Ge BEAM TREATMENT OF Si SUBSTRATE FOR MOLECULAR BEAM EPITAXY

A new surface cleaning method for Si MBE is described in which a very weak Ge beam flux is deposited on the surface for removing the thin passivative layer of SiO₂ on the Si subetrate. It has proved that the SiO₂ will react with Ge at a relatively low temperature (620℃), and as a result, the oxide layer becomes volatile. Here the high temperature annealing in the conventional Shiraki method is no longer required, and since the oxide layer is removed in ultra high vacuum, only very little carbon contamination may occur. Furthermore, to reduce the excessive Ge on the substrate surface, Ge is deposited at 620℃ and then the sample is annealed at 700℃; the residual Ge atoms on Si substrate can be reduced to less than 0.1 monolay-er (ML). Ge beam treatment turns out to be an effective low-temperature Si surface-cleaning method, especially for the heteroepitaxial growth of Ge_xSi_1-x/Si.     

突扩燃烧室中气-固两相湍流相互作用与颗粒弥散的数值模拟

一、前言 突扩流动中流体和颗粒的湍流相互作用对流动、燃料与空气的混合和燃烧效率影响很大。文献[2]的测量表明:在大突扩比,即小的R_1/R_2(R_1为进口半径,R_2为燃烧室半径)下,在近壁回流区中,颗粒湍流度大于气相,在正流区中小于气相;在其它两种突扩比,即较小突扩比下,在回流区中颗粒相的湍动能小于气相。这些测量结果不能用轨道模型或基     

赤霉酸甲酯及其类似物的2D NMR研究

应用¹H-¹H COSY,NOESY,¹³C-¹H COSY等2DNMR和DEPT技术,完成了赤霉酸甲酯(2),13-O-乙酰基赤霉素甲酯(3)及其3位差向异构体(4)的¹H和¹³CNMR化学位移的全指定,并探讨了它们的相对构型,相关质子间的偶合常数也支持所得结果。     

小型内窥镜干涉型光纤陀螺仪装配质量控制系统（英文）北大核心CSCD

提出一种用于干涉型光纤陀螺仪(IFOG)装配质量控制的内窥镜系统设计及相关图像分析方法。同时采用1.0mm与2.4mm工业内窥镜系统采集IFOG内部图像与视频数据;并利用多自由度运动控制平台调节内窥镜工作姿态以保证图像的顺利采集。在此基础上,设计了基于db4小波基的图像增强方法,基于灰度共生矩阵的图像纹理特征估计方法以及图像几何形状特征的计算方法等,用以进行内窥镜图像的分析。通过上述系统与方法的应用,能够有效检测出IFOG产品在装配过程中出现的多余物颗粒、光纤断纤或异常胶粘等质量问题,有效提高了IFOG产品的装配质量。     

有限长通电圆柱导体温度分布的严格解及COMSOL模拟

用分离变量法精确求解了有限长通电圆柱导体在第二、三类边条件下不同测试点的温度随时间的变化关系,并利用COMSOL多物理场仿真软件进行数值模拟,得到了温度在圆柱体内的分布图.与实验测出的圆柱体上下表面及侧面中间位置的温度随时间的变化关系相比,数值模拟结果与实验曲线变化趋势一致,可达到的最高温度完全符合,并与解析解所得当通电时间足够长时系统会趋于一个稳定的极限温度分布的结果相符合.     

混合表面活性剂-铬天青S与铜显色反应研究及应用

在曲拉通X-100(TritonX-100)和乳化剂(OP)存在下,基于Cu2+-铬天青S(CAS)的显色反应,建立了分光光度法测定微量铜的新方法.通过Cu2+与CAS-Triton X-100-OP形成灵敏度较高的多元配合物,来测量铜含量.络合物的最大吸收波长为618nm,表观摩尔吸光系数为ε=6.62×105L·m...     

肖特基结的制备与势垒测量

采用磁控溅射方法在Nb07％-SrTiO3基片上制作Au薄膜接触,并在氧气气氛下750℃退火30 min,在室温环境下测量电流电压和电容电压等特性曲线,观测整流特性,根据相应实验数据采用饱和电流法、电容C-2与反偏电压V成线性关系计算肖特基势垒的大小.     

有旋和无旋气固两相湍流的不同结构

了解有旋和无旋突扩气粒两相详细湍流结构对控制燃料-空气混合、火焰稳定以及燃烧污染物生成很重要.周力行等曾经对其中的两相时平均流场和湍流特性进行过雷诺平均的RANS模拟和测量的研究,但是BANS模拟不能给出详细的两相湍流的瞬态结构.本文建立了二阶矩两相亚网格尺度应力模型,对有旋和无旋同轴突扩气粒两相流动进行了双流体大涡模...     

La1-x／2Pr1-x／2SrxCuO4的电输运性质和超导电性

La1-x/2Pr1-x/2SrxCuOy(LPSCO)多晶样品采用传统的固相反应法制备.X射线衍射表明:LPSCO具有典型的空穴搀杂的T-214相的结构.磁化率测量显示:Sr搀杂在0.05≤x≤0.30范围内具有超导转变;Tc随x的增大呈抛物线形式变化,且在x=0.18时达到最大值28K.电阻的测量显示:随搀杂量的增大,系统呈现从绝缘到半导体,最后到金属的导电行为的变化;在欠掺杂区,正常态电阻温度关系符合ρ(T)=ρ0 αT-ClnT;而在过掺杂区,对数项消失.本文从替代所引起的晶体结构和载流子特性变化解释了Sr掺杂样品的电输运行为和超导特性.     

Geometrical optics-based ray field tracing method for complex source beam applications

Due to the fact that traditional ray field tracking approaches require a large number of geometrical optical(GO) ray tubes,they are very inefficient in many practical applications.An improved ray model scheme for a complex source beam(CSB) tracking technique is proposed in this paper.The source field can be expressed by a superposition of CSBs,then every CSB basis function has a Gaussian-type amplitude distribution and is suitable for replacing a GO ray tube in the ray tracing approach.The complex phase matching technique is adopted to find the reflected beam in the reflection point where local approximation is used to represent the curved surface in its neighborhood.A new solution to multiple reflections using the conventional right-handed reflected system is used to track the field easily.Numerical results show the accuracy of the proposed method.