1-丁烯在MCM-22分子筛中的吸附与扩散：Monte Carlo与动力学模拟研究

采用巨正则Monte Carlo方法和分子动力学方法研究了1-丁烯在MCM-22分子筛中的吸附现象和扩散行为,得到了1-丁烯吸附在该分子筛孔道中的相互作用能和在不同孔道中的扩散轨迹和扩散系数.结果表明1-丁烯在MCM-22分子筛中主要存存两个相互作用能区间,1-丁烯优先吸附在十元环孔道中;1-丁烯的扩散和移动主要发生在十二元环超笼的中部,十元环孔道中的1-丁烯扩散速度明显小于十二元环超笼系统中的扩散速度.     

LaMgAl11O19-Al2O3复相陶瓷的制备及其力学性能的研究

以板片状结构的LaMgAl11O19作为第二相来对Al2O3陶瓷进行增韧补强,采用无压烧结工艺在1650℃下保温4 h制备了LaMgAl11O19-Al2O3复相陶瓷,研究了LaMgAl11O19的添加量对LaMgAl11O19-Al2O3复相陶瓷的物相组成、体积密度和力学性能的影响,并结合复相陶瓷试样断面的SEM照片分析了其强韧化机理。研究表明,添加一定量的LaMgAl11O19后,LaMgAl11O19-Al2O3复相陶瓷材料的抗弯强度和断裂韧性均有明显提高,当添加LaMgAl11O19的质量分数为10%时,LaMgAl11O19-Al2O3复相陶瓷的抗弯强度和断裂韧性分别为321 MPa和5.03 MPa.m1/2,其中片状晶的拔出效应、裂纹偏转作用以及裂纹分支等增韧机制发挥了主导作用。     

LaMAl_(11)O_(19)(M=Mn、Co、Ni、Zn)陶瓷材料的制备及力学性能研究

以Al(OH)3,La2O3,MnO,CoO,NiO,ZnO为原料,采用高温固相合成法,在1100~1650℃下保温5 h,合成LaMAl11O19(M=Mn、Co、Ni、Zn)粉体。通过对合成产物的物相进行分析,确定单相LaMAl11O19粉体的最低合成温度为1600℃。研究表明,合成的LaMAl11O19具有板片状结构,晶粒大小因取代的过渡金属不同而有所差异,晶粒直径约为2~6μm,厚度0.3~2μm。在1650℃无压烧结5 h后制备得到LaMAl11O19陶瓷材料,仍具有稳定的磁铅石形结构,其体积密度和抗折强度随过渡金属元素原子质量的增大(MnCoNiZn)呈现递增趋势。其中,过渡金属Zn取代Mg制得的LaZnAl11O19陶瓷材料具有较高的抗折强度和断裂韧性,分别为163.3 MPa和3.2 MPa·m1/2。     

La7O6(BO3)(PO4)2:Eu3+/Tb3+荧光材料的制备及其光致发光性能

采用优化的高温固相方法制备了稀土离子Eu³⁺和Tb³⁺掺杂的La₇O₆（BO₃）（PO₄）₂系荧光材料,并对其物相行为、晶体结构、光致发光性能和热稳定性进行了详细研究。结果表明,La₇O₆（BO₃）（PO₄）₂：Eu³⁺材料在紫外光激发下能够发射出红光,发射光谱中最强发射峰位于616 nm处,为⁵D₀→⁷F₂特征能级跃迁,Eu³⁺的最优掺杂浓度为0.08,对应的CIE坐标为（0.610 2,0.382 3）;La₇O₆（BO₃）（PO₄）₂：Tb³⁺材料在紫外光激发下能够发射出绿光,发射光谱中最强发射峰位于544 nm处,对应Tb³⁺的⁵D₄→⁷F₅能级跃迁,Tb³⁺离子的最优掺杂浓度为0.15,对应的CIE坐标为（0.317 7,0.535 2）。此外,对2种材料的变温光谱分析发现Eu³⁺和Tb³⁺掺杂的La₇O₆（BO₃）（PO₄）₂荧光材料均具有良好的热稳定性。     

Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits.However,existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques,which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up.Here in this work,we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier.For the first time,we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions.Uniform electroluminescence is observed over the entire active region,with the emission spectrum shaped by metallic grating plasmons.The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier.The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.