液氮温区Y-Ba-Cu-O超导薄膜的研究

我们采用了rf磁控反应溅射的方法,在单晶ZrO_2YSZ和多晶SrTiO_3等基片上成功地制备了Y-Ba-Cu-O超导薄膜。所获得的零电阻转变温度达81K。膜厚为1—2μm。 本文对膜的成分、基片、R-T曲线和热处理过程等作了叙述。     

光泵Ba/He系统582.8nm碰撞诱导荧光辐射及其弛豫振荡

观察到光泵Ba/He混合物产生的582.8nm碰撞诱导荧光新谱线及其弛豫振荡.进行理论分析和计算,结果与实验相符合.     

Properties of a dielectric plate using entangled two-photon states

We theoretically study the properties of a dielectric plate with a modified Hong-Ou-Mandel interferometer. The fourth-order correlation functions are calculated in two regimes, which are divided depending on the relative size between the thickness of the dielectric plate and the one-photon coherence length. When the thickness of the dielectric plate is less than the one-photon coherence length, a novel modulation behavior of the coincidence rate is observed, which has not been discussed before. If the thickness of the dielectric plate is larger than the one-photon coherence length, coalescence and anti-coalescence are observed. The obtained results highlight the effects of a linear optical element on fourth-order interference.     

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures.On the basis of our early research on the surface photovoltage of GaAs photocathodes,and comparative research before and after activation of reflection-mode GaAs photocathodes,we further the comparative research on transmission-mode GaAs photocathodes.An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer.By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure,we can obtain the equations for the surface photovoltage(SPV) curve before activation and the spectral response curve(SRC) after activation.Through experiments and fitting calculations for the designed material,the body-material parameters can be well fitted by the SPV before activation,and proven by the fitting calculation for SRC after activation.Through the comparative research before and after activation,the average surface escape probability(SEP) can also be well fitted.This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method,which only measures the body parameters by SRC after activation.It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes,and optimize the Cs-O activation technique in the future.     

脉冲激光烧蚀碲镉汞材料的等离子体发射谱

脉冲激光辐照处于不同背景气压下的Hg0.8Cd0.2Te材料表面,用时间和空间分辨诊断技术探测了激光照射后产生的等离子体发射谱,根据所获得的飞行时间谱测量了等离子体中粒子的出射速度,结果表明粒子速度随着出射距离的增加迅速减小,且背景气压对出射速度有很大的影响,而激光能量对粒子速度的影响不大。另外根据谱线的展宽计算了等离子体中的电子密度,结果表明,电子密度在激光辐照样品后的短时间内迅速减小,且电子密度最大的位置不是出现在靶的表面而是在距表面一定距离处。     

Study on the approximative formula for the far-field of a Gaussian beam under circular aperture diffraction and its divergence

The approximative formula for the far-field diffraction of a Gaussian beam through a circular aperture is obtained by using the superposition of Gaussian beams instead of the aperture function, and the explicit expression for calculating the beam divergence is also gained. Using the formula, the influences of the aberrations on the far-field wavefront and the beam's divergence are researched, and the results show that the large aberrations badly affect the far-field wavefront and the divergence. It is suggested that the aberrations and the diffractions should be avoided when designing the transmitter.     

铟封前后透射式GaAs光电阴极光谱响应特性的测试与分析

利用自行研制的光谱响应测试仪工程化样机,对透射式GaAs光电阴极在高温激活结束、低温激活结束以及铟封成管后的光谱响应特性进行了测试。结果显示,铟封后阴极整个响应波段的光谱响应下降,长波响应受到最显著的影响,表现为800~815 nm之间长波响应大幅度衰减,截止波长和峰值波长向短波移动,峰值响应和积分灵敏度减小,最终的光谱响应曲线变得平坦。阴极参量的计算结果反映铟封后阴极的表面逸出几率降低,说明铟封引起阴极表面激活层发生变化,使得能量较低的长波段光生电子不容易逸出,阴极长波响应和灵敏度随之降低。进一步分析了铟封过程中影响阴极表面激活层的因素。     

Effect of the nonlinearity of the CCD in Fourier transform profilometry on spectrum overlapping and measurement accuracy

In Fourier transform profilometry (FTP), we must restrain spectrum overlapping caused by the nonlinearity of the charge coupled device (CCD) and increase the measurement accuracy of the object shape. Firstly, the causes of producing higher-order spectrum components and inducing spectrum overlapping are analysed theoretically, and a simple physical explanation and analytical deduction are given. Secondly, aiming to suppress spectrum overlapping and improve measurement accuracy, the influence of spatial carrier frequency of projection grating on them is analysed. A method of increasing the spatial carrier frequency of projection grating to restrain or reduce the spectrum overlapping significantly is proposed. We then analyze the mechanism of how the spectrum overlapping is reduced. Finally, the simulation results and experimental measurements verify the correction of the proposed theory and method.