自治差分方程的稳定性

本文首先给出了文献[2]中关于一次近似系统不稳定性定理的一个反例,然后给出了关于自治差分方程利用其一次近似系统的不稳定性来判别原系统不稳定性的判别定理。     

Intensity tuning characteristics of double-mode He--Ne laser with optical feedback

This paper investigates the intensity tuning characteristics of a double longitudinal modes He--Ne laser subjected to optical feedback. The intensity undulations of the total light and the two modes are observed for different external cavity length. Two modulations of the internal cavity length are performed. One is only for the internal cavity length being modulated and the other is for both the internal and the external cavity length being modulated. The undulation frequency of the total light is found to be determined by the ratio of external cavity length to internal cavity length in both modulations. When the external cavity length is integral times of the internal cavity length, the fringe frequency of the total light could be seven or even more times of that in conventional optical feedback. A simple theoretical analysis is presented, which is in good agreement with the experimental results. The potential use of the experimental results is also discussed.     

External-cavity birefringence feedback effects of microchip Nd:YAG laser and its application in angle measurement

External-cavity birefringence feedback effects of the microchip Nd:YAG laser are presented. When a birefringence element is placed in the external feedback cavity of the laser, two orthogonally polarized laser beams with a phase difference are output. The phase difference is twice as large as the phase retardation in the external cavity along the two orthogonal directions. The variable extra-cavity birefringence, caused by rotation of the external-cavity birefringence element, results in tunable phase difference between the two orthogonally polarized beams. This means that the roll angle information has been translated to phase difference of two output laser beams. A theoretical analysis based on the Fabry--Perot cavity equivalent model and refractive index ellipsoid is presented, which is in good agreement with the experimental results. This phenomenon has potential applications for roll angle measurement.     

时滞微分方程依照两种测度的稳定性

运用变异Liapunov方法,讨论了时滞微分方程依照两种测度的稳定性。借助于中间测度h*(t,x),在未扰动系统为常微分方程的情形下,得到了关于时滞微分方程非一致和一致稳定性的判定定理。     

Enhanced pulse compression induced by the interaction between the third—order dispersion and the cross—phase modulation in birefringent fibres

In this paper,we report on the enhanced pulse compression due to the interaction between the positive third-order dispersion (TOD) and the nonlinear effect (cross-phase modulation effect) in birefringent fibres.Polarization soliton compression along the slow axis can be enhanced in a birefringent fibre with positive third-order dispersion,while the polarization soliton compression along the fast axis can be enhanced in the fibre with negative third-order dispersion.Moreover,there is an optimal third-order dispersion parameter for obtaining the optimal pulse compression.Redshifted initial chirp is helpful to the pulse compression,while blueshifted chirp is detrimental to the pulse compression.There is also an optimal chirp parameter to reach maximum pulse compression.The optimal pulse compression for TOD parameters under different N-order solitons is also found.     

GaN基紫外探测器的研究与制备

报道了用MOCVD方法在GaAs衬底上制作p-GaN/InGaN/n-GaN结构紫外探测器.我们对器件进行了测试分析.根据器件光伏信号强度和相位的测量结果,我们得到了该器件的能带结构图.我们还发现Ni/Au电极与p-GaN之间的接触表现出肖特基接触的特性.该探测器在入射光波长为375nm处的响应度大约为7.4×10-3A/W.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.     

高能核-核碰撞中直接光子各向异性的数值模拟研(英文)

通过计算给出了在LHC能区非对心核 核碰撞中由椭圆流ν₂ 表示的高横动量直接光子的方位角不对称性。该高横动量光子是由喷注与热密介质相互作用而辐射出来的。光子椭圆流与强子椭圆流ν₂ 相差π/2的相位, 是直接光子椭圆流中负值的来源。同时, 计算表明LHC能区直接光子ν₂随粒子横动量p_T的变化趋势与RHIC上的实验结果一致, 但LHC能区较RHIC能区有更低的直接光子流ν₂ 值, 且ν₂ 值由负到正对应的转换p_T值更高。这表明在LHC能区喷注淬火效应更为明显, 表面发射的直接光子对光子椭圆流的贡献份额增强。The azimuthal anisotropy of high p_T direct photons is investigated by using the coefficient of elliptic flow ν₂ in non-central nucleus-nucleus collision at LHC energies. These photons come from radiation induced by the interaction between jet and hot/dense medium. The azimuthal anisotropy of high p_T direct photons is investigated by using the coefficient of elliptic flow ν₂ in non-central nucleus-nucleus collision at LHC energies. These photons come There is π/2 difference between direct photons and hadrons for the azimuthal elliptic flow ν₂. Such photons are the main source of the negative part of ν₂ for direct photons. The dependence of the direct photon ν₂ on the transverse momentum p_T at LHC energy is found to be consistent with the experimental results at RHIC energy. Furthermore, we find that the value of the direct photon ν₂ at LHC energy is smaller than that at RHIC energy. The value of the transverse momentum at which the direct photon ν₂ changes from negative value to positive at LHC is higher than that at RHIC. It’sfound the enhanced jet quenching effect and enhanced contribution for the elliptic flow ν₂ of the direct photons emitted from surface at LHC energy.     

四阶椭圆问题有限元导数恢复技术与超收敛性

1引言有限元导数恢复技术是近年来发展起来的计算有限元导数并获得导数逼近超收敛性的一种新的后处理技术.对于一维和二维区域上的二阶椭圆边值问题,文[1,2]提出了Z-Z小片插值技术,得到了有限元导数逼近在小片恢复区域上的一阶超收敛结果和剖分节点处二阶强超收敛性;文[3,4]则建立了更为实用的小片插值恢复技术并得到与文[1,2]相平行的超收敛结果;文[5]对两点边值问题构造了一种积分形式的导数恢复公式,利用这个公式可获得剖分节点处有限元导数逼近的O(h~(2k))阶超收敛估计.本文将对一维四阶椭圆