在半导体-金属相变温度附近氧化钒薄膜光学性质的异常变动

在可见光—近红外波段的不同波长下,测量了半导体-金属相变过程中氧化钒薄膜样品的反射率和透射率.在薄膜相变过程中,不同波段的反射率曲线和透射率曲线表现出不同的变化趋势.利用非相干光在薄膜中的多级反射-透射模型,计算了相变过程中不同波长下氧化钒薄膜的折射率n和消光系数k随温度的变化.结果表明,在相变温度附近氧化钒薄膜光学性质的异常变动,其原因既有薄膜的折射率和消光系数随波长的变化趋势不同,也有在吸收性薄膜中存在探测光多次反射和透射的累加效应.     

Design and analysis of the tunnel connecting the beamcorridor and the spectrum hall of the CSNS

There is a tunnel connecting the beamcorridor and the target station in the spectrum hall in the CSNS project. The length of the tunnel is about 20 m. The shielding design of the tunnel is very significant for the persons working in the spectrum hall because the tunnel is not covered by soil for shielding. In order to reduce the dose rate at the exit of the cable ducts, we use the ISIS construction, which is designed with four turnings, as a reference for the tunnel design. The thickness of the shielding is obtained by a simulation with the Monte Carlo Code FLUKA. The result is compared with the data obtained with Moyer Mode and the reliability of the simulation is proved. This paper provides the basis for the design of the tunnel.     

Nb掺杂对还原性烧结的TiO2-δ陶瓷的晶体结构及热电性能的影响

利用传统的固相反应法在还原性气氛1200 ℃下分别制备出不同Nb掺杂量的Ti_1-xNb_xO_2-δ陶瓷样品.样品的粉末X射线衍射(XRD)结果显示:Nb掺杂量x较低时样品为多相混合,当Nb掺杂量x>0.02时样品为单一的四方相金红石型结构.在室温到900 K的测试温区,测试了单相样品(x=0.02,0.03,0.04)的电导率、Seebeck系数和热导率.测试 关键词： 氧化钛陶瓷 热电性能 氧空位     

偶氮苯介晶基元取向方式对其取向稳定性影响

根据取向透射率变化研究了偶氮苯侧链液晶聚合物在不同光照功率条件下的取向,用锥光干涉法表征了侧链介晶基元的取向方向,并研究了升温对取向膜的稳定性影响.实验结果表明介晶基元的取向速度和取向度都随光照时间和光照功率增加而增加;超过一定阈值功率(20 mW/cm2)时,随着光照时间延长薄膜的透射率(取向度)反而降低.高功率光照...     

Effects of Laser-Induced Heating on the Photoinduced Birefringence in Azobenzene-Side-Chain Copolymer

The photoinduced birefringence was observed in the polymer poly[2-(4-(4-cyanophenyl) diazenyl phenyloxy) ethoxyl methacrylate] with a cw 532nm laser. The az, obenz, ene polymer character has been studied under the con-ditions of various illuminating time and light intensities. By analysing the processes of reorientation, the egect of laser-induced heating has been introduced to the buildup of photoinduced birefringence in azobenzene-side-chain copolymer. The curves for the buildup of birefringence were fitted with a modified fimction, i.e., biexponential curves and Gaussian curves. The relationship among all the parameters has also been presented. With the modified fitting fimction, we obtain a better fitting result.     

准一维有机超导体(TMTSF)_2ClO_4的高精度温差电动势研究

测量了准一维有机超导体 (TMTSF) 2 ClO4 单晶a方向不同降温速率下的高精度温差电动势 (6— 2 80K) .高温下的温差电动势表现出线性行为 ,不能被正常的一维电子能带理论所解释 .在 2 4 0K左右观察到温差电动势斜率发生反常突变 .在 14 0K左右温差电动势向下逐渐偏离线性行为 ,这与 1D— 2D的维度渡越相关 .对阴离子有序—无序相变温度Ta(Ta=2 4K)附近的温差电动势结果与比热和电阻率的数据进行了比较 .对于极慢速降温的温差电动势 ,求导后可以看到相变的痕迹 .随着通过Ta 降温速率的增大 ,在Ta 之下的温差电动势数值出现了一个逐渐增大的整体抬高 .对此进行了讨论 .     

nA量级微电流测试仪的研发

光传感器是利用光敏元件将光信号转换为电信号的传感器，它的敏感波长在可见光波长附近，包括红外线波长和紫外线波长。光传感器不只局限于对光的探测，它还可以作为探测元件组成其它传感器，对许多非电量进行检测，只要将这些非电量转换为光信号的变化即可。光传感器是目前产量最多、应用最广的传感器之一，它在自动控制和非电量电测技术中占有非常重要的地位．     

Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering

Si-rich Sil-xCx/SiC multilayer thin films are prepared using magnetron sputtering, subsequently followed by thermal annealing in the range of 800-1200 ℃. The influences of annealing temperature （Ta） on the formation of Si and/or SiC nanocrystals （NCs） and on the electrical characteristics of the multilayer film are investigated by using a variety of analytical techniques, including X-ray diffraction （XRD）, Raman spectroscopy and Fourier transform infrared spectrometry （FT-IR）, current-voltage （I-V） technique, and capacitance-voltage （C-V） technique. XRD and Raman analyses indicate that Si NCs begin to form in samples for Ta _ 800 ~C. At annealing temperatures of 1000 ℃ or higher, the formation of Si NCs is accompanied by the formation of SiC NCs. With the increase in the annealing temperature, the shift of FT-IR Si-C bond absorption spectra toward a higher wave number along with the change of band shape can be explained by a Si-C transitional phase between the loss of substitutional carbon and the formation of SiC precipitates and a precursor for the growth of SiC crystalline. The C-V and I-V results indicate that the interface quality of Si1-xCx/SiC multilayer film is improved significantly and the leakage current is reduced rapidly for Ta ≥ 1000 ℃, which can be ascribed to the formation of Si and SiC NCs.     

OTS自组装单层膜诱导定向生长SrTiO3功能陶瓷薄膜

采用自组装单层膜技术,以三氯十八烷基硅烷(octadecyl-trichioro-silane,OTS)为模版,在玻璃基片上成功制备了钛酸锶晶态薄膜.改性基板的亲水性测定与金相显微镜测试表明,紫外光照射使基板由疏水转变为亲水,OTS单分子膜对薄膜的沉积具有诱导作用:X射线衍射(XRD)与扫描电镜(SEM)表征显示,制备成功的钛酸锶薄膜结晶良好,样品表面均匀,在垂直基板表面方向上呈花状生长:EDS能谱测试为钛酸锶薄膜的化学组成提供了有力的证据;同时探讨了白组装单层膜和钛酸锶薄膜的形成机理.     

Thermal stress cleaving of silicon wafer by pulsed Nd：YAG laser

The applied laser energy absorbed in a local area in laser thermal stress cleaving of brittle materials using a controlled fracture technique produces tensile thermal stress that causes the material to separate along the moving direction of the laser beam. The material separation is similar to crack extension, but the fracture growth is controllable. Using heat transfer theory, we establish a three-dimensional （3D） mathematical thermoelastic calculational model containing a pre-existing crack for a two-point pulsed Nd：YAG laser cleaving silicon wafer. The temperature field and thermal stress field in the silicon wafer are obtained by using the finite element method （FEM）. The distribution of the tensile stress and changes in stress intensity factor around the crack tip are analyzed during the pulse duration. Meanwhile, the mechanism of crack propagation is investigated by analyzing the development of the thermal stress field during the cleaving process.