High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre

A high efficiency and broad bandwidth grating coupler between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre is designed and fabricated. Coupling efficiencies of 46\% and 25\% at a wavelength of 1.55~μ m are achieved by simulation and experiment, respectively. An optical 3~dB bandwidth of 45~nm from 1530~nm to 1575~nm is also obtained in experiment. Numerical calculation shows that a tolerance to fabrication error of 10~nm in etch depth is achievable. The measurement results indicate that the alignment error of ±2~μ m results in less than 1~dB additional coupling loss.     

硅基光子集成研究进展

报道了国际上关于硅基光子集成的最新研究进展和本课题组在该领域的研究成果,包括对一些光收发模块、III-V族/硅基激光器等集成器件的结构改进和工艺的探索,展示了兼容互补金属氧化物半导体工艺的硅基光子集成在信息技术领域中的巨大前景.可以预见,硅基光子集成已成为硅光子学的主要研究内容,硅光子学及硅基光子集成的发展目标是趋向更高速率、更低功耗及更大集成密度.     

第六届全国红外科学技术交流会在洛阳市举行

第六届全国红外科学技术交流会于一九八四年十一月二日至七日在河南省洛阳市举行,由中国光学学会与中国电子学会、中国宇航学会联合主办。参加会议的有来自63个单位的代表132人。本届会议的中心议题是红外探测系统及其应用,大会特邀报告五篇和分组交流论文八十四篇,内容涉及跟踪制导和热成象、遥感以及测温等技术。《红外研究》杂志专为这次会议出版了论文摘要选辑(1985,No.2)。     

可变增益放大器在脉冲振幅调制式藻类光合活性荧光测量中的应用

微弱信号探测中信号幅度很宽会导致幅度小的信号分辨率低,结合脉冲振幅调制叶绿素光合活性荧光仪中不同强度光源激发下光电倍增管光电流响应,采用多路选择开关D5201G芯片选择I/V转换电路中不同阻值的反馈电阻实现了对输入信号可变增益放大.0～118mV以下输入信号的理论增益值最高可达28.25 dB,同时输入信号的电压幅值最...     

Effects of interface kinetics and anisotropy on the stability of the growing crystal face and dissolution face during crystallization from solution under microgravity

The stability of the shapes of the growing crystal face and dissolution face in a two-dimensional mathematical model of crystal growth from solution under microgravity is studied. Effects of the interface kinetics and anisotropy of crystallization and dissolution on the stability are also studied. It is proved that the stable shapes of crystal growth face and dissolution face do exist, which are of suitably shaped curves with their upper parts inclined backward properly no matter whether the interface kinetics and the anisotropy are taken into account or not. The stable shapes of the growing crystal faces and dissolution faces are calculated for various cases. The interface kinetics will make the inclination degree of stable crystal growth face reduce and that of stable dissolution face reduce slightly. The anisotropy of crystallization and dissolution may make the inclination degree of stable-growing crystal face smaller or larger, and that of the stable dissolution face varies very slightly.     

Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.     

聚氯乙烯—吡啶树脂的合成及其催化水解反应的研究

在浓氧氢氧化钠作用下，聚氯乙烯与吡啶作用与制成聚氯乙烯－吡啶树脂，测定了其元素组成和红外光谱，并考察了其在酯水解反就听催化活性。     

劳动和社会保障办公系统的开发与应用

采用Lotus Domino/Notes文档数据库 Oracle关系数据库的独特结构模式,集成了Microsoft Office Outlook系统软件,主要功能通过浏览器/服务器(B/S)方式实现,系统设计采用了组件化、模块化的思想,为工作流程的定制和公文流转过程的控制提供了强大功能.     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.