Structures,stabilities,and electronic properties of GaAs tubelike clusters and single-walled GaAs nanotubes

<正>The geometric structures,stabilities,and electronic properties of(GaAs)_n tubelike clusters at up to n=120 and single-walled GaAs nanotubes(GaAsNTs) were studied by density functional theory(DFT) calculations.A family of stable tubelike structures with a Ga-As alternating arrangement were observed when n≥8 and their structural units (four-membered rings and six-membered rings) obey the general developing formula.The average binding energies of the clusters show that the tubelike cluster with eight atoms in the cross section is the most stable cluster.The sizedependent properties of the frontier molecular orbital surfaces explain why the long and stable tubelike clusters can be obtained successfully.They also illustrate the reason why GaAsNTs can be synthesized experimentally.We also found that the single-walled GaAsNTs can be prepared by the proper assembly of tubelike clusters to form semiconductors with large band gaps.     

Bn-1Li(n=2~13)掺杂团簇的几何结构和电子性质

采用密度泛函理论(DFT)中的B3LYP方法得到了Bn-1Li (n=2~13)小团簇的平衡几何结构. 计算并分析了基态掺杂团簇的平均结合能、能量二阶差分、能级间隙、电离势、振动光谱和极化率. 结果表明：Li原子总是处于主团簇的外围以配位数最少的方式与主团簇结合,有的甚至是吸附在主团簇上面. 随着锂原子所占百分比的降低,掺杂团簇的稳定性迅速提高. 高浓度的掺杂(Li, B比为1：1或1：2)可以大幅度提高团簇的化学活性和金属性,但同时会降低其稳定性. B3Li和B5Li是幻数团簇.     

B$lt;sub$gt;$lt;i$gt;n$lt;/i$gt;$lt;/sub$gt;($lt;i$gt;n$lt;/i$gt;=2—15)团簇的几何结构和电子性质

应用密度泛函理论中的B3LYP方法计算并分析了不同生长模式下B_n（n=2—15）团簇的几何结构及电子性质. 同时,比较和讨论了不同生长模式下硼团簇的原子束缚能、能级间隙和第一电离势. 研究表明：直线构型稳定性最低,金属性较强,尤其在n=8时能隙仅有0.061 eV,说明该团簇已具有金属特征. 平面或准平面构型稳定性最高,非金属性强. 立体构型的稳定性与金属性介于直线和平面构型之间. 另外,还讨论了基态团簇的束缚能、能量二阶差分、能级间隙和第一电离势随团簇尺寸的变化,结果表明B₁₂与B₁₄是幻数团簇. 关键词： n团簇')" href="#">B_n团簇 密度泛函理论 几何结构 电子性质