人工神经网络分光光度法同时测定铜（Ⅱ）、镉（Ⅱ）、镍（Ⅱ）和锌（Ⅱ）

在pH 9.80的硼砂-氢氧化钠缓冲溶液、十六烷基三甲基溴化铵（CTMAB）存在下,铜（Ⅱ）、镉（Ⅱ）、镍（Ⅱ）和锌（Ⅱ）与二甲酚橙（XO）发生灵敏的显色反应,所形成的络合物吸收光谱严重重叠,各组分间相互干扰。采用人工神经网络结合分光光度法,设计不经分离同时测定铜（Ⅱ）、镉（Ⅱ）、镍（Ⅱ）和锌（Ⅱ）含量的方法。结果表明...     

Different temperature dependence of carrier transport properties between AlxGal-xN/InyGal-yN/GaN and Alx Gal-xN/GaN heterostruct ures

The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

活性炭负载Pt/Fe3O4催化剂及其选择性转移加氢肉桂醛的催化性能

A variety of spherical and structured activated charcoal supported Pt/Fe₃O₄ composites with an average particle size of ～100 nm have been synthesized by a self-assembly method using the difference of reduction potential between Pt (IV) and Fe (Ⅱ) precursors as driving force. The formed Fe₃O₄ nanoparticles (NPs) effectively prevent the aggregation of Pt nanocrystallites and promote the dispersion of Pt NPs on the surface of catalyst, which will be favorable for the exposure of Pt active sites for high-efficient adsorption and contact of substrate and hydrogen donor. The electron-enrichment state of Pt NPs donated by Fe₃O₄ nanocrystallites is corroborated by XPS measurement, which is responsible for promoting and activating the terminal C=O bond of adsorbed substrate via a vertical configuration. The experimental results show that the activated charcoal supported Pt/Fe₃O₄ catalyst exhibits 94.8% selectivity towards cinnamyl alcohol by the transfer hydrogenation of cinnamaldehyde with Pt loading of 2.46% under the optimum conditions of 120℃ for 6 h, and 2-propanol as a hydrogen donor. Additionally, the present study demonstrates that a high-efficient and recyclable catalyst can be rapidly separated from the mixture due to its natural magnetism upon the application of magnetic field.     

脱氢枞酸基D-A型分子的合成、空间构型及光谱性能

对三苯胺进行溴代和C-N偶联反应合成4-萘基三苯胺(a),对脱氢枞酸进行酯化、溴代、硝化、还原和C-N偶联反应合成13-[N,N-(4-萘基苯基)-苯基]胺基-脱异丙基脱氢枞酸甲酯(b)及13-[N,N-双(4-萘基苯基)]胺基-脱异丙基脱氢枞酸甲酯(c)两个化合物,通过1H MNR,13C MNR及MS对化合物的结构进行表征。为了研究化合物结构与光谱性能之间的关系,首先利用Gaussian 09程序采用密度泛函DFT/B3LYP方法,对三个化合物的空间构型进行全优化,得到它们的键长、键角和二面角,对比发现脱氢枞酸骨架和萘环的引入会影响化合物的共平面性,而萘环的引入会增大化合物的共轭程度。光谱性能方面,研究了三种化合物在甲醇、二氧六环、四氢呋喃、二氯甲烷和环己烷这5种极性逐渐减小的溶剂中的荧光发射光谱和紫外吸收光谱。结果表明,在荧光光谱中,化合物a,b和c在不同极性溶剂中最大荧光发射波长均有不同程度位移,在甲醇中最大,在环己烷中最小,但是位移并非随着极性的增大而只发生红移,在二氯甲烷、四氢呋喃和二氧六环3种极性依次增大的溶剂中,a,b,c的荧光发射波长均随着溶剂极性的增大而发生较大程度的蓝移;在同一溶剂中,化合物b和c相对于a的荧光发射波长依次发生红移,c的红移程度与b差距不大。紫外吸收光谱中,三个化合物在不同极性溶剂中的最大吸收波长也有差异,在200～250 nm区间,三个化合物均在二氯甲烷中有较大位移,在300～350 nm区间,在甲醇中位移较大,而在250～300 nm区间,最大吸收波长差别不大;在同一溶剂中,它们在300～350 nm区间的最大吸收波长差别较大,化合物c较a红移26 nm。结合结构优化所得数据可以证明,化合物的共轭程度对荧光发射光谱和紫外吸收光谱均有影响,而共平面性对荧光发射光谱影响较大。化合物a,b和c在不同极性溶剂中荧光发射光谱和紫外吸收光谱的较大变化,表明它们有明显的溶致变色行为,具有作为分子探针探测外部环境极性大小的潜能。     

GC法同时测定酚氨咖敏片中4种组分

建立了同时测定酚氨咖敏片中对乙酰氨基酚、氨基比林、咖啡因和马来酸氯苯那敏4组分含量的毛细管气相色谱法。采用SE-30大口径毛细管色谱柱(30 m×0.53 mm,1.0μm),柱温190℃,汽化室温度220℃,检测器为FID,检测温度250℃,载气为高纯N2,分流比为1∶6,内标为盐酸麻黄碱,以无水乙醇为溶剂,样品无需衍生化处理,直接进样测定。样品中各组分完全分离,辅料无干扰,对乙酰氨基酚、氨基比林、咖啡因和马来酸氯苯那敏分别在20~2000μg/mL、15~1500μg/mL、10~500μg/mL和20~100μg/mL范围内线性关系良好(r0.999),各组分的平均回收率在99.6%~101.2%范围内,RSD2%。     

钐掺杂对锰锌铁氧体微波电磁性能的影响

采用同相法合成了钐掺杂的锰锌铁氧体Mn0.3Zn0.7Fe2-xSmxO4,(x=0,0.01,0.02,0.04,0.06),通过XRD对合成粉末进行了晶体结构的分析,结果表明:当x≤0.02时,制得的粉体为相对较纯的尖品石型铁氧体.稀土掺杂锰锌铁氧体的晶格常数随着掺钐量的增加先增大后减少.使用Agilent8722ET网络分析仪在2～18 GHz的频率范围内对其微波电磁特性进行测试,结果显示,当掺钐量为0.02时,在9～18 GHz的频率范围内电磁参数ε'和ε"稍有增加,ε"最大值出现的位置移向低频.μ"和μ'峰值均大大增加,最大值分别达到6.2和5.5,该掺钐晕下微波电磁性能最佳.利用微波电磁理论分析了电磁参数的变化机制.     

Implementing a Multi-Qubit Quantum Phase Gate Encoded by Photonic Qubit

A protocol is proposed to implement a three-qubit phase gate for photonic qubits in a three-mode cavity. The idea can be extended to directly implement a N-qubit phase gate. We also show that the interaction time remains unchanged with the increasing number of qubits. In addition, the influence of cavity decay and atomic spontaneous emission on the gate fidelity and photon loss probability is also discussed by numerical calculation.     

铁基合金激光熔覆层高温润滑磨损性能

 为提高40Cr合金钢的表面耐磨性,采用预置激光熔覆法在40Cr基体表面制备铁基合金涂层, 利用扫描电镜观察分析熔覆层显微组织形貌,用显微硬度仪测试熔覆层截面显微硬度,用摩擦磨损试验机测定在润滑条件下基体、熔覆层的摩擦系数随温度变化的规律。研究结果表明:熔覆层与基体实现良好冶金结合,熔覆层横截面微观组织呈现平面晶、树枝晶和胞状晶分布;熔覆层硬度值介于617.5~926.6 HV0.2之间,基体硬度介于205.2~278.2 HV0.2之间;在200 ℃以下,熔覆层摩擦系数在磨程中趋于平稳,在0.1附近轻微波动,小于基体平均摩擦系数;当温度超过200 ℃,油膜分解,引发润滑失效,磨损方式向干摩擦转化,磨损机理从微切削磨损主导向粘着磨损、磨粒磨损和氧化磨损复合磨损方式转化。     

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

Chemical disorder on the surface and lattice strain in GaN implanted by Fe¹⁰⁺ ions are investigated. In this study, 3-MeV Fe¹⁰⁺ ions fluence ranges from 1×10¹³ ions/cm² to 5×10¹⁵ ions/cm² at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.