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Quantum interference effects on the probe amplification without and with inversion in a four-level system 下载免费PDF全文
A four-level system driven by two coherent fields is considered. It is shown that in the presence of an incoherent pump, the probe gain at a short wavelength can be achieved due to the quantum interference. Our density matrix calculation provides the conditions for probe amplification from different origins, including gain without population inversion on any state basis, gain with population inversion on the dressed-state basis, and gain with population inversion on the bare-state basis. Also, by controlling the Rabi frequency of the coupling field a total change from non-inversion to inversion can be achieved which does not depend on the intensity of the incoherent pump. 相似文献
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A superconducting squeezed type half-wave resonator (HWR) of β=0.09 has been developed at the Institute of Modern Physics, Lanzhou. In this paper, a basic design is presented for the stiffening structure for the detuning effect caused by helium pressure and Lorentz force. The mechanical modal analysis has been investigated the with finite element method (FEM). Based on these considerations, a new stiffening structure is proposed for the HWR cavity. The computation results concerning the frequency shift show that the low beta HWR cavity with new stiffening structure has low frequency sensitivity coefficient df/dp and Lorentz force detuning coefficient KL, and stable mechanical properties. 相似文献
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A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure 下载免费PDF全文
A quantum efficiency analytical model for complementary metal–oxide–semiconductor(CMOS) image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels. 相似文献
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Effect of concentration of Er3+ ions on ultra-large index of refraction via atomic coherence in Er3+: YAG crystal 下载免费PDF全文
A four-level system is proposed to produce large index of refraction accompanied by vanishing absorption in the Er^{3+}-doped yttrium aluminium garnet (YAG) crystal. It is found that the high index of refraction with zero absorption can be provided by adjusting the incoherent pumping, the coherent field, as well as the concentration of Er^{3+} ions in the crystal. Furthermore, the value of the incoherent pump to achieve the high index of refraction with zero absorption is greatly changed with increasing the concentration of Er^{3+} ions in the crystal. This indicates that the effect of concentration on the high index of refraction with zero absorption cannot be neglected. 相似文献