Intrinsic tunneling study of underdoped Bi2Sr2-xLaxCuO6+δ superconductors

We report on a tunneling study of underdoped submicron Bi₂Sr_2-xLa_xCuO_6+δ (La-Bi2201) intrinsic Josephson junctions (IJJs), whose self-heating is sufficiently suppressed. The tunneling spectra are measured from 4.2 K up to the pseudogap opening temperature of T^* = 260 K. The gap value found from the spectral peak position is about 35 meV and has a weak temperature dependence both below and above the superconducting transition temperature of T_c = 29 K. Since the superconducting gap should have a value of 10-15 meV, our results indicate that the pseudogap (～35 meV) plays an important role in the underdoped La-Bi2201 intrinsic tunneling spectroscopy down to the lowest temperature of 4.2 K. However, the contribution of the superconducting gap can be separated by normalizing the spectra to the one near and above T_c, which shows that the IJJs can be a useful tool for the study of the electronic properties of the La-Bi2201 cuprate superconductors.     

Increasing energy relaxation time of superconducting qubits with nonmagnetic infrared filter and shield

One of the primary origins of the energy relaxation in superconducting qubits is the quasiparticle loss. The quasiparticles can be excited remarkably by infrared radiation. In order to minimize the density of quasiparticle and increase the qubit relaxation time, we design and fabricate the infrared filter and shield for superconducting qubits. In comparison with previous filters and shields, a nonmagnetic dielectric is used as the infrared absorbing material, greatly suppressing the background magnetic fluctuations. The filters can be made to impedance-match with other microwave devices. Using the as-fabricated infrared filter and shield, we increased the relaxation time of a transmon qubit from 519 ns to 1125 ns.     

Fabrication of Al/AlO_x/Al junctions using pre-exposure technique at 30-keV e-beam voltage

We fabricate high-quality A1/A1O_x/A1 junctions using improved bridge and bridge-free techniques at 30-keV e-beam voltage,in which the length of undercut and the size of junction can be well controlled by the pre-exposure technique.The dose window is 5 times as large as that used in the usual Dolan bridge technique,making this technique much more robust.Similar results,comparable with those achieved using a 100-keV e-beam writer,are obtained,which indicate that the 30-keV e-beam writer could be an economic choice for the superconducting qubit fabrication.     

Demonstration of superadiabatic population transfer in superconducting qubit

We implemented the superadiabatic population transfer within the nonadiabatic regime in a two-level superconducting qubit system. To realize the superadiabatic procedure, we added an additional term in the Hamiltonian, introducing an auxiliary counter-diabatic field to cancel the nonadiabatic contribution in the evolution. Based on the superadiabatic procedure, we further demonstrated quantum Phase and NOT gates. These operations, which possess both of the fast and robust features, are promising for quantum information processing.     

High quality factor superconducting coplanar waveguide fabricated with TiN

We fabricated TiN coplanar waveguides using standard lithography techniques followed by ICP etch. In order to achieve high quality factor, we investigated the film growth by choosing different deposition conditions for various substrates. Quality factors of waveguide resonators were measured at 20 mK in both high and low microwave power limits. An inner quality factor of several million was achieved at high power limit for a predominantly(200)-oriented TiN film which was grown on HF cleaned silicon wafer. A quality factor of larger than one million was achieved at high power limit for TiN film grown on sapphire.     

Bridge-free fabrication process for Al/AlO_x/Al Josephson junctions

We fabricate different-sized Al/AlO_x/Al Josephson junctions by using a simple bridge-free technique, in which only single-layer E-beam resist polymethyl methacrylate(PMMA) is exposed at low accelerate voltage(below 30 kV) and the size of junction can be varied in a large range. Compared with the bridge technique, this fabrication process is very robust because it can avoid collapsing the bridge during fabrication. This makes the bridge-free technique more popular to meet different requirements for Josephson junction devices especially for superconducting quantum bits.     

新型可溶性偶氮聚酰亚胺及其作为液晶光定向层应用的初步研究

以 4 ,4′ 二 (1,2 苯二酸酐 4 羧酸酯 )偶氮苯为二酐单体 ,4 十六烷氧基 4′ ,4″ 二氨基三苯甲烷为二胺单体 ,通过缩聚反应合成了可溶性偶氮聚酰亚胺 .采用红外光谱、氢核磁共振、紫外光谱和热分析等手段 ,对产物的结构、热性能及光学性能等进行了表征 .在紫外光辐照下 ,上述聚合物表现出明显的光色效应 .经线性偏振紫外光 (LPUV)辐射后的上述偶氮聚酰亚胺定向层能诱导液晶盒中液晶分子发生定向沿面排列 ,且取向均匀 .上述实验表明 ,合成的偶氮聚酰亚胺是一类潜在的液晶光定向材料 .     

新型环氧树脂基液晶光定向层材料的合成与性能研究

经双酚A型环氧树脂与苯胺缩聚反应,制备含有羟基的先驱聚合物EP-AN,通过EP-AN上羟基与肉桂酰氯的酯化反应,制备了侧链带有肉桂酸酯基团的光敏聚合物EP-AN-CI.用核磁共振(1HNMR)、傅里叶红外光谱(FTIR)和热分析等手段确定了上述聚合物的结构与性能.用FTIR等方法表征了EP-AN-CI的光交联反应.经线性偏振光聚合技术(LPP)处理聚合物EP-AN-CI膜制备成液晶定向层,通过装配液晶盒和偏光显微镜观察表明,所制备的定向层具有很好的定向能力,该聚合物是一类具有潜在应用价值的新型液晶光定向层材料.     

紫草素在玻碳电极上的电化学行为及应用

采用电化学测试方法测定了紫草素在玻碳电极上的电化学行为。结果表明,紫草素在玻碳电极产生一对氧化还原波,在pH为3.98及HAc-NaAc(20%乙醇)缓冲溶液中。证实该反应是以吸附控制为主的电极过程。同时,以氧化峰为对象的循环伏安法研究了峰电流与药物浓度的关系。峰值电流与紫草素浓度在2.08×10~(-8)～1.82×10~(-6)mol·L~(-1)范围内具有良好的线性关系。该方法可用于中草药紫草中紫草素及其衍生物总含量的测定,样品无需预处理即可直接测定。通过方波伏安法测出新疆特有紫草素的平均含量为9.063m·mg~(-1),相对标准偏差3.08%,证明采用此方法测定紫草素含量是可行的。