高精度多探头磁场测量系统

兰州重离子研究装置的磁场测量系统已于1983年10月建立. 多探头长臂上装有94个霍尔片. 测磁支架采用长臂、动环和定环组成的以加速器几何中心为原点的极坐系结构. 由小型计算机承担自动控制和数据的获取与处理工作. 对16KG磁场, 本系统的测量重复性好于±5×10^－5, 测量精确度估计为±1×10^－4. 测量速度约为每分钟188个数据.     

验证辐射强度与距离平方反比率的实验

利用Nal闪烁谱仪测量了在探测器与放射源间某个距离下对应的计数率.对测量的数据分别利用等精度最小二乘法和未知参数逼近法进行了处理,观察到在某些未知参数下,最小二乘法引起的误差很大,利用未知参数逼近法得到的值能和真实值较好接近,从而验证了辐射强度与距离平方反比率.     

Effects of interface kinetics and anisotropy on the stability of the growing crystal face and dissolution face during crystallization from solution under microgravity

The stability of the shapes of the growing crystal face and dissolution face in a two-dimensional mathematical model of crystal growth from solution under microgravity is studied. Effects of the interface kinetics and anisotropy of crystallization and dissolution on the stability are also studied. It is proved that the stable shapes of crystal growth face and dissolution face do exist, which are of suitably shaped curves with their upper parts inclined backward properly no matter whether the interface kinetics and the anisotropy are taken into account or not. The stable shapes of the growing crystal faces and dissolution faces are calculated for various cases. The interface kinetics will make the inclination degree of stable crystal growth face reduce and that of stable dissolution face reduce slightly. The anisotropy of crystallization and dissolution may make the inclination degree of stable-growing crystal face smaller or larger, and that of the stable dissolution face varies very slightly.     

Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.     

一种低运算量GNSS接收机快速捕获方法

为了减少捕获阶段占用的时间与功耗,提出了一种低运算量的快速捕获方法。首先选取伪码周期整数倍数据进行二维重排,利用降采样理论对每个数据横块混叠;其次通过竖块FFT运算实现频率补偿以增强叠加信号的信噪比,使用横块FFT运算细化多普勒频移分辨率并得到特定的伪码相位筐,搜索特定筐内伪码相位的最大相关值。最后得到确切的伪码相位与多普勒频移。实际数据仿真结果表明,降采样因子与数据块个数取2时,所提方法运算效率是基于FFT捕获方法的4.1倍,基于SFT捕获方法的1.7倍,运算效率随降采样因子与数据块个数增大显著提升,能更好满足接收机的性能要求。     

聚氯乙烯—吡啶树脂的合成及其催化水解反应的研究

在浓氧氢氧化钠作用下，聚氯乙烯与吡啶作用与制成聚氯乙烯－吡啶树脂，测定了其元素组成和红外光谱，并考察了其在酯水解反就听催化活性。     

关于“拉特马吼级数表示的函数”一文中一个定理的简单证明和推广

王斯雷在[1]中建立了下述定理1。但是他的证明似乎太长,本文指出,这个定理只需用初等微积分的方法就可以很简单地证明出来。用新证明的类似方法我们还可以得到定理2及定理3。定理2将原定理中F(x)连续的条件减弱为近似连续,定理3又在定理2的基础上把定理1进一步推广。定理1.设F(x)是[0,1]上的连续函数,级数     

劳动和社会保障办公系统的开发与应用

采用Lotus Domino/Notes文档数据库 Oracle关系数据库的独特结构模式,集成了Microsoft Office Outlook系统软件,主要功能通过浏览器/服务器(B/S)方式实现,系统设计采用了组件化、模块化的思想,为工作流程的定制和公文流转过程的控制提供了强大功能.     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.