Modulation of electroencephalograph activity by manual acupuncture stimulation in healthy subjects:An autoregressive spectral analysis

To investigate whether and how manual acupuncture(MA) modulates brain activities,we design an experiment where acupuncture at acupoint ST36 of the right leg is used to obtain electroencephalograph(EEG) signals in healthy subjects.We adopt the autoregressive(AR) Burg method to estimate the power spectrum of EEG signals and analyze the relative powers in delta(0 Hz-4 Hz),theta(4 Hz-8 Hz),alpha(8 Hz-13 Hz),and beta(13 Hz-30 Hz) bands.Our results show that MA at ST36 can significantly increase the EEG slow wave relative power(delta band) and reduce the fast wave relative powers(alpha and beta bands),while there are no statistical differences in theta band relative power between different acupuncture states.In order to quantify the ratio of slow to fast wave EEG activity,we compute the power ratio index.It is found that the MA can significantly increase the power ratio index,especially in frontal and central lobes.All the results highlight the modulation of brain activities with MA and may provide potential help for the clinical use of acupuncture.The proposed quantitative method of acupuncture signals may be further used to make MA more standardized.     

Effect of fused silica subsurface defect site density on light intensification

The effect of defect density on the modulation of incident laser waves is investigated. First, based on the actual defect distribution in the subsurface of fused silica, a three-dimensional (3D) grid model of defect sites is constructed. The 3D finite-difference time-domain method is developed to solve the Maxwell equations. Then the electrical field intensity in the vicinity of the defect sites in the subsurface of fused silica is numerically calculated. The relationships between the maximal electrical field intensity in fused silica and the geometry of the defect sites are given. The simulated results reveal that the modulation becomes more remarkable with an increase of the defect density. In addition, the effect of the distribution mode of defects on modulation is discussed. Meanwhile, the underlying physical mechanism is analyzed in detail.     

Role of chelating agent in chemical and fluorescent properties of SnO2 nanoparticles

A modified polyacrylamide gel route is applied to synthesize SnO2 nanoparticles. High-quality SnO2 nanoparticles with a uniform size are prepared using different chelating agents. The average particle size of the samples is found to depend on the choice of the chelating agent. The photoluminescence spectrum detected at λex = 230 nm shows a new peak located at 740 nm due to the surface defect level distributed at the nanoparticle boundaries.     

热丝辅助双偏压氢等离子体制造金刚石锥状表面研究

利用热丝辅助双偏压氢等离子体对化学气相沉积金刚石薄膜进行了纳米尺度上的表面改装,制造出锥状金刚石列阵.金刚石薄膜内在的柱状结构使氢离子在刻蚀薄膜时产生非均匀的刻蚀速率,对锥状表面的形成起着重要作用.另一方面,溅射出的含碳粒子会发生二次沉积,最终的特征表面形貌取决于刻蚀与含碳基团再沉积之间的相互竞争.栅极的使用影响基底区域放电的伏安特性,改变栅极电流可以对形成的金刚石特征表面结构进行有效调节.在处理过程中少量掺入甲烷,提高了金刚石表面附近的含碳基团浓度,促进二次成核,进而诱发均匀分布的锥状列阵. 关键词： 等离子体 表面 金刚石薄膜     

盐酸氯丙嗪1H NMR、 13C NMR谱的归属及结构表征

通过运用¹H-¹H COSY(¹H-¹H COrrelation SpectroscopY)、TOCSY(TOtal Correlation SpectroscopY)、HSQC(Heteronuclear Single Quantum Correlation)、HMBC (Heteronuclear Multiple Bond Correlation)、NOESY(Nuclear Overhauser Enhancement SpectroscopY)等多种二维核磁技术,对盐酸氯丙嗪（Chlorpromazine hydrochloride CPZ· HCl）在CDCl₃、CD₃COCD₃和D₂O三种溶剂中的¹H、¹³C NMR谱进行了准确归属（重点集中于谱峰重叠程度较高的芳香族区域）．实验表明：杂环上N与苯环存在部分共轭;在CDCl₃、CD₃COCD₃中,侧链卷曲至芳环上方处于屏蔽区,且侧链上N为较稳定的四面体构型;比较了CPZ· HCl在不同溶剂与浓度下的¹H NMR谱的变化,对文献中其核磁共振谱（特别是芳香区的谱峰）归属的争议作了解释．量子化学计算结果与实验结果相吻合．     

生长温度和结构参数对InGaAs／GaAs量子阱光学特性的影响

研究了不同生长温度下制备的In0.15Ga0.85As/GaAs应变量子阱的PL谱,结果表明,生长温度越高,In偏析和In-Ga互混越严重,同时,导致更多的In脱附,PL谱发光峰蓝移。对不同In含量的和不同InGaAs厚度的InGaAs/GaAs量子阱进行PL谱测试,分析表明In含量<0.2,生长温度低于560℃时,In含量和InGaAs层量子阱的厚度对In偏析、脱附和In-Ga互混基本没有影响。     

溶胶-凝胶SiO2薄膜氨热两步后处理

 以正硅酸乙酯为前驱体,氨水作催化剂,采用溶胶-凝胶法提拉镀制SiO₂双面膜,对薄膜进行氨处理和热处理。采用椭偏仪、分光光度计、红外光谱、扫描探针显微镜、静滴接触角测量仪表征薄膜的特性。研究表明：经氨热两步后处理,膜厚持续减小,折射率经氨处理先增大了0.236,再经热处理又减小了0.202,膜层透光性变好,透过率峰值持续向短波方向移动;经两步后处理的膜面平整度明显变好,与水的接触角先增大到58.92°后减小到38.07°。     

First-principles investigation on ideal strength of B2 NiAl and NiTi alloys

For B2 NiAl and NiTi intermetallic compounds, the ideal stress–strain image is lack from the perspective of elastic constants. We use first-principles calculation to investigate the ideal strength and elastic behavior under the tensile and shear loads. The relation between the ideal strength and elastic constants is found. The uniaxial tension of NiAl and NiTi along <001> crystal direction leads to the change from tetragonal path to orthogonal path, which is driven by the vanishing of the shear constant C(66). The shear failure under {110}{111} shear deformation occurring in process of tension may result in a small ideal tensile strength(~ 2 GPa) for NiTi. The unlikeness in the ideal strength of Ni Al and Ni Ti alloys is discussed based on the charge density difference.