四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

Optimization of High-Order Harmonic by Genetic Algorithm for the Chirp and Phase of Few-Cycle Pulses

The brightness of a particular harmonic order is optimized for the chirp and initial phase of the laser pulse by genetic algorithm. The influences of the chirp and initial phase of the excitation pulse on the harmonic spectra are discussed in terms of the semi-classical model including the propagation effects. The results indicate that the harmonic intensity and cutoff have strong dependence on the chirp of the laser pulse, but slightly on its initial phase. The high-order harmonics can be enhanced by the optimal laser pulse and its cutoff can be tuned by optimization of the chirp and initial phase of the laser pulse.     

聚乙炔的CH面外振动红外光谱研究

采用从头计算方法，计算了反式和顺式聚乙炔的氢原子在垂直于聚乙炔分子面方向振动的红外光谱，计算表明，Gibson等用红外吸收实验所测得的谱线的确是聚乙炔的CH面外振动产生的谱线，经100℃长时间加热后，顺式聚乙炔变为反式聚炔，但波数为740cm^-1的谱级仍保留5％的强度。     

氢谱在甾醇类化合物定量和纯度分析中的应用

用^1HNMR谱可定量确定繁茂膜海绵(Hymeniacidon perleve)中分离得到的结构类似的甾醇类化合物的含量，这种方法是对鉴定分析组成复杂而性质很相近的天然甾醇化合物的新思路。     

三波长-分光光度法测定黑沙蒿中的总黄酮

以野樱素为对照品、 AlCl3作显色剂,建立了三波长-分光光度法测定黑沙蒿中主要化学成分黄酮类化合物的方法.该方法可校正混浊背景倾斜度的影响,并能消除重叠吸收曲线的干扰.方法的线性范围为1.12～13.44 μg/mL,相关系数r=0.9999,适用于植物中总黄酮的测定.     

氯参与的化学气相淀积金刚石的热力学分析

用非平衡热力学耦合模型研究了金刚石在CHCl体系中的生长,计算所得CHCl体系的金刚石生长的相图与大量实验结果符合良好.通过热力学分析讨论了氯的添加对提高金刚石薄膜生长速率及其质量的影响以及降低淀积温度的作用.     

钙和钒离子对钒-溴过氧化物酶催化 H2O2 氧化环己烯反应的影响

 在溴化钾存在下, 大型海洋藻类珊瑚藻的钒-溴过氧化物酶 (V-BPO) 可在常温下催化 H₂O₂ 环氧化环己烯生成环氧环己烷. 通过用含 1.0 mmol/L 钒离子和 1.0 mmol/L 钙离子的缓冲溶液透析 V-BPO, 用恒流泵向反应体系中连续添加 H₂O₂, 并优化其它反应条件, 可提高该催化反应时空收率. 在优化的反应条件下, 产物环氧环己烷的时空收率为 4.79 g/(h•L), 对 H₂O₂ 的收率为 74%, 均比文献最高值提高了 78%.     

β-环糊精修饰的荧光金纳米簇的合成及其在细胞成像上的应用

通过一锅法水相合成出一种β-环糊精修饰的荧光金簇。该新型金簇具有红色荧光发射、长时间的分散稳定性和荧光稳定性。透射电镜观察其平均粒径为(1.40±0.32)nm。激光共聚焦显示金簇分散在细胞质中,荧光随金簇浓度增加而增强。细胞毒性实验证实该金簇具有良好的生物相容性。表面修饰的β-环糊精,也为金簇载药或者靶向功能化提供了更多可能性,从而进一步拓宽其在生物医学方面的应用。     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

Effect of N2 Plasma Annealing of Properties of Fluoring Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra—Large—Scale Integrated Circuits

The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated.The stability of the Dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing.After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50℃,the dielectric constant variation of the annealed SiOF films is only 1.5%,while the variation for those SiOF films without annealing is 15.5%.Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films.These Unstable Si-F2 bonds are suitable to react with water,resulting in the degradation of SiOF film properties.Therefore,the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.