JB9014钝感炸药冲击绝热线测量

 利用压力对比法,采用锰铜计测量待测炸药样品和LY12铝标准样品在LY12铝飞片同时撞击下的界面压力,运用冲击波关系式和正交回归直线拟合分析,确定了JB9014钝感炸药冲击绝热线关系式。     

Z2000火焰原子发射光谱法测定卤水中钾、钠和锂的干扰

通过实验针对Z2000火焰原子发射光谱法测定卤水中的钾、钠和锂的过程中出现的干扰做一些初步的探讨,以便指导我们今后的测试.     

簇合物(I2InN3)n(n=1～4)的结构和稳定性的理论研究

为寻求单一源前驱体,采用密度泛函理论DFT-B3LYP方法系统研究新的第ⅢA主族叠氮簇合物的结构与性质关系.结果表明,簇合物(I2InN3)n(n=2～4)的优化构型均为由不同子体系的叠氮基α-N和In原子相连形成的环状结构,叠氮基以直线型存在.研究了几何参数随聚合度的变化趋势,并对计算获得的IR谱进行归属.能量和聚合焓均揭示簇合物的稳定性次序为3A＞3B和4B＞4C＞4A＞4D.簇合物(I2InN3)n(n=1～4)的热力学函数随温度升高和聚合度n增大而增加.热力学分析表明聚合反应在温度高达500 K均可自发进行.     

深紫外光谱研究

高频无极汞灯采用电磁感应耦合激励汞泡发光的方法,具有稳定性好、寿命长、发光强度大等优点,广泛应用于原子吸收光谱分析,紫外消毒以及环境污染监测等领域。高频无极汞灯辐射最强的紫外谱线为253.7nm,采用汞灯照射样品,检测样品对该谱线的吸收谱,可检测样品中汞的含量以及环境中汞污染程度。我们研究了高频无极汞灯辐射253.7nm谱线幅度随着汞泡冷端温度的变化,得出了该谱线辐射最强时的温度,作为汞灯的最佳工作温度。     

Preparation and Structure of a New Coagulation Factor XI Catalytic Domain for Drug Discovery

Human blood coagulation factor XI (FXI) is a key enzyme in the amplification phase of blood coagulation cascade,and is recognized as an important target for anti-coagulant deve-lopment in recent years.We designed a new mutant form of FXIa catalytic domain rhFXI 370～607 (N73Q-N113Q-C123S),and report here the facile preparation,protein crystallization,and crystal structure of this protein.We highlight a few unique structural features of FXIa after comparison with the trypsin family serine proteases at sequence and structural levels.This work provides a foundation to develop new small molecular FXIa inhibitors with increased potency and specificity.     

基于准分形结构的具有二次谐波抑制作用的小型化高温超导滤波器的研究(英文)

为了抑制平面带通滤波器的二次谐波,实现高温超导滤波器的小型化,本文提出了两种新型的准分形结构谐振器,并分别将其应用到微带滤波器的设计与仿真之中.第一种谐振器由希尔伯特分形结构改变而来,由于其相对紧凑度更高,并且保留希尔伯特分形结构的基本性质,因此仿真结果不仅具有更好的二次谐波抑制效果还有更小的体积优势.第二种谐振器由Minkowski分形结构改变而来,基于此谐振器设计了一款八阶带通滤波器,仿真及测试结果表明:基于此谐振器所设计滤波器与传统的微带滤波器相比,二次谐波被推迟了1.5GHz左右,并且体积减小约三分之一.结果证明两种滤波器均具有良好的二次谐波抑制效果和小型化的优势.     

带势估计的概率假设密度滤波的物理空间意义

为了便于人们深入理解带势估计的概率假设密度滤波,本文在Ozgur Erdin对随机集做的物理空间假设的基础上,采用Bayes公式和全概率公式对带势估计的概率假设密度滤波的迭代过程进行了推导.推导过程详细明了,推导结果与文献一致.这为带势估计的概率假设密度滤波在目标跟踪中的应用及性能改进提供了理论基础.     

椭偏法测量云母波片相位延迟量及双折射率

为了得到云母波片的相位延迟量和双折射率随波长的变化关系,利用椭偏光谱仪连续测量了云母波片在400~770 nm光谱范围内的延迟量.在对云母波片进行校准后,测量的数据被光电探测器收集并输送到计算机,根据输出的数据可以得到云母波片的相位延迟量随波长的变化.利用测得的延迟量计算出了云母波片在一定光谱范围内的双折射率,得到了云母波片的双折射率色散曲线,并通过拟合得到了双折射率色散公式.该方法能测量任意波片的相位延迟量,并且具有测量方便、周期短、精度高等特点.     

Formation of epitaxial Tl_2Ba_2Ca_2Cu_3O_(10) superconducting films by dc-magnetron sputtering and triple post-annealing method

For obtaining pure phase T12Ba2Ca2Cu3O10 （T1-2223） films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, T12Ba2CaCu2O8 （T1-2212） is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared T1-2212 inter-phase is converted into T1-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of T1-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction （XRD） θ-2θ scans, 09 scans and rotational φ scans show that each of the T1-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy （SEM）. The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.     

Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multinle auantum wells at room temnerature

Tensile-strained Ge/SiGe multiple quantum wells （MQWs） were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n＋-Si （001） substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed,