二甲基硫分子的共振增强多光子电离解离过程的实验研究

本文报道了在280~286.5 nm区域内,通过共振增强多光子电离-时间飞行质谱和质量选择光电离激发谱对二甲基硫分子的光电离和光解离通道进行了研究.实验结果表明,在280~286.5 nm区域内,二甲基硫分子以母体分子的电离通道为主,即首先电离生成母体离子然后母体离子再解离生成碎片离子.     

视觉刺激条件下的听感差别阈限测量

视听交互的重要性日益突出,但视觉刺激对听觉感知的影响尚缺乏全面深入的研究。以视觉刺激下人耳对声音的主观听感差别阈限变化为研究对象,在主观听觉实验中施加颜色、质量、亮度、运动状态四个不同属性视觉刺激,同时测量纯音信号的响度、主观音长和音高的听感差别阈限。通过与无视觉刺激下相应差别阈限的比较,分析不同视觉条件对响度感知、主观音长感知、音高感知能力的影响。实验数据显示,施加视觉刺激后主观听觉感知的差别阈限值增大,主观音长、音高和响度的差别阈限值平均分别提高了45.1%,14.8%和12.3%。进一步分析的结果表明,施加视觉刺激后基本的听觉感知能力呈下降趋势。同一视觉属性的不同水平视觉条件对听觉感知的影响程度不同,主观听感的变化呈现出一定的规律性,即视觉刺激越舒适,听感的差别阈限变化越小。     

蓝宝石衬底上生长的Ga2+xO3-x薄膜的结构分析

利用卢瑟夫背散射/沟道技术和金属有机化学气相沉积方法, 对蓝宝石衬底上 在不同温度、压强下生长的Ga_2+xO_3-x薄膜进行结构和结晶品质的测量与分析; 并结合高分辨X射线衍射分析技术, 通过对其对称(402)面的θ–2θ及ω扫描, 确定了其结构类型及结晶品质. 实验表明: 在相同的生长温度(500 ℃)下, 结晶品质随压强的下降而变好, 生长压强为15 Torr (1 Torr=133.322 Pa)的样品其结晶品质最好, 沿轴入射之比χ_min值为14.5%; 在相同的生长压强(15 Torr)下, 结晶品质受生长温度的影响不大, 所以, 生长温度不是改变结晶品质的主要因素; 此外, 在相同的生长条件下制备的样品, 分别经过700, 800和900 ℃退火后, 其结晶品质随退火温度的变化而变化. 退火温度为800 ℃的样品的结晶品质最好, χ_min值为11.1%; 当退火温度达到900 ℃时, 样品部分分解; 经热处理的样品其X射线衍射谱中有一个强的Ga₂O₃ (402)面衍射峰, 其半峰全宽为0.5°, 表明该Ga₂O₃外延膜是(402)择优取向. 关键词： 氧化镓 卢瑟夫背散射 X射线衍射 结晶品质     

THERMALLY ACTIVATED FLUX MOTION IN HIGH-Tc SUPERCONDUCTORS

Using the modified Anderson-Kim theory of flux creep and the Bean model, we derive an analytical ex-pression for magnetic relaxation of high-T_c superconductors, which is applicable in the whole flux creep region. The high driving force limit of the expression gives the usual logarithmic decay law and its low driving force limit takes the exponential form. Theoretical analysis is in agreement with the existing experimental results.     

Structural, Morphology and Optical Properties of Epitaxial ZnO Films Grown on Al2O3 by MOCVD

Epitaxial ZnO films are grown on Al2O3 （0001） by the MOCVD method. These films are high quality wurtzite crystals with （0001） orientation. Big hexagonal crystallites （diameter from several decades to 100 μm） are found on the surface. Inside these crystallites, a stronger luminescence is observed compared with the plain area. Transmission electronic microscopy reveals that the film is thicker inside the hexagonal crystallites than the plain area, and some crystallites are not connected with each other and are slightly rotated with respect to their neighbours.     

Growth of Strain Free GaN Layers on （0001） Oriented Sapphire by Using Quasi-Porous GaN Template

We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.     

迈克耳逊干涉仪测激光波长的系统误差

本文探讨了迈克耳逊干涉仪测激光波长的系统误差的产生原因并提出了减小这一误差的方法。     

Na掺杂反式聚乙炔中的孤子晶格的能谱与电子束缚态

从离散的ＳＳＨ模型出发，考虑了链内的电子相互作用，以及由杂质和周围链上的荷电孤子产生的库仑势的影响，探讨了各种掺杂浓度的反式聚乙炔中孤子晶格的能谱与电子束缚态。计算结果表明：在孤子晶格的能谱中，在价带底有两条定域能级，在导带顶存在着多个电子束缚态，随掺杂浓度的升高，束缚态的局域性减弱，禁带中的孤子能级形成孤子能带。当掺杂浓度高达１６．６７％时，所有的电子束缚态都消失，转变为扩展态。孤子晶格的禁带宽度随着掺杂浓度的增加而增大，最高占据态与导带底之间的能隙则随之逐渐减小。孤子能带底与价带顶之间的能隙在临界浓度附近有一极大值。还讨论了电子－电子相互作用对孤子晶格能谱的影响。 关键词：     

Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy

This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker films grown on the buffer layer with different polarity by hydride vapour epitaxy technique (HVPE). The surface morphology, structural and optical properties of these HVPE-GaN epilayers are characterized by wet chemical etching, scanning electron microscope, x-ray diffraction, and photoluminescence spectrum respectively. It finds that the N-polarity film is unstable against the higher growth temperature and wet chemical etching, while that of GaN polarity one is stable. The results indicate that the crystalline quality of HVPE-GaN epilayers depends on the polarity of buffer layers.     

Effect of Crucibles on Qualities of Self-Seeded Aluminium Nitride Crystals Grown by Sublimation

Self-seeded aluminium nitride （AlN） crystals are grown in tungsten and hot pressed boron nitride （HPBN） crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution transmission electronic microscopy （HRTEM）, scanning electron microscopy （SEM） and Micro-Rarnan spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.