LCOS大屏幕薄型背投电视广角投影物镜的设计

为了满足67英寸大屏幕LCOS背投电视的需要,设计了一款广角投影物镜.此广角投影镜头采用远心反远距结构,通过合理选用非球面和光学材料,设计的镜头具有视场大、投影距离短、工作距离长、相对孔径大、无渐晕、辐照度均匀等优点.在LCOS芯片奈奎斯特空间频率处的调制传递函数值高于0.5,色差仅约1/4像元,畸变低于5‰.     

一种具有噪声抑制功能的红外图像锐化算法

锐化是图像增强中一项关键性的技术,但如果图像中包含噪声,噪声也会因为锐化而放大,最终导致信噪比的降低.探索了一种算法既可以对图像进行锐化滤波,又不降低图像的信噪比.采用模式识别的相关理论,基于隶属度和概率松弛技术对红外图像中由真实边缘和由各种噪声引起的亮度数值变化进行区分,对不同区域采用不同的锐化处理.该算法不同于传统图像锐化算法只基于局部对比度的缺点,在图像锐化过程中考虑图像边缘和噪声的空间分布的差异,改善了传统边缘增强算法对噪声放大的缺点.实验数据表明,该锐化方法未引起信噪比的降低,具有良好的前景和实用价值.     

脉冲激光烧蚀碲镉汞材料的等离子体发射谱

脉冲激光辐照处于不同背景气压下的Hg0.8Cd0.2Te材料表面,用时间和空间分辨诊断技术探测了激光照射后产生的等离子体发射谱,根据所获得的飞行时间谱测量了等离子体中粒子的出射速度,结果表明粒子速度随着出射距离的增加迅速减小,且背景气压对出射速度有很大的影响,而激光能量对粒子速度的影响不大。另外根据谱线的展宽计算了等离子体中的电子密度,结果表明,电子密度在激光辐照样品后的短时间内迅速减小,且电子密度最大的位置不是出现在靶的表面而是在距表面一定距离处。     

"金属电子逸出功测定"实验数据处理的新方法

介绍了使用EXCEL2000软件中的三个函数,处理“金属电子逸出功的测定”实验数据的新方法,所得数据准确可靠。     

磺化紫草色素对羊毛织物染色性能的优化研究

本文研究了从紫草中提取紫草色素、磺化紫草染色工艺的优化以及环境友好媒染剂对染色性能的影响结果表明,在乙醇和正己烷提取紫草色素的基础上,通过磺化处理获得二种染料A和染料B.通过二次通用旋转组合设计,得出羊毛织物的优化染色工艺:染料A:pH 3.8,87℃以及53 min;染料B:pH4.3,94℃和60 min.在相同的染色条件下,染料A的比染料B的染色深度高.采用Al3+、Mg2+、Fe2+、Fe3+等媒染剂进行后媒处理,证明媒染剂对染料B的效果更明显.另外,对于染料A和染料B染色羊毛织物,Fe3+对K/S值以及彩度具有更明显的作用.     

基于灰度投影改进的电子稳像

针对灰度投影算法运用于存在局部运动目标的情况下,稳像效果较差并且可能产生错稳这一问题,在分析灰度投影基本理论的基础上,提出一种改进的灰度投影算法:局部运动物体位置估计方法和像素替代法。利用灰度值的改变和像素替代的方法,把局部运动物体去除,再进行稳像处理。通过实验验证,该方法可以解决图像中存在运动物体时发生的错稳情况。比较改进前与改进后的稳像效果,改进后的PSRN（峰值信噪比）提高了1.35。     

带有全铰节点的三维杆系结构静力分析的回传波射矩阵法研究

推导出含有全铰节点的三维杆系结构的回传波射矩阵表达式,完善了具有任意连接和约束的空间杆系结构静力分析的回传波矩阵法.基于节点平衡方程和协调方程,推导出表达杆件近端位移和远端位移关系的传递分配矩阵及载荷源向量,并通过由对偶坐标系下近端位移和远端位移的关系获得结构的总体相位矩阵,再引入转列矩阵,进而推导出结构的回传波射矩阵,在此基础上求解以杆端位移为基本未知量的线性方程组,最终得到精确确定所有杆件的杆端位移及杆端内力的矩阵列式.给出了空间杆系结构算例分析,与有限元结果比较,验证了回传波射矩阵法的计算精度.     

Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model

In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.     

Surface modification of polytetrafluoroethylene film using single liquid electrode atmospheric- pressure glow discharge

Polytetrafluoroethylene films are treated by room temperature helium atmospheric pressure plasma plumes, which are generated with a home-made single liquid electrode plasma device. After plasma treatment, the water contact angle of polytetrafluoroethylene film drops from 114°to 46°and the surface free energy increases from 22.0 mJ/m2 to 59.1 mJ/m2. The optical emission spectrum indicates that there are reactive species such as O2+ , O and He in the plasma plume. After plasma treatment, a highly crosslinking structure is formed on the film surface and the oxygen element is incorporated into the film surface in the forms of -C-O-C-, -C=O, and -O-C=O groups. Over a period of 10 days, the contact angle of the treated film is recovered by only about 10 , which indicates that the plasma surface modification is stable with time.     

Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors

This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances.