Lower Bounds on Negative Energy Densities for the Scalar Field in Flat Spacetime

We obtain a lower bound on the spacetime-weighted average of the energy density for the scalar field in four-dimensional flat spacetime. The bound takes the form of a quantum inequality. The inequality does not rely on the quantum state and its form is only related to the weights, namely the spacetime sampling functions which are assumed to be smooth, positive and compactly supported. It is found that the inequality is just equal to the temporal quantum energy inequality. When the characteristic length of the temporal sampling function tends to zero, the lower bound becomes divergent. This is consistent with the fact that the spatial restriction on negative energy density does not exist in four-dimensional spacetime.     

Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性

在溶胶-凝胶工艺获得高质量Bi₄Ti₃O₁₂薄膜的基础上 ，制备了Ag/Bi₄Ti₃O₁₂栅n沟道铁电场效应晶体管. 研 究了Si基Bi₄Ti₃O₁₂薄膜的生长特性及其对铁电薄膜/ 硅的界面状态和铁电场效应晶体管存储特性的影响. 研究表明，在合理的工艺条件下可以获 得具有较高c-轴择优取向的纯钙钛矿相Si基Bi₄Ti₃O₁₂ 铁电薄膜并有利于改善Bi₄Ti₃O₁₂/Si之间的界面特性; 顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力; 器件的转移(I< sub>sd}-V_G)特性曲线显示Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有明显的栅极化调制效应. 关键词： 铁电场效应晶体管 4}Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 存储 特性 溶胶-凝胶工艺     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi3.25La0.75Ti3O12铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi3.25La0.75Ti3O12薄膜未能充分晶化,晶粒细小且有非晶团聚,介电与铁电性能均较差.高于550℃退火处理的Bi3.25La0.75Ti3O12薄膜表面平整无裂纹,晶粒均匀,无焦碌石相或其他杂相,薄膜为多晶生长,具有较好的介电与铁电性能,4V电压下的漏电流密度低于2×10-8A/cm2.随退火温度升高,晶化程度的提升和晶粒尺寸的增大使薄膜的剩余极化增大而矫顽电场降低.600℃退火处理的Bi3.25La0.75Ti3O12薄膜显示了优于Bi4Ti3O12薄膜的铁电性能,其剩余极化Pr和矫顽电场Ec分别达到17.5μC/cm2和102kV/cm.     

用推广的Viola-Seaborg公式计算α衰变寿命

根据Audi等编评的最新核数据表, 对Z≥84, N≥128的核的α衰变实验寿命用Viola-Seaborg公式进行最小方差拟合, 得到一套新参数. 用新拟合参数计算的偶偶核的衰变寿命与实验寿命很好地符合, 平均偏差1.3倍.而对奇A和奇奇核理论寿命与实验寿命相差较远. 考虑到处于基态时奇A和奇奇核与偶偶核的主要区别在于自旋和宇称, 对Viola-Seaborg公式做了推广. 在公式中引入了离心势垒(即α粒子轨道角动量)对衰变寿命的影响. 由推广公式计算的奇A和奇奇核的寿命与实验寿命平均偏差2.5倍,最大偏差5—6倍.     

逃逸时间法生成M集中控制变量B的确定

逃逸时间算法是生成Mandelbrot集(简称M集)最常用的算法,本文针对非线性复映射f(z)=zm c为迭代函数的情形进行讨论.首先,根据逃逸时间算法的基本原理给出相应的算法步骤;然后,对迭代函数f(z)=zm c进行了详细研究,从而合理地确定了算法中需要控制的变量B(参数值c0的取值范围)的取值,这样就大大地减少了迭代次数,从而提高了算法的运算效率.     

解线性代数方程组的新型二次PEk方法

1引言在电离层动力学和飞行器设计等工程领域,经常遇到具有周期边界条件的椭圆型或抛物型偏微分方程的求解问题．通过适当的离散逼近,此类问题可以转化为大型块状三对角线性方程组的求解问题．1977年,William S．Helliwell提出了一种(Pseudo- Elimination)方法来求解系数矩阵为块状三对角矩阵的线性代数方程组,这种方法具有迭代收敛快及存贮量少等优点．胡家赣等在系数矩阵为对称正定矩阵和对角优势L-矩阵的情况下证明了一次PE方法和一次PE_k方法的收敛性,指出了一次PE方法比     

Exponentially tapered multi-mode interference couplers

Optical couplers are important components in photonic integrated circuits. The multi-mode interference (MMI) coupler is a good candidate because of its bandwidth, polarization properties, and manufacturing tolerances. A MMI coupler with the exponentially tapered multi-mode waveguide is proposed in order to reduce the scale of the MMI device. Compared with parabolically tapered structure which has been successfully used in the MMI devices, this structure can further reduce the length of devices. Simulation results by the beam propagation method for MMI couplers are given. The effectiveness of this structure for reducing MMI device length is proved.     

Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM

We investigate SrBi2 Ta2 O9 （SBT） films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first layer of SBT, as promising ferroelectric layer materials applied to ferroelectric random access memory （FeRAM）. All the specimens in this experiment have similar SBT crystal orientations of （115）, （020）, （220）, and （135）. The Pt/SBT/Pt capacitor with coating of 3000rpm spin rate has a perfect rectangle shape of hysteresis loops, remanent polarization of 7.571μC/cm^2 and coercive voltage of 0.816 V at 5 V voltage amplitude. These characteristics are better than those with coating of 3500rpm spin rate, which is attributed to the influence for thickness and grain size of the film from depressed spin rate. Slow-rate anneal in the furnace for the first layer of SBT can improve the crystallization processes and properties for SBT layers slightly, compared with rapid thermal annealing. The ion damage from etching for the top electrode can influence leakage current characteristics of the Pt/SBT/Pt capacitor at positive voltage bias.     

BIVARIATE ESTIMATION WITH LEFT-TRUNCATED DATA

1. Introductionffendomly truncated data frequently arise in medical studies; other application areas include economics, insurance and astronomy in a broad senses random truncation correspondsto biased sampling, where only partial or incomplete data are aVailable about the variableof interest. A typical realization. can occur as follows: Suppose that individuals/items experience tWO consecutive events in time, an initiating eveal at t and a terminating eveal ats. Usuajly, statistical niterest …     

Ce-5％La合金在空气中的表面氧化过程

采用拉曼光谱原位分析、扫描探针显微镜、扫描电镜和X射线能谱研究了Ce-5％（质量分数）La合金在空气中的氧化过程。