A12o3钝化及其在晶硅太阳电池中的应用

介绍了A1203的材料性质及其原子层沉积制备方法,详细阐述了该材料的钝化机制（化学钝化和场效应钝化）,并从薄膜厚度、热稳定性及叠层钝化等角度阐释其优化方案．概述了Al203钝化在晶体硅太阳电池中的应用,主要包括钝化发射极及背面局部扩散电池和钝化发射极及背表面电池．最后,对A1203钝化工艺的未来研究方向和大规模的工业应用进行了展望．     

液相沉积法制备的二氧化硅薄膜及其钝化性能

采用液相沉积法在硅基底上成功制备了二氧化硅薄膜,利用扫描电子显微镜、光电子能谱和少子寿命测试仪等对二氧化硅薄膜的组织结构和钝化性能进行了研究,结果表明,液相生长的二氧化硅薄膜致密平整,含有少量的F元素;对硅具有较好的减反和钝化作用,平均反射率由28.87%降低至10.88%,表面复合速度由6 923 cm/s降低至2 830 cm/s。     

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al_2O_3 films

Chemical and field-effect passivation of atomic layer deposition （ALD） Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）, respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.