准分子激光增强高分子材料粘着力的机理研究

 由热方程计算激光与液体薄膜材料相互作用时的温度场,分析高分子材料表面熔化及材料表面液体膜汽化产生的材料的表面粗化;近一步分析高分子的断裂、F原子 替代等光化学反应;从而提出激光增强高分子材料的粘着力的表面粗化和光化学反应的机理。     

MICROSTRUCTURE AT THE INTERFACE OF TITANIUM CARBIDE AND NICKEL ALUMINIDES

Microstructure at the interface of titanium carbide and nickel aluminides in the samples obtained by infiltration of molten Ni₃Al alloy has studied by a scanning electron microscopy (SEM) and an analytical transmission electron microscopy (ATEM) with an energy dispersive spectrometer (EDS). It is found that the morphology at the interfaces between hard phase skeleton of TiC_0.7 and metallic phases depends on the ratio of Ti/C in carbide. Some periodic zigzag fringes are observed at a smooth interface between metallic phase and carbides in the sample of Ni₃Al/TiC_0.7. The results of analysis using EDS show that Ti in TiC_0.7 carbide is easier than that in TiC_0.7 to dissolve into the molten alloy during solid-liquid reaction. The formation of this periodic zigzag fringe,which may be a growth zone of a new Ti-Ni-Al phase,in the interface of TiC_0.7/Ni₃Al would occur during the initial stage of solidification.     

一类弱耦合非线性波动方程组的精确可控性

用Hilbert惟一性方法Schauder不动点定理,得到一类弱耦合非线性波动方程组Dirichiet边值问题的精确可控性．     

兽疫链球菌变异株产生的透明质酸的纯化及表征

用N-甲基-N′-硝基-N-亚硝基胍(NTG)对兽疫链球菌进行诱变,获得高产菌株.经过对该菌株的发酵培养,将产生的多糖经Savage法、季铵复合物沉淀法、DEAE-纤维素(DE52)离子交换层析法及SephadexG-75凝胶过滤法分离纯化.纯化的多糖结构经化学组成分析、核磁共振波谱、红外光谱及圆二色谱鉴定,证明了诱变得到的高产菌株(StreptococcuszooepidemicusJ18)再经发酵,得到的多糖为透明质酸.通过刚果红实验证明了透明质酸的构象为单股螺旋结构,其平均分子量约为1.16×10⁶.     

铥配合物的红外有机电致发光

合成了两种三价铥配合物,并将其制成双层结构器件。首次得到了直流低压驱动下,来自铥离子＾３Ｈ４→＾３Ｈ６电子跃迁红外（ＩＲ）发光。     

D-D结合型金刚石聚晶的高压合成研究

 为了探索功能金刚石聚晶的高压合成，使其具有优异的透红外和散热性能，我们采取了提高合成压力、温度和尽量减少结合剂的办法进行试验。首先探索如何使合成的金刚石聚晶具有D-D型结合，然后尽量减少结合剂，以合成出高密度的D-D型金刚石聚晶。为了尽量减少结合剂含量，不用粉末混合法，而是分别采用7~14 μm和63~80 μm粒度的金刚石为原料，与纯Ni或Ni₇₀Mn₂₅Co₅合金为基底积层组装，通过高温高压下触媒金属向金刚石晶粒间渗透进行烧结生长。在6.3 GPa的压力和1 440~1 650 ℃的不同温度下分别保持3~40 min。所得到的金刚石聚晶在触媒金属渗透得充分的区域形成了D-D结合型结构，而没有发现碳化物生成及金刚石表面石墨化等现象。     

600~760 ℃范围内超高压力的测定——铅熔点法

 在DS 6×800A压机上，用NiC-NiSi热电偶测量出高压腔内铅的熔点，再根据铅的液-固相变曲线得出所对应的压力。在600~760 ℃温度范围内，测定出高压腔内压力（1.27~6.62 GPa）与油压的对应关系。对两种不同传压介质腔内压力测定的结果表明，采用NaCl作内层传压介质后，其传压效果比不用NaCl只用叶腊石的情况提高了10%。     

Ti/AIN陶瓷界面反应的光电子能谱研究

用X射线光电子能谱(XPS)研究了在室温和超高真空条件下金属Ti淀积在AlN陶瓷表面上的化学反应过程.在金属Ti淀积之前,从AlN陶瓷的能谱中的Ols和Al2P的结合能可以看到因是样品的主要杂质,而且样品表面部分的Al被氧化.当样品淀积了金属Ti以后,发现刚淀积上去的Ti是氧化状态,还发现在Ti淀积的同时则Nls在高结合能处(402和406eV)出现新峰.随着Ti淀积厚度的增加,Ti低结合能的成份在增加而Al的氧化成份逐渐增加,Nls高结合能处的峰(402和406eV)也逐渐增高,更进一步成为主导地.N在 关键词：     

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiN_x mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiN_x mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiN_x mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)—from vertical in the window regions to the lateral in the regions over the mask.