及其络合物的特征;谱线具有半高宽较大、峰谷明显不对称的特点.分析认为造成ESR谱线半高宽较大及峰谷不对称现象的主要原因是测试温度较高.同时,吸收谱中峰谷不对称现象及较大半高宽现象的出现还与不对称的晶格结构及缺陷浓度的不均匀分布有关.在110 K测试温度下,能级上的电子分布对ESR谱特性影响很小. 关键词： 低压化学气相沉积 高纯半绝缘4H-SiC 电子自旋共振 本征缺陷     

Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究

采用原子层淀积(ALD)实现了10nm Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT). 通过对MOS-HEMT器件和传统MES-HEMT器件室温特性的对比,验证了新型MOS-HEMT器件饱和电流和泄漏电流的优势. 通过分析MOS-HEMT器件在30—180℃之间特性的变化规律,与国内报道的传统MES-HEMT器件随温度退化程度对比,得出了器件饱和电流和跨导的退化主要是由于输运特性退化造成的,证明栅介质减小了引 关键词： 原子层淀积 AlGaN/GaN MOS-HEMT器件 温度特性