改进的SILAR法制备ZnO薄膜及其表征

采用一种改进的液相成膜技术——连续离子层吸附与反应(SILAR)法, 用锌氨络离子\[Zn(NH3)4\]2+ 溶液作为独立的前驱体溶液, 以载玻片为衬底, 在(125±5) ℃的温度下沉积出致密、 透明的ZnO薄膜。 分别用冷场发射型扫描电镜(FESEM)和X射线衍射(XRD)分析了薄膜样品的表面形貌和结晶状态, 用紫外可见分光光度计(UV-Vis spectroscopy)研究了薄膜样品的发光性能。 结果表明: 获得样品为六角纤锌矿结构的多晶薄膜材料沿\[002\]方向择优生长; 样品表面均匀、 致密, 厚度约为550 nm;在可见光波段具有高的透射率(＞80％)。 A modified solution method,successive ionic layer adsorption and reaction(SILAR),was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) ℃ in mixed ion precursor solution. The surface morphology and crystallizations of films were analyzed by field emission scanning microscopy(FESEM) and X ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV Vis)spectroscopy. The results show that the obtained samples are polycrystalline films of hexagonal wurtzite structure,with the preference of [002\] orientation. The as deposited films exhibit uniform and compact surface morphology, with the film thickness of 550 nm, and have high transmittance in the visible band(＞80％).     

金纳米线阵列制备及其光谱特性

利用电化学沉积方法在重离子径迹模板中制备出直径从45 nm到200 nm, 长径比达700的金纳米线阵列, 利用扫描电子显微镜(SEM)和X射线衍射(XRD)对所制备金纳米线的形貌及晶体结构进行分析, 结果表明, 在1.5 V(无参比电极)沉积电压下所制备出的直径为200 nm金纳米线沿[100]晶向具有较好择优取向. 利用紫外-可见光谱(UV-Vis)对镶嵌在透明模板中平行排列的金纳米线阵列光学特性进行研究, 发现金纳米线直径为45 nm时, 其紫外可见光谱在539 nm处有强烈吸收峰, 随着金纳米线直径增加, 吸收峰红移, 当金纳米线直径达到200 nm时, 其吸收峰峰位移至700 nm. 结合金纳米颗粒相关表面等离子体共振吸收效应对实验结果进行了讨论.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.     

PET核孔膜在中药水提液分离纯化中的应用研究

中药水提液成分复杂,随着中药制药的发展,迫切需要建立一种简单有效的中药分离纯化方法。膜分离技术作为一种简单、直接、高效的物质分离方法,在中药分离纯化中由于能耗低、无二次污染而被广泛应用。本工作通过制备不同孔径的核孔膜,将中药水提液进行多级过滤,并对其分离性能进行测试和表征。实验证实核孔膜对水提液的微滤可以滤除尺度1 μm以上的杂质,且不改变其性状;对水提液的超滤可以滤除蛋白质和淀粉;核孔膜进一步修饰后,能够对中药有效成分,如芍药苷、绿原酸等进行有效截留。结果表明,将核孔膜应用于中药水提液分离、纯化是可行的。     

重离子径迹模板法合成银纳米线

聚碳酸脂(PC)膜被高能重离子辐照后沿入射离子路径产生潜径迹, 把带有潜径迹的膜经紫外光敏化后置于NaOH 溶液中进行蚀刻, 通过选择蚀刻条件, 在PC 膜内得到直径从100 到500 nm 导通的核径迹孔. 以带有核径迹孔的PC 膜为模板, 用电化学沉积法制备出不同直径的银纳米线. 在特定的实验条件下(沉积电压25mV、电流密度1-2 mA·cm-2、温度50 益和电解液为0.1 mol·L-1的AgNO3溶液), 获得了沿[111]方向择优取向生长的具有单晶结构的银纳米线. 利用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)及选区电子衍射(SAED)等手段对银纳米线的形貌和晶体结构特征进行了表征.     

Ion track-based nanowire arrays with gradient and programmable diameters towards rational light management

Integrating nanowires with nonuniform diameter and random spatial distribution into an array can afford unconventional and additional means for modulating optical response. However, experimental realization of such a nanowire array is quite challenging. In this work, we propose a new fabrication strategy which takes advantage of ion track technology, via sequential swift heavy ion irradiation and ion track etching. Based on this strategy, we unprecedentedly realize nanowire arrays, using gold as an example, with gradient and programmable diameters in a controlled manner. We further demonstrate that such nanowire arrays can support broadband, tunable, and enhanced plasmonic responses. We believe that our new type of nanowire arrays will find great potential in applications such as light management and optoelectronic devices.     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above ±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.     

基于PET核孔膜制备有机无机复合纳滤膜（英文）

纳滤膜在海水淡化及饮用水净化领域起着越来越重要的作用,核孔膜作为一种重要的分离材料,具有均匀的孔径、可调的孔密度及无缺陷的表面,在水处理及精确分离应用方面有着潜在的优势,高孔密度的超薄核孔膜在制备高性能纳滤膜上具有很大的潜力。基于此,利用氧化锆作选择层,核孔膜作为支撑层制备出了三层结构的有机无机复合纳滤膜,聚多巴胺(PDA)与聚乙烯亚胺(PEI)中间层促进无机纳米粒子在膜表面形成无机层。制备出的复合膜可实现对不同盐的部分截留,表现出的截留顺序为Na₂SO₄>MgSO₄>MgCl₂>NaCl。     

重离子辐照制备电池用微孔膜及其阻抗性质

利用离子辐照结合径迹蚀刻方法制备聚丙烯(PP)微孔膜.用加速器产生的单核能为11.4MeV·u-1(总能量2245.8MeV)的197Au离子束辐照PP膜,剂量为1×108ions·cm-2.辐照后PP膜沿离子路径产生损伤区域,用硫酸与重铬酸钾的混合液进行蚀刻(5-30min),制备出孔径为380-1610nm的聚丙烯微孔膜.对膜的表面和断面形貌进行表征,微孔膜的孔径大小及空间分布均匀,孔道上下贯通,形状近似为圆柱形.给出了微孔膜的孔隙率理论公式.将制备的聚丙烯微孔膜用作锂离子电池隔膜,用电化学阻抗谱(EIS)测定浸满电解液的微孔膜的离子电导率,并与商用隔膜进行比较.分析表明辐照剂量和孔径大小均会影响膜的孔隙率和离子电导率,选择合适的辐照剂量和蚀刻时间,可以制备出孔隙率和离子电导率符合应用标准的聚丙烯微孔膜.