线性扫描极谱法测定盐酸二甲双胍

用线性扫描极谱法研究盐酸二甲双胍的电化学行为。在pH6.85的0.1mol·L-1磷酸氢二钠-磷酸二氢钾缓冲溶液中,盐酸二甲双胍于-1.165V(vs.SCE)处产生一灵敏的吸附波,其一次微分线性扫描峰电流与盐酸二甲双胍质量浓度在0.41～41.0mg·mL-1范围内呈线性关系,检出限(3S/N)为0.28mg·mL-1。对41.0mg·mL-1盐酸二甲双胍溶液进行6次平行试验,相对标准偏差(n=6)为0.72%。此方法已用于测定其片剂中盐酸二甲双胍的含量。     

线性扫描极谱法测定辛伐他汀

用线性扫描极谱法研究辛伐他汀的电化学行为。在pH 6.88的0.12mol·L-1磷酸氢二钠-磷酸二氢钾缓冲溶液中,辛伐他汀于-1.188V(vs.SCE)处产生一灵敏的吸附波,其一次微分线性扫描峰电流与辛伐他汀质量浓度在0.01～5.0mg·L-1范围内呈线性关系,检出限(3S/N)为7.0μg·L-1。对5.0mg·L-1辛伐他汀溶液进行6次平行试验,相对标准偏差(n=6)为0.53%,方法可用于测定其片剂中辛伐他汀含量。     

N-(2-羟基-1-萘甲酰胺基)-N'-苯基硫脲的合成及对汞离子的识别

设计合成了用于识别汞离子的ICT荧光传感分子N-(2-羟基-1-萘甲酰胺基)-N’-苯基硫脲(1),通过红外光谱、核磁共振谱和质谱表征了其结构。利用其荧光性质研究了该物质对几种重金属离子的识别性质,初步探讨了其结合模式。实验表明:在50%水-乙腈介质中主体分子1表现出对Hg2+良好的选择性,其结合比为1∶2。     

基于小波双尺度分析的光电小目标检测

 空间光电图像中的小目标检测可视为对目标信号的奇异值检测问题,而基于小波变换的多尺度分析是信号奇异值检测的重要方法。文中阐述了现有小波多尺度分析方法进行小目标检测的原理,并针对其运用中存在的模极大值线难以搜索以及目标定位精度不高的问题,利用小波函数的对称性及空间小目标信号近似对称的特点,提出了一种通过分析小波大小两个尺度来直接对光电小目标进行检测的方法,并对该方法进行了实现与仿真。仿真结果表明,该方法可以有效提高小目标的检测速度和定位精度。     

A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

A high voltage( 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed.The LIGBT features multiple trenches(MTs):two oxide trenches in the drift region and a trench gate extended to the buried oxide(BOX).Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field(RESURF) effect.Both increase the breakdown voltage(BV).Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop(Von).The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss(Eoff).The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10?3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes.     

A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration

A low on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) n-channel lateral double-diffused metal-oxide-semiconductor(LDMOS) is proposed and its mechanism is investigated by simulation.The LDMOS has two features:the integration of a planar gate and an extended trench gate(double gates(DGs));and a buried P-layer in the N-drift region,which forms a triple reduced surface field(RESURF)(TR) structure.The triple RESURF not only modulates the electric field distribution,but also increases N-drift doping,resulting in a reduced specific on-resistance(Ron,sp) and an improved breakdown voltage(BV) in the off-state.The DGs form dual conduction channels and,moreover,the extended trench gate widens the vertical conduction area,both of which further reduce the Ron,sp.The BV and Ron,sp are 328 V and 8.8 m.cm2,respectively,for a DG TR metal-oxide-semiconductor field-effect transistor(MOSFET) by simulation.Compared with a conventional SOI LDMOS,a DG TR MOSFET with the same dimensional device parameters as those of the DG TR MOSFET reduces Ron,sp by 59% and increases BV by 6%.The extended trench gate synchronously acts as an isolation trench between the high-voltage device and low-voltage circuitry in a high-voltage integrated circuit,thereby saving the chip area and simplifying the fabrication processes.     

基于non-PDC算法的T-S模糊时滞系统的控制

针对一类T-S模糊模型描述的非线性时滞系统,提出了基于非并行分布补偿(non-PDC)算法的模糊状态反馈控制方法。为了减少保守性,选择一个新的二重积分不等式,用以处理求导LyapunovKrasovskii泛函所得的积分项。不同于并行分布补偿(PDC)算法,本文给出的基于non-PDC算法的模糊状态反馈控制器不要求与模糊模型分享共同的隶属函数或者相同的模糊规则数目,因此具有更大的设计灵活性。为了进一步减少non-PDC算法带来的保守性,考虑隶属函数的边界信息,同时引入适当的松弛变量。最后给出卡车拖车模型的仿真实例,证明了所提方法的有效性。     

2-羟基-1-萘甲醛缩-2-萘甲酰腙对Zn2+的选择性识别

设计合成了识别Zn²⁺的荧光传感分子--2-羟基-1-萘甲醛缩-2-萘甲酰腙(3)。 通过红外光谱、核磁共振谱和质谱测试技术表征了其结构。 利用其光谱性质研究了该物质对几种过渡金属离子的识别性质,初步探讨了其结合模式。 结果表明,在乙腈介质中,受体分子3表现出对Zn²⁺良好的选择性,Zn²⁺的加入导致受体分子3的吸收光谱在435 nm处出现1新峰,其吸光度逐渐增强,同时于239、302、330、342和387 nm处观察到5个清晰的等吸收点;在516 nm处荧光增强101倍,而其它过渡金属只引起受体分子]3的荧光略微增强。 Job法实验揭示受体分子3与Zn²⁺的结合比为1∶1。     

大功率780 nm单管连续输出16 W和巴条连续输出180 W半导体激光器

设计并制备了780 nm大功率半导体激光器的单管和巴条。采用金属有机化学气相沉积技术制备的外延结构,分别使用GaAsP和GaInP作为量子阱和波导层,限制层是具有高带隙的AlGaInP材料。量子阱与波导层带隙0.15 eV,波导层与限制层带隙0.28 eV,抑制了载流子泄露。1.55μm厚非对称大光学腔波导结构抑制快轴高阶模,同时缓解腔面损伤问题。为进一步提高腔面损伤阈值,利用超高真空解理和钝化技术,在腔面上沉积了非晶ZnSe钝化层。条宽150μm、腔长4 mm的单管器件,在电流为15 A时,输出连续功率16.3 W未出现COD现象,斜率效率达到1.27 W/A,电光转换效率为58%,慢轴发散角9.9°,光谱半高宽为1.81 nm。填充因子为40%的厘米巴条,在192 A下实现连续输出功率180 W,电光转换效率为50.7%,光谱宽度仅为2.2 nm。     

邻羟基萘甲醛缩对二甲氨基苯甲酰腙的合成及其对锌离子的识别

设计并合成了用于识别锌离子的荧光传感分子——2-羟基-1-萘甲醛缩-4-二甲氨基苯甲酰腙(1),其结构经1H NMR,IR和MS表征。利用荧光光谱研究了在乙腈中1对过渡金属离子(Zn2+,Cd2+,Cu2+,Hg2+,Pb2+和N i2+)的识别能力。结果表明:1表现出对Zn2+的良好选择性,Zn2+的加入导致1的长波长荧光增强449倍。Job曲线确定1与Zn2+形成1∶1型配合物。