含圆孔纳米薄膜在拉伸加载下变形机理的原子级模拟研究

采用分子静力学方法结合量子修正的 Sutton-Chen多体势研究了含圆孔的纳米薄膜在单向加载过程中的力学行为,并采用共近邻分析方法研究了薄膜的微结构演化过程.模拟结果表明：孔洞的引入显著地降低了纳米薄膜的杨氏模量和屈服应力;在拉伸过程中,孔洞的形状随着应变的增加逐渐由圆形变为椭圆形,最终孔洞闭合;纳米薄膜在进入塑性变形阶段后,薄膜内部出现原子的堆跺层错,这种层错结构的出现是肖克莱不全位错在薄膜内部沿着{111}面的［112］方向运动的结果. 关键词： 纳米薄膜 力学性质 位错 分子静力学     

不同周期数的GaInAs/GaAsP多量子阱太阳能电池

为了研究不同量子阱周期数下GaInAs/GaAsP多量子阱太阳能电池性能的变化规律,利用金属有机化学气相沉积技术(MOCVD)制备了不同周期数的双结多量子阱太阳能电池样品以及无量子阱双结结构的参考样品,利用高分辨率X射线衍射仪(HXRD)和高分辨率透射电镜(TEM)测试了样品的晶体质量,同时在AM0(1×)光谱条件下测试了样品的I-V特性曲线和相应子电池的外量子效率。最终得到了高晶体质量、吸收截止波长在954 nm的Ga_(0.89)In_(0.11)As/GaAs_(0.92)P_(0.08)多量子阱结构,扩展波段的外量子效率最高达到75.18%,电池光电转换效率相对于无量子阱结构提升2.77%。通过对比测试结果发现,随着量子阱结构周期数的增加,太阳能电池在扩展波段(890~954 nm)的外量子效率不断提高,常规波段的短波响应(300~700 nm)会出现下降,长波响应(700~890 nm)会出现上升,短路电流和转换效率相应提升并趋于饱和。     

光谱法研究人发,指出中锰,镍含量 变化曲线的特征

在近１０年内按季度收集了同一个人的头发样品３３份和指甲样品,４１份,应用火焰原子吸收光谱法测定了人发和指甲中的锰和镍含量,并分别绘制锰和镍随时间（年）变化曲线,获得锰含量波动范围;人发中０．２１００－１．５００μｇ／ｇ、指甲中０．８３００－２．３９１μｇ／ｇ;镍含量波动范围;人发中０．４９００－１．７５０μｇ／ｇ、指甲中１．１７９－４．１８４μｇ／ｇ。含量变化曲线均具有非线性特征。     

Enrichment and separation of rebaudioside A from stevia glycosides by a novel adsorbent with pyridyl group

The adsorptive capacity and selectivity of a novel adsorbent with pyridyl group toward stevia glycosides were studied. The effect of polarity and physical structure of the sorbent on the selectivity was investigated in detail. Two separation methods were applied in the enrichment of rebaudioside A(RA). They were selective elution using methanol or ethanol solution as solvent, and dynamic chromatographic separation using pyridyl resin with high selectivity. Results show that the chromatographic separation method can effectively enrich RA from stevia glycoside with high content of stevioside.     

初高中衔接背景下的一元二次不等式教学研究

一元二次不等式的解法教学是初高中数学衔接课程中的重要组成部分.笔者以初中阶段课程教学中的一元二次不等式及其解题技能为研究对象,探究一元二次不等式的衔接教学方法,以便在充分考虑学生数学基础的情况下,兼及数学教育教学理论与既往教学经验,更好地将不等式的解题思路与相关数学思想传授给学生,为学生高中不等式的学习打牢基础、做好衔接.     

应变调控单层氧化锌能带结构的第一性原理研究

采用基于密度泛函理论的第一性原理计算对单层ZnO薄膜能带结构的应变调控进行了研究.计算结果表明:沿着之字形方向的压缩应变和扶椅形方向的拉伸应变对薄膜带隙的调控都是线性的,而且带隙调控的范围最大;相反地,在沿着之字形方向的拉伸应变和扶椅形方向的压缩应变的调控下,带隙则呈现出非线性的变化.对于双轴应变的拉伸与压缩,带隙的变化都是非线性的.这种通过不同的应变加载方式来实现对带隙不同程度的调控,对ZnO薄膜在光学和催化等领域的应用具有重要的指导意义.     

High sensitivity Hall devices with AlSb/InAs quantum well structures

AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.     

Photoelectric Property Improvement of 1.0-eV GaInNAs and Applications in Lattice-Matched Five-Junction Solar Cells

GaInNAs with bandgap 1.0 eV is a promising material for multi-junction solar cell applications. However, the poor quality of GaInNAs grown by metalorganic chemical vapor deposition hinders its device performance. Here to reap the benefits of 1.0-eV sub-cell, we focus on the optimization of annealing temperature and growth ambient of GaInNAs. The GaInNAs sub-cell exhibits a concentration reduction of shallow level defects when it is annealed at 700℃ for 20 min. As compared with the growth case using a hydrogen ambient, the N incorporation efficiency of GaInNAs can be enhanced during the growth in an N_2 ambient. Furthermore, background carbon concentration is observed to reduce in the as-grown GaInNAs epilayer. A GaInNAs sub-cell with 82% peak external quantum efficiency is obtained in a dual-junction GaInNAs/Ge solar cell. Finally, a monolithic Al Ga In P/Al Ga In As/Ga In As/GaInNAs/Ge five-junction solar cell is grown for space application. The fabricated device shows a conversion efficiency of 31.09% and a short-circuit current density of 11.81 m A/cm~2 under 1 sun AM 0 illumination.     

锂离子对稀土掺杂氧化物的红外激光诱导热辐射的影响

由于具有较高的可见波段荧光效率,基于稀土掺杂氧化物的红外激光诱导热辐射具有重大的应用潜力。进一步提高红外诱导热辐射效率具有重大的实用价值。设计了一种改善稀土掺杂氧化物材料中红外诱导热辐射效率的方案,即通过掺杂改性杂质,既可以改变稀土离子周围局域晶场的对称性;同时又引入了晶格缺陷。对应的效果包括：一方面,可以通过增强稀土离子周围的晶场强度来提高稀土元素对于入射光子的吸收能力;另一方面,可以利用晶格缺陷作为猝灭中心来增加材料的热转化能力,最终将显著提高杂质改性材料的光热转化效率,即获得更加高效的红外诱导热辐射材料。为了验证设计方案的可行性,利用溶胶-凝胶方法合成了不同浓度的镱离子和锂离子的共掺杂样品,通过XRD及TEM测试分析了杂质对样品结构的影响,并且基于荧光发射光谱具体研究了杂质掺杂浓度对热辐射效率的影响。该工作为高效稀土掺杂热辐射材料的制备提供一定的参考。