Electroluminescence quenching mechanism in Rubrene doped host-guest system

In this paper, the electroluminescence quenching mechanism in a 5,6,11,12-tetraphenylnaphthacene (Rubrene) doped host--guest system is studied by utilizing a specially designed organic light-emitting diode with an emission layer consisting of a few periodic host/guest structures. Tris-(8-hydroxyquinoline) aluminium (Alq₃) and Rubrene are used as the host and the guest, respectively. The thickness variation of the guest layer in each period enables the study of the effect of molecule aggregation, and the thickness variation of the host layer suggests a long range quenching mechanism of dipole--dipole interaction. The long range quenching mechanism is a F?rster process, and the F?rster radius of Rubrene is between 3 and 10~nm.     

分段线性光谱分类器的优化算法设计

快速准确地识别污染气体种类是光谱法环境监测技术对分类器的基本要求。分段线性分类器简单、计算量小,可以较好的逼近非线性分界面。文章根据最大化分类间隔的思想,结合分段线性分类器和线性支持向量机,设计了单边分段线性分类器优化算法。对某气体模拟剂光谱的分类实验表明,经过优化算法训练的分段线性分类器可以用较少的超平面逼近非线性分界面,而且得到更高的识别准确率。     

量子阱结构对有机电致发光器件效率的影响

实验中共制备了五种有机量子阱结构电致发光器件,分别对这五种量子阱结构器件的电致发光特性进行了研究,分析了量子阱结构的周期数和势垒层的厚度对器件电学性能的影响.实验结果表明适当周期数的量子阱结构器件的亮度和电流效率比传统的三层结构器件的要大,主要原因是量子阱结构对电子和空穴的限制作用,这种限制作用提高了电子和空穴在发光层中形成激子和复合的概率,从而提高了发光的亮度和效率.当改变阱结构器件中势阱层的厚度时,也会对器件的亮度和效率产生影响,采用适当的势阱层厚度能够提高器件的亮度和效率. 关键词： 量子阱结构 电致发光 电流效率 光谱     

Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.     

超声检测中常用激励波形的高精度相控发射实现

超声无损检测根据不同的检测需求使用不同的激励波形,而超声相控阵技术的应用则要求各通道的激励波形能够相控发射。分析了不同检测对象、不同检测方法对激励信号的波形类型要求,研究了基于FPGA主控的数字式超声检测平台下实现单通道方波脉冲、尖脉冲、正弦波形和任意波形等的发射方法,以及以上各种波形在多通道高精度相控发射时的实现方法。实验表明,各种波形的激励信号都实现了高精度相控发射,最高可达1ns的延时精度。     

Solar cells based on the poly(N-vinylcarbazole):porphyrin: tris(8-hydroxyquinolinato) aluminium blend system

Organic solar cells based on poly(N-vinylcarbazole)(PVK):porphyrin:tris(8-hydroxyquinolinato) aluminium(Alq3) blend p-n junction systems have been fabricated in this work.The roles of the different components in the blend system and of the amount of porphyrin have been investigated.The 5,10,15,20-tetraphenylporphyrin(TPP) and 5,10,15,20-tetra(o-chloro)phenylporphyrinato-copper(CuTClPP) are used in the solar cells.The results show that TPP is better than CuTClPP in enhancing the performance of PVK:Alq3 solar cells.When the weight ratio of PVK:TPP:Alq3 is 1:1.5:1,the best performance of solar cell is obtained.The open circuit voltage(V oc) is 0.87 V,and the short circuit current(J sc) is 17.5 μA·cm 2.In the ternary bulk hereojunction system,the device may be regarded as a cascade of three devices of PVK:TPP,TPP:Alq3 and PVK:Alq3.PVK,TPP and Alq3 can improve the hole mobility,light absorption intensity and electron mobility of the ternary bulk hereojunction system,respectively.     

晶体相位延迟量的测量

通过2束平面偏振光的合成推导出椭偏测量的基本原理,给出了用标准1/4波片测量晶体相位延迟量的测量原理.在测量时不必知道待测晶体的具体光轴方位,只需调节标准1/4波片、待测晶体的快(慢)轴与起偏方向平行,然后将晶体逆时针转过45°.测量装置采用了步进电机带动检偏器旋转,使用光电探测器采集数据,经计算机处理,根据数据曲线直接读出待测晶体的相位延迟量.该方法可以方便快捷地测量任意相位延迟.     

Performance improvement cells using bathocuproine of MEH-PPV：PCBM solar and bathophenanthroline as the buffer layers

In this work, bathocuproine （BCP） and bathophenanthroline （Bphen）, commonly used in small-molecule organic solar cells （OSCs）, are adopted as the buffer layers to improve the performance of the polymer solar cells （PSCs） based on poly（2-methoxy-5-（2-ethylhexyloxy）-1,4-phenylenevinylene） （MEH-PPV）： [6,6]-phenyl-C61-butyric acid methyl ester （PCBM） bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-am BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen （i） increasing the optical field, and hence the absorption in the active layer, （ii） effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum （Al） interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance （Rs）, and （iii） preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.     

CF_2自由基与HNCO反应机理的量子化学研究

采用密度泛函理论B3LYP方法研究了CF_2自由基与HNCO的反应机理,并在B3LYP/6-311++G**水平上对反应物、中间体、过渡态进行了全几何参数优化.为了得到更精确的能量值,又用CCSD(T)/6-311++G**方法计算了在B3LYP/6-311++G**水平优化后的各个驻点的相对能量.根据统计热力学及用Winger校正的Eyring过渡态理论,利用自编程序,计算不同温度下低势垒反应的平衡常数和速率常数.计算结果表明单重态的CF_2自由基与HNCO的反应有四条反应通道,三重态的CF_2自由基与HNCO的反应有两条反应通道.其中单重态反应通道CF_2+HNCO→1IM1→1TS1→1IM2→1TS2→1IM3→CF_2NH+CO(P1)为主反应通道.三重态反应通道CF_2+HNCO→~36IM1→~36TS1→~36IM2→HCF_2+NCO(~3P5)为主反应通道.     

锗烯与异氰酸多通道反应的理论计算

采用密度泛函理论B3LYP方法研究了单重态GeH₂与HNCO的反应机理.在B3LYP/6-311++G**水平上对反应物、中间体、过渡态进行了全几何参数优化,通过频率分析和内禀反应坐标（IRC）确定中间体和过渡态,用QCISD（T）/6-311++G**方法计算了各个驻点的单点能.计算表明单重态的锗烯与异氰酸的反应有抽提氧、插入N-H键、抽提亚氨基的反应路径.采用经Winger校正的Eyring过渡态理论分别计算了1个大气压、不同温度下反应势垒较低通道的热力学及动力学性质,结果表明插入N-H键反应（GeH₂+HNCO→IM7→TS6→P2）通道在温度400 K～1400 K内,有较高的平衡常数和反应速率常数,为主反应通道,主产物为GeH₃NCO.