高纯硅中补偿性杂质的光热电离光谱

首先测量了高纯n型硅样品在接近液氦温度区域内随温度变化的光热电离光谱，确定了硅样品的最佳光热电离温度范围. 在该温度范围内，在有本征带隙光照射条件下，测量了样品的高分辨率光热电离光谱，同时观察到了来自主要浅杂质施主磷以及补偿性杂质硼的正信号. 随后，应用外加磁场，对硼的光热电离光谱进行了研究，发现来自硼的光热电离信号，在外加磁场作用下，发生了由正向负信号的转变. 通过对该现象进行分析讨论，排除了该现象是温度效应的可能，指出普遍用来解释补偿性杂质光热电离响应的Darken模型存在不足，而少数载流子快速复合模     

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

This paper describes the successful fabrication of 4H-SiC junction barrier Schottky(JBS) rectifiers with a linearly graded field limiting ring(LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2(about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.     

基于阿贝正弦条件的光子等频图和能带结构测试系统

通过结合电磁波在周期性纳米材料中的传播特性以及阿贝完备成像理论中的阿贝正弦条件,提出了一种快速测试光子等频图和能带结构的测试技术和光学检测系统。将无限筒长显微物镜作为一种把波矢空间直接转换到实空间的变换器件,并通过配备二维面阵CCD的光栅光谱仪实现了对周期性纳米材料的等频图和能带结构的一次性拍照,真正实现了方便、快速和无损的探测技术。利用自行搭建的测试系统对用自组装方法制备的二维周期性纳米材料进行了相关光学测试,通过实验测试结果和相关理论计算的对比验证了系统的可行性和可靠性,从而说明该光学系统在研究周期性纳米材料的光学特性方面具有一定的优势。     

水平变化浅海声波导中模态特征频率与声源距离被动估计

针对水平变化浅海声波导中声源宽容性被动测距问题,理论分析了海底地形水平缓变浅海波导中卷绕变换基础上的低频声场特征频率.推导了绝对硬海底时水平变化波导中声场模态时频到达结构以及模态瞬时相位的表达式,由该表达式给出了特征频率与收发距离的变化关系,进而提出了水平变化浅海波导中声源距离被动估计的修正方法,通过仿真和实验对理论与方法进行了验证.     

基于双重傅里叶级数的混沌SPWM频谱量化分析

混沌SPWM控制因其可以有效地降低变换器的电磁干扰而得到越来越多的关注,目前对于电磁干扰效果的分析主要以仿真和实验为主,缺乏一种量化的分析方法.本文利用双重傅里叶级数的方法,首先给出了多周期及准随机SPWM的频谱量化表达式,并且针对多周期SPWM进行了频谱计算与仿真的对比验证,然后本文将此计算方法拓展应用到混沌SPWM中,并分析了混沌频谱计算的可行性.为了验证不同映射及不同载波周期波动范围对频谱的影响,文中选择了常用的Tent和Chebyshev映射分别进行了对比实验,实验结果表明,载波周期波动范围对扩频效果具有较大的影响,而且从长期看,混沌序列的分布概率密度会影响扩频的效果,从短期来看,序列的初始值选取也会对扩频效果有较大影响.本文的频谱分析方法对混沌SPWM抑制电磁干扰原理提供了一定的理论基础,而且可以为其工程实践提供设计参考.     

Adaptive synchronization of chaos in permanent magnet synchronous motors based on passivity theory

An adaptive synchronization control method is proposed for chaotic permanent magnet synchronous motors based on the property of a passive system. We prove that the controller makes the synchronization error system between the driving and the response systems not only passive but also asymptotically stable. The simulation results show that the proposed method is effective and robust against uncertainties in the systemic parameters.     

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal\ben oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel low-density metal-oxide semiconductor (LDMOS). Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer, 50-μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.     

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.     

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.     

苯乙酮氢转移反应中ZrO2/MCM-41和ZrO2/AC的催化性能对比

采用浸渍法制备了分别以活性炭(AC)和全硅MCM-41介孔分子筛负载的ZrO2催化剂,并对其进行了XRD、氮气吸附-脱附、X射线光电子能谱、差热-热重分析和吡啶吸附原位红外光谱等表征,考察了其在以异丙醇为氢源还原苯乙酮为α-苯乙醇的Meerwein-Ponndorf-Verley(MPV)反应中的催化活性,并与水合ZrO2进行对比.研究了载体对催化剂活性的影响.结果表明,ZrO2经MCM-41负载后,与载体发生强相互作用,可能形成Si—O—Zr键,ZrO2在载体表面呈高分散的无定形态,Zr—OH数目显著增加,L酸性增强,并形成B酸中心,使催化剂活性显著高于水合ZrO2;ZrO2负载在AC上后,与载体未发生强相互作用,ZrO2在载体表面未呈高分散状态,增加的Zr—OH数目相对较少,L酸性较弱,未形成B酸中心,催化活性未明显增加,但在较高焙烧温度(400～600℃)下,其仍能保持稳定的催化活性,这可归因于ZrO2/AC中AC孔道疏通及AC石墨层对苯乙酮上苯环的吸附作用,使活性位附近的反应底物浓度显著增大.