一种手性甲壳型液晶高分子的稀溶液行为及链刚性

用激光光散射和粘度法研究了一系列窄分子量分布的新的手性甲壳型液晶聚合物P1～P6的溶液行为及其链刚性.研究发现四氢呋喃是聚合物P1～P6的良溶剂.在四氢呋喃溶液中,聚合物P1～P6的特性粘数[η]和均方根旋转半径z12对重均分子量Mw的依赖关系分别是[η]=(2.75±0.05)×10-3Mw0.78±0.02和z12=(1.53±0.04)×10-2Mw0.60±0.01.按照YamakawaFujiiYoshizaki蠕虫状圆筒模型的粘度理论和BohdaneckyBushin表达式,求得聚合物的单位围长摩尔质量ML=(29.8±1.0)×102nm,构象保持长度q=(15.4±3.0)nm.q和MHS方程指数α的值说明这类在结构上属于侧链型液晶高分子的聚合物在良溶剂四氢呋喃中呈现比较伸展的刚性链构象,其链刚性与半刚性主链液晶高分子的相似.     

乙醛二聚体内蓝移型氢键的理论研究

利用理论方法研究了乙醛二聚体内的氢键. 在MP2/6-31＋G(d), B3LYP/6-31＋G(d), B3LYP/6-311＋＋G(d,p)和B3LYP/6-311＋＋G(3df,2p)水平上, 利用常规方法和均衡校正方法对3种稳定的乙醛二聚体进行了几何优化和振动频率计算. 计算结果表明: 在二聚体A和C中乙醛中C—H键强烈收缩, 存在显著的C—H…O蓝移型氢键. 自然键轨道(NBO)分析表明, 电子供体轨道和电子受体轨道之间相互作用的稳定化能、分子内电子密度重排、轨道再杂化和结构重组是决定氢键红移和蓝移的主要因素. 其中, 轨道间稳定化能属于键伸长效应, 分子内电子密度重排、轨道再杂化和电子受体内部结构重组属于键收缩效应. 在二聚体A和C中, 由于键收缩效应处于优势地位导致C—H…O蓝移氢键存在.     

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories(MRAMs) with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor(CMOS) process respectively and different magnetic tunneling junctions(MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad(Si) in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.     

Gd~(3+)掺杂浓度对NaErF_4∶Yb纳米晶上转换荧光性能的影响

采用温和的溶剂热法制备较强红光发射的NaErF4∶Yb,Gd上转换纳米晶,控制Gd~(3+)的掺杂浓度实现了晶相和尺寸可控以及上转换荧光的增强。X射线衍射谱(XRD)、透射电子显微镜图像(TEM)和上转换发射光谱结果分析表明,Gd~(3+)掺杂可以有效地促进NaErF_4纳米晶的晶相由立方相向六角相转变,并且减小纳米粒子的尺寸。随着Gd~(3+)掺杂浓度的上升,上转换荧光强度明显增大。当Gd~(3+)摩尔分数为25%时,样品的上转换荧光强度达到最大。同时,研究了在980 nm近红外激光激发下,Yb~(3+)与Er~(3+)间有效的能量传递以及上转换发光机制。     

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator(SOI) metaloxide-silicon(MOS) field-effect-transistors(FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.     

Hybrid device for acoustic noise reduction and energy harvesting based on a silicon micro-perforated panel structure

A kind of hybrid device for acoustic noise reduction and vibration energy harvesting based on the silicon micro- perforated panel （MPP） resonant structure is investigated in the article. The critical parts of the device include MPP and energy harvesting membranes. They are all fabricated by means of silicon micro-electro-mechanical systems （MEMS） tech- nology. The silicon MPP has dense and accurate micro-holes. This noise reduction structure has the advantages of wide band and higher absorption coefficients. The vibration energy harvesting part is formed by square piezoelectric membranes arranged in rows. ZnO material is used as it has a good compatibility with the fabrication process. The MPP, piezo- electric membranes, and metal bracket are assembled into a hybrid device with multifunctions. The device exhibits good performances of acoustic noise absorption and acoustic-electric conversion. Its maximum open circuit voltage achieves 69.41 mV.     

同轴交错圆盘加载波导慢波结构高频特性的研究

采用多导体传输线分析方法, 对同轴交错圆盘加载波导慢波结构进行了理论分析, 得到了这种慢波结构的色散方程; 利用该色散方程, 得到的色散特性与HFSS仿真软件模拟结果符合良好. 分析了结构参数的变化对同轴交错圆盘加载波导慢波结构的色散特性影响. 结果表明: 增加内径和减小慢波结构的单位周期长度可以拓展慢波结构的带宽. 对同轴圆盘加载波导和同轴交错圆盘加载波导两种慢波结构的色散特性进行了比较, 结果表明: 采用圆盘交错加载方式可以减弱色散, 拓展带宽. 研究结果对同轴交错圆盘加载波导在毫米波行波管中的应用具有指导意义. 关键词： 行波管 同轴交错圆盘加载波导 慢波结构 色散特性     

传像光纤、光纤面板及光锥制造新方法探索

利用高折射率光纤填充微结构预制棒孔洞的方法,制造直径70 mm、长度200 mm的大尺寸传像光纤预制棒,像素数为547.为提高传像元件的像素数,将预制棒先拉伸成直径约为30 mm的二次预制棒,通过切削、并熔后拉伸,得到像素数为3829的传像微结构光纤及其面板和光锥,其理论数值孔径为0.55.经初步测试发现,其传像效果良好.此方法利用微结构光纤技术制造传像光纤、面板和光锥,简单易行,成本低,能有效提高像素数,有望成为规模化制造高分辨率、高质量传像元件的新方法.     

Coryfolia D的全合成

以3,4-二羟基苯甲醛和2,4-二羟基苯乙酮为起始原料,经C-异戊烯基化、保护酚羟基、羟醛缩合、催化环化、DDQ脱氢及去保护基等反应,首次完成了天然产物异戊烯基黄酮Coryfolia D的全合成,总收率11.8％.所有新化合物的结构经1H NMR,IR和MS表征.