基于准分形结构的具有二次谐波抑制作用的小型化高温超导滤波器的研究(英文)

为了抑制平面带通滤波器的二次谐波,实现高温超导滤波器的小型化,本文提出了两种新型的准分形结构谐振器,并分别将其应用到微带滤波器的设计与仿真之中.第一种谐振器由希尔伯特分形结构改变而来,由于其相对紧凑度更高,并且保留希尔伯特分形结构的基本性质,因此仿真结果不仅具有更好的二次谐波抑制效果还有更小的体积优势.第二种谐振器由Minkowski分形结构改变而来,基于此谐振器设计了一款八阶带通滤波器,仿真及测试结果表明:基于此谐振器所设计滤波器与传统的微带滤波器相比,二次谐波被推迟了1.5GHz左右,并且体积减小约三分之一.结果证明两种滤波器均具有良好的二次谐波抑制效果和小型化的优势.     

数学中的逆向思维方法

数学中的逆向思维方法何明（成都师范学校６１００４１）逆向思维是指根据一种观念（概念、原理、思想）、方法及研究对象的特点，从它的相反或否定的方面去进行思考，以产生新的观念，在学习和研究数学的过程中，有机地、适当地注意从所考察的数学问题的相反方面或否定方...     

加速器质谱法测定环境和生物样品中的129I

建立了环境和生物样品中的129I的分析方法,采用碱式灰化、萃取-反萃、沉淀等步骤对环境和生物样品中的碘进行预浓集,用131I[NaI] 为放射性示踪剂优化各分步的制备条件,运用加速器质谱法测定了北京地区松针和干草、青岛地区海藻和海水中的129I/127I.用超热中子活化法测定样品中的稳定碘(即127I)含量.上述松针、干草、海藻和海水样品中的129I/127I分别为8.11×10-9、5.97×10-9、1.70×10-10和6.05×10-10;相应的129I浓度分别为3.22×10-15、1.24×10-14、1.27×10-14 g/g干重和2.30×10-14 g/L.与文献报道值相比,我国与国外同类地区相当甚至更低,比法国和英国乏核燃料后处理厂附近环境中的129I低2～3个数量级,表明我国这些非核设施影响地区的129I处于当今全球环境的本底放射性沉降水平.     

氯离子介导的白藜芦醇对心肌细胞缺氧复氧损伤保护作用

以H9c2心肌细胞缺氧/复氧(A/R)损伤为模型,从细胞水平探讨白藜芦醇抗心肌急性损伤作用与细胞内Cl-变化的关系,以进一步阐明白藜芦醇的心肌保护作用机制.实验结果显示白藜芦醇能有效减轻A/R对心肌细胞的损害,表现为乳酸脱氢酶(LDH)、肌酸磷酸激酶(CPK)活性降低,超氧化物歧化酶(SOD)、谷胱苷肽过氧化物酶(GSH-Px)的抗氧化活性升高和脂质过氧化产物丙二醛(MDA)含量减少,细胞存活率明显升高;MQAE荧光分光光度计法测定心肌细胞内Cl-浓度,发现白藜芦醇亦能显著延缓A/R引起的心肌细胞内Cl-浓度的升高.白藜芦醇对Cl-浓度动态平衡的调节在其心肌保护作用中发挥重要作用.     

Erratum to“Fabrication of Tl2Ba2CaCu2O8 superconducting films without thallium pellets

The rocking curve of Tl-2212 thin films in Fig.2 of our original paper[1]should be replaced with the following new one.Accordingly,in the fifth paragraph of Section 3 of the original paper,the statement“The full width at half maximum(FWHM)of the(0012)peak of the Tl-2212 phase is about 0.24°”should be“The full width at half maximum(FWHM)of the(0012)peak of the Tl-2212 phase is about 0.42°”.     

Formation of epitaxial Tl_2Ba_2Ca_2Cu_3O_(10) superconducting films by dc-magnetron sputtering and triple post-annealing method

For obtaining pure phase T12Ba2Ca2Cu3O10 （T1-2223） films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, T12Ba2CaCu2O8 （T1-2212） is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared T1-2212 inter-phase is converted into T1-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of T1-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction （XRD） θ-2θ scans, 09 scans and rotational φ scans show that each of the T1-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy （SEM）. The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.     

Measurement of the half-life of ~(79)Se with accelerator mass spectrometry

The accelerator mass spectrometry(AMS) is an effective method for the determination of the half-life of long-lived radionuclides. In this paper, we report a method for measurement of the half-life of79 Se. The number of79 Se atoms was determined from measured79Se/Se absolute ratios with the AMS system at the China Institute of Atomic Energy and the decay rate of79 Se was determined by counting the emitted β-rays with a liquid scintillation spectrometer. The major improvements of our measurements include using the high abundance of an79 Se sample which was cooled for many years to exclude the interference of short-lived nuclides, the extraction of SeO-2molecular ions, that results in a suppression of the79 Br background by as much as about five orders of magnitude. Also, an AMS measurement of the absolute ratio of79Se/Se was developed to avoid systematic errors. The results show that79Se/Se is(2.35±0.12)×10-7in the reference sample and the radioactivity of79 Se is(1.24±0.05) Bq/g, so the half-life of79 Se is(2.78±0.18)×105a.     

多靶强流铯溅射离子源的研制

多靶强流铯溅射离子源是多种加速器中常用的离子源之一,在科学研究和工业生产领域的应用十分广泛。但是,目前商业化应用的该种离子源由欧美几个国家垄断,国内还没有厂家能够生产。为了提高加速器运行和建造中的自主化水平,研制了一种多靶强流铯溅射离子源。该离子源主要由离子源腔、换靶装置、冷却系统、控制箱等组成,根据功能需求对其关键部件进行结构设计,采用了全新的伺服电机驱动换靶方式,提供靶位微调功能和远程控制模式,并使用Opera-3D软件模拟优化结构参数和束流光路。经过测试,该离子源在中国原子能科学研究院的400 kV小型加速器质谱(AMS)装置上应用情况良好,换靶定位精准,供束稳定,束流参数达到进口离子源的参数指标,实现了预期目标。     

A novel thin drift region device with field limiting rings in substrate

A novel thin drift region device with heavily doped N⁺ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS). In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.     

2英寸双面Tl-2212超导薄膜

我们采用磁控离子溅射和后热处理的方法,在LaAlO3(001)单晶衬底上制作了2英寸直径的双面Tl-2212超导薄膜.薄膜的表面均匀,结构致密.X-光θ-2θ测试表明,薄膜具有很纯的Tl-2212超导相,并具有c-轴垂直于膜面的织构.电磁测试结果表明,薄膜的超导电性均匀,临界温度Tc大于100K,临界电流密度Jc(77K,0T)约1×106A/cm2, 微波表面电阻Rs(77K,10GHz)约0.5mΩ.