SrTiO3/α-Fe2O3异质结光阳极光电转换性能

作为一类重要的光电极材料,α-Fe2O3在太阳能转化方面有着潜在的应用前景.但是,光生电子空穴对的再复合导致α-Fe2O3的光电量子产率很低.为了抑制光生电子空穴对的再复合,提高α-Fe2O3的光电量子产率,采用Spin-coating方法在透明导电玻璃FTO(SnO2:F)衬底上制备了SrTiO3/α-Fe2O3异质结薄膜光电极,并对该光电极进行了XRD、SEM、紫外-可见透射光谱的表征.在三电极光电化学测试系统中对薄膜的光电流-电压特性、入射光子电流转化效率(Incident photon to current efficiency,IPCE)对波长的依赖性进行了表征.在相同的Xe灯照射条件下,SrTiO3/α-Fe2O3异质结光电极的光电流及IPCE值大于单一的SrTiO3、α-Fe2O3各自的光电流及IPCE值,这与理论预测的结论一致.     

处理参数问题的思维路径

参数问题广泛地存在于高中数学的各类问题中，也是近几年来高考重点考查的热点问题之一．本文将介绍处理参数问题的几种主要方法．     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Transmission Properties of W3 Y-Branch Filters in Two-Dimensional Photonic Crystal Slabs

A highly efficient W3 Y-branch filter in a two-dimensional photonic crystal slab with triangular lattice of air holes is designed and fabricated, and its transmission properties are measured. By accurately adjusting the size of the resonant cavities, the minimum wavelength spacing of 7 nm between two channels is realized. The corresponding resonant wavelengths of the two cavities agree well with the calculated ones. This implies that this kind of fiIter may be promising in integrated wavelength division multiplexing system.     

无序二维约瑟夫森结阵列中磁场引起的涡旋玻璃态相变

采用电阻阻错结的无序二维约瑟夫森结阵列模型,数值研究超导薄膜中垂直磁场引起的涡旋运动.通过分析磁场激发产生的涡旋度Ne及低频电压噪声S₀的变化特性,得到如下结论：在无序超导体中固定温度不变,随着磁场的减弱涡旋液态经过准有序的布拉格相,涡旋玻璃相重新进入到低磁场下的钉扎稀磁液相. 由于在涡旋玻璃相中,电流驱动下的噪声值表现出一个峰,表明系统处于无序与有序相互竞争的亚稳态,并且临界电流应有峰值效应. 计算得到噪声值的变化与Okuma等得到的无序超导Mo_xSi_1-x膜实验现象一致,并能解释磁场降低引起的重新进入钉扎的稀磁液相行为. 关键词： 约瑟夫森结阵列 磁通玻璃 重新进入 峰值效应     

肼基硫代甲酸酯配合物的合成、晶体结构、光谱及三阶非线性光 学性质研究

报道三种有推拉电子基团的肼基硫代酸酯衍生物配体(HL^1^～^3)。此类配体与二价过渡金属离子配位时脱去一质子,形成D-M-D和A-M-A(D=给体,M=金属,A=受体)类型、含有共轭体系的中性配合物。本文集中研究了该类配体的镍、铜、钯、铂配合物的IR、磁化率、ESR谱,电子光谱和三阶非线性光学性质,通过光谱研究初步确定了它们均为平面正方形构型配合物,文中还报道了CuL2^1的晶体结构。晶体属P1空间群,a=0.7835(2),b=1.0530(2),c=1.1816(2)nm,α=100.61(3),β=92.38(3),γ=110.00(3)ⅲ,Z=1,最终的R因子为0.063。通过晶体结构测试,进一步确定铜配合物的结构为平面构型。     

甲氧苄啶分子印迹涂层搅拌棒在复杂样品痕量甲氧苄啶和磺胺药物分析中的应用(英文)

研制了甲氧苄啶分子印迹吸附萃取搅拌棒涂层,并应用于复杂样品中痕量甲氧苄啶和磺胺药物的分析。分子印迹涂层的厚度约为21.5μm,相对标准偏差为5.9%(n=10),涂层均匀、致密,具有良好的热稳定性和化学稳定性。分子印迹涂层的萃取容量是非印迹涂层萃取容量的1.7倍,分子印迹涂层对抗菌增效剂、磺胺药物、三嗪化合物和甲氨蝶呤都表现出良好的选择性吸附萃取能力。建立了分子印迹吸附萃取搅拌棒联用高效液相色谱的分析方法,成功应用于加标尿样和血浆中痕量甲氧苄啶的分析,线性范围为5～200μg/L,检出限为1.6μg/L,在尿样和血浆中的回收率范围分别为84.5%～91.7%和71.9%～85.1%,标准偏差分别为2.9%～4.4%和3.0%～7.3%。该方法还应用于加标牛奶中痕量磺胺药物的分析,线性范围为10～200μg/L,检出限在4.5～6.1μg/L之间,回收率为83.2%～110.2%,标准偏差为4.1%～8.0%.     

金属-有机框架HKUST-1膜在气体分离中研究进展※

发展高效、绿色且节能的物质分离与纯化技术具有重要意义, 气体分离更是在工业、能源、医疗及科技等领域有着广泛的应用. 传统的聚合物膜在实现高效气体分离方面还面临许多挑战, 新型分离膜材料的开发是当前研究热点和难点. 金属-有机框架(Metal-Organic Frameworks, MOFs)材料作为一种新兴多孔配位聚合物, 由于其具有独特可设计的拓扑结构以及可调节的功能而受到科学家们的广泛关注. 为了克服粉体或块体MOFs很难被高效用于气体分离的难题, 开发可用于分离的MOFs膜材料是一项具有重要意义且具有挑战性的任务. HKUST-1作为一种代表性的MOFs材料, 由于其结构稳定且原料经济并具有多级孔径的结构, 常被用作制备成膜材料用于气体分离的研究和实际应用. 总结了近十年HKUST-1膜的制备方法及其气体分离性能的研究进展, 并对这个方向的研究提出了自己的看法和展望.     

Dark blue erenkov second harmonic generation in the two-layer-stacked hexagonal periodically poled MgO:LiNbO_3s

We report the dark blue nonlinearˇCerenkov radiation by the second harmonic generation(SHG)in a two-layer-stacked hexagonal periodically-poled-MgO:LiNbO3s(PPMgOLNs).Based on the direct wafer bonding of two target PPMgOLNs rotating around the axis perpendicular to the plane with an angle of 30°,twelve bright spots as twice of those in a single PPMgOLN are shown at each second-harmonicˇCerenkov ring.The experimental results agree with the theoretical ones and present a promising application in the fabrication of three-dimensional(3D)PPMgOLNs.