BaCuO2.5在高压下的状态方程与电学性质

 在活塞-圆筒式高压装置上研究了BaCuO_2.5在4.5 GPa内的p-V关系,给出了其状态方程、Grüneisen参数γ₀、零压体弹模量B₀以及B₀的压力导数B′₀。并在金刚石压砧装置（DAC）上测量了样品的电阻、电容随压力变化的关系,结果表明在0~20 GPa内没有发生相变。     

少节点基因调控网络的控制

近年来,自组织振荡网络受到越来越多科学家的关注,对生物体的生长、发育起调控作用的基因调控网络即是其中的一种.本文研究了少节点基因调控网络的控制问题.运用多相位超前驱动方法对该种网络进行调控,可以有效地提高对网络的控制效率.通过数值模拟,发现对于少节点基因调控网络,当系统参数确定时,网络的有效控制率可以达到95％以上(10节点网络);当系统参数不确定时,控制的效率也非常高.     

不同形式非线性薛定谔方程及其分步傅里叶法求解

讨论光通信中脉冲的准单色光光场的正负频表示,正负频形式的傅里叶变换,正负频形式的非线性薛定谔方程及它们之间的关系.尤其在脉冲频谱的求解问题中,如果采用负频形式的非线性薛定谔方程则必须选取负频形式的傅里叶变换;如果采用正频形式的非线性薛定谔方程则必须选取正频形式的傅里叶变换.采用分步傅里叶法对具体实例进行数值求解,验证了讨论结果.     

Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, x-ray diffraction （XRD） and Ftaman spectra, respectively. The nanocrystalline grains are averagely with 80hm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses （100） dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.     

核子-核子短程关联对x>1区域原子核结构函数的影响

利用Jastrow关联波函数,重新讨论了核子-核子短程关联对原子核结构函数的作用,发现在选用正确的单粒子能量和包括核子间短程对关联效应在内的核子动量密度分布以后,并不能解释原子核结果函数在x>1区域的实验数据.     

888 nm LD抽运Nd∶YVO4被动锁模皮秒振荡器

报道了基于888 nm半导体抽运Nd∶YVO4晶体连续被动锁模的皮秒振荡器。通过热激发抽运方式改善激光器的热性能,提高锁模振荡器输出的平均功率与单脉冲能量。利用半导体可饱和吸收体(SESAM)实现激光器锁模运转的启动与维持。在抽运功率为60 W时,获得最大输出功率为15 W,重复频率为53 MHz的皮秒脉冲输出,光-光转换效率为24%。在输出功率为15 W时脉冲宽度为45 ps。     

脉冲直流偏压增强的高质量立方氮化硼薄膜的合成

采用磁增强活性反应离子镀系统成功地合成了立方氮化硼薄膜.通过给基片施加脉冲直流偏压以代替传统的射频偏压,增强了立方氮化硼的成膜稳定性,研究了基片的直流脉冲偏压、等离子体放电电流、通入气体流量比(Ar/N₂)和基片温度沉积参数对立方氮化硼薄膜形成的影响规律.结果表明:随着基片负偏压和放电电流的增大,薄膜中立方氮化硼的纯度提高,当基片负偏压为155V,放电电流为15A时,可获得几乎单相的立方氮化硼薄膜.基片温度为500℃和Ar/N₂流量比为10时,最有利于立方氮化硼 关键词： 立方氮化硼 活性反应离子镀 脉冲偏压     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

一类具有欧拉形式的中立型微分方程的振动性

研究具有欧拉形式的无界时滞中立型微分方程解的振动性，给出了方程振动的几个充分条件。     

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.