Effect of FeS doping on large diamond synthesis in FeNi-C system

The large single-crystal diamond with FeS doping along the(111) face is synthesized from the FeNi–C system by the temperature gradient method(TGM) under high-pressure and high-temperature(HPHT). The effects of different FeS additive content on the shape, color, and quality of diamond are investigated. It is found that the(111) face of diamond is dominated and the(100) face of diamond disappears gradually with the increase of the FeS content. At the same time, the color of the diamond crystal changes from light yellow to gray-green and even gray-yellow. The stripes and pits corrosion on the diamond surface are observed to turn worse. The effects of FeS doping on the shape and surface morphology of diamond crystal are explained by the number of hang bonds in different surfaces of diamond. It can be shown from the test results of the Fourier transform infrared(FTIR) spectrum that there exists an S element in the obtained diamond. The N element content values in different additive amounts of diamond are calculated. The XPS spectrum results demonstrate that our obtained diamond contains S elements that exist in S–C and S–C–O forms in a diamond lattice. This work contributes to the further understanding and research of FeS-doped large single-crystal diamond characterization.     

Theoretical derivation of the crystallographic parameters of polytypes of long-period stacking ordered structures with the period of 13 and 14 in hexagonal close-packed system

Based on crystallographic theory, there are 63 kinds of polytypes of 13H long-period stacking order(LPSO) structure,126 kinds of polytypes of 14H LPSO structure, 120 kinds of polytypes of 39R LPSO structure, and 223 kinds of polytypes of 42R LPSO structure in a hexagonal close-packed(HCP) system, and their stacking sequences and space groups have been derived in detail. The result provides a theoretical explanation for the various polytypes of the LPSO structure.     

Synthesis of N-type semiconductor diamonds with sulfur,boron co-doping in FeNiMnCo-C system at high pressure and high temperature

A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth(TGG) under high pressure and high temperature(HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra(XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 ?·cm and 760.870 cm~2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10~5 ?·cm and 76.300 cm~2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.     

近期热点文章

正Designing Air-Stable O3-Type Cathode Materials by Combined Structure Modulation for Na-Ion Batteries H.-R.Yao,P.-F.Wang,Y.Gong,J.Zhang,X.Yu,L.Gu,C.Ou Yang,Y.-X.Yin,E.Hu,X.-Q.Yang,E.Stavitski,Y.-G.Guo,L.-J.Wan J.Am.Chem.Soc.DOI:10.1021/jacs.7b05176通过减小储钠层的层间距并同时提高过渡金属离     

近期热点文章

<正>Coulometry and Calorimetry of Electric Double Layer Formation in Porous Electrodes M.Janssen,E.Griffioen,P.M.Biesheuvel,R.van Roij,B.ErnéPhys.Rev.Lett.119(2017)166002.电量测定与量热相结合,发现电势固定的多孔碳电极/Na Cl溶液双电层的电量随温度上升而下降.首次测出双电层形成中熵变对巨热力学势的贡献约25%,不同于点电荷模型预测的100%.     

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy(XPS) spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×10~5 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.     

测定自来水中双氯芬酸的两种免疫分析方法对比研究北大核心CSCD

将双氯芬酸（Diclofenac,DCF）与牛血清白蛋白（BsA）通过活化酯法偶联制备人工免疫原,并免疫新西兰大白兔制得抗双氯芬酸的多克隆抗体。使用该抗体建立了测定环境水样中的双氯芬酸的间接竞争酶联免疫吸附分析（ic—ELISA）法;用生物素一亲和素（Biotin-Avidin,BA）标记抗体,建立测定双氯芬酸的BA—ELISA方法。ic-ELISA、BA-ELISA两种方法的线性范围分别为10～10。ng／L和1～10。ng／L;检测限分别为27．0ng／L与2．6ng／L;用于环境水样中双氯芬酸的测定,回收率分别为96．3％～106．7％与93．5％～118．4％。     

Observation and analysis of halo current in EAST

Plasma in a typically elongated cross-section tokamak （for example, EAST） is inherently unstable against vertical displacement. When plasma loses the vertical position control, it moves downward or upward, leading to disruption, and a large halo current is generated helically in EAST typically in the scrape-off layer. When flowing into the vacuum vessel through in-vessel components, the halo current will give rise to a large J × B force acting on the vessel and the in-vessel components. In EAST VDE experiment, part of the eddy current is measured in halo sensors, due to the large loop voltage. Primary experimental data demonstrate that the halo current first lands on the outer plate and then flows clockwise, and the analysis of the information indicates that the maximum halo current estimated in EAST is about 0.4 times the plasma current and the maximum value of TPF × Ih/Ip0 is 0.65, furthermore Ih/Ipo and TPF × Ih/Ipo tend to increase with the increase of Ip0. The test of the strong gas injection system shows good success in increasing the radiated power, which may be effective in reducing the halo current.     

含硼MFI型分子筛膜制备与渗透汽化性能研究

采用二次生长法在廉价的多孔莫来石管状支撑体上合成了含硼MFI(B-MFI)分子筛膜。通过XRD、FTIR、ICP-AES、11BMAS NMR和SEM对形成膜和粉末进行表征,并考察了溶胶nB/nSiO2比、料液温度和浓度对分子筛膜渗透汽化性能的影响。表征结果证实BO4存在于MFI晶体骨架中。溶胶nB/nSiO2比对膜层微结构和渗透汽化性能有较大影响。B-MFI型分子筛膜选择性地从水溶液中透过有机物,在60℃、质量分数5%丙酮/水和乙醇/水体系的分离因子分别为260和70,均高于同等条件下制备的silicalite-1分子筛膜。     

O+DC1→OD+Cl反应在~3 A″势能面上的动力学研究(英文)

在~3A″势能面上,在散射能为14～20 kcal/mol的范围内,运用准经典轨线方法对O+DCl→OD+Cl进行了动力学研究.我们发现积分散射截面随着散射能的增加而增大,产物OD的振动分布发生了很强的粒子数的反转现象,且振动激发较弱、转动激发较强.后向散射居于主导地位,碰撞能的变化对产物转动取向的影响不大.