超导磁通量子比特低频磁通噪声的测量

在极低温下,我们对基于Nb／AlOx／Nb约瑟夫森结构成的超导磁通量子比特进行了测量,从粒子在双势阱的分布率和磁通的关系曲线中,分析得到了低频磁通噪声强度SФ（1Hz）．进一步我们测量了在不同温度下的SФ（1Hz）,结果表明在49．4mK到400mK温度区间,SФ（1Hz）随温度呈平方关系增长．     

Quantum nondemolition measurements of a flux qubit coupled to a noisy detector

We theoretically study the quantum nondemolition measurements of a flux qubit coupled to a noisy superconduct-ing quantum interference device (SQUID).The obtained analytical results indicate that the measurement probability is frequency-dependent in a short time scale and has a close relationship with the measurement-induced dephasing.Furthermore,when the detuning between the driven and bare resonator equals the coupling strength,we can obtain the maximum measurement rate that is determined by the character of the noise in the SQUID.Finally,we analysed the mixed effect caused by coupling between the non-diagonal term and the external variable.It is found that the initial information of the qubit is destroyed due to quantum tunneling between the qubit states.     

超导量子比特中的量子跳跃方法

量子力学自建立以来很长一段时间被当作是描述系综运动的理论.但是上世纪80年代对冈禁离子和原子的研究观测到了量子跳跃现象,迫使人们发展了一些能够用于单量子系统的方法,其中之一就是量子跳跃方法.本文总结了我们近来把量子跳跃方法应用到以约瑟夫森隧道结为基础的超导量子比特的工作.我们不但实验观测到宏观量子系统中的量子跳跃,还可以利用量子跳跃现象来研究固体中普遍存在的两能级系统及其引起的超导量子比特中的退相干.     

Increasing energy relaxation time of superconducting qubits with nonmagnetic infrared filter and shield

One of the primary origins of the energy relaxation in superconducting qubits is the quasiparticle loss. The quasiparticles can be excited remarkably by infrared radiation. In order to minimize the density of quasiparticle and increase the qubit relaxation time, we design and fabricate the infrared filter and shield for superconducting qubits. In comparison with previous filters and shields, a nonmagnetic dielectric is used as the infrared absorbing material, greatly suppressing the background magnetic fluctuations. The filters can be made to impedance-match with other microwave devices. Using the as-fabricated infrared filter and shield, we increased the relaxation time of a transmon qubit from 519 ns to 1125 ns.     

Fabrication of Al/AlO_x/Al junctions using pre-exposure technique at 30-keV e-beam voltage

We fabricate high-quality A1/A1O_x/A1 junctions using improved bridge and bridge-free techniques at 30-keV e-beam voltage,in which the length of undercut and the size of junction can be well controlled by the pre-exposure technique.The dose window is 5 times as large as that used in the usual Dolan bridge technique,making this technique much more robust.Similar results,comparable with those achieved using a 100-keV e-beam writer,are obtained,which indicate that the 30-keV e-beam writer could be an economic choice for the superconducting qubit fabrication.     

Demonstration of superadiabatic population transfer in superconducting qubit

We implemented the superadiabatic population transfer within the nonadiabatic regime in a two-level superconducting qubit system. To realize the superadiabatic procedure, we added an additional term in the Hamiltonian, introducing an auxiliary counter-diabatic field to cancel the nonadiabatic contribution in the evolution. Based on the superadiabatic procedure, we further demonstrated quantum Phase and NOT gates. These operations, which possess both of the fast and robust features, are promising for quantum information processing.     

High quality factor superconducting coplanar waveguide fabricated with TiN

We fabricated TiN coplanar waveguides using standard lithography techniques followed by ICP etch. In order to achieve high quality factor, we investigated the film growth by choosing different deposition conditions for various substrates. Quality factors of waveguide resonators were measured at 20 mK in both high and low microwave power limits. An inner quality factor of several million was achieved at high power limit for a predominantly(200)-oriented TiN film which was grown on HF cleaned silicon wafer. A quality factor of larger than one million was achieved at high power limit for TiN film grown on sapphire.     

Bridge-free fabrication process for Al/AlO_x/Al Josephson junctions

We fabricate different-sized Al/AlO_x/Al Josephson junctions by using a simple bridge-free technique, in which only single-layer E-beam resist polymethyl methacrylate(PMMA) is exposed at low accelerate voltage(below 30 kV) and the size of junction can be varied in a large range. Compared with the bridge technique, this fabrication process is very robust because it can avoid collapsing the bridge during fabrication. This makes the bridge-free technique more popular to meet different requirements for Josephson junction devices especially for superconducting quantum bits.     

Bi_（2．2）Sr_（1．8）Ca_（1．05）Cu（2．15－x）NaxO_

本文介绍了用熔融法制备Ｂｉ２．２Ｓｒ１．８Ｃａ１．０５Ｃｕ２．１５－ｘＮａｘＯ８＋ｙ（ｘ＝０，０．４～０．８）样品，发现诸样品零电阻温度都在９０Ｋ左右，其小ｘ＝０．７．Ｔｃ０达到９２，５Ｋ．在８１Ｋ较高温区，该类样品仍然表现出良好的超导电性，其临界电流密度还达到１０３Ａ／ｃｍ２量级．     

Tuning an rf-SQUID flux qubit system＇s potential with magnetic flux bias

At an extremely low temperature of 20 mK, we measured the loop current in a tunable rf superconducting quantum interference device (SQUID) with a dc-SQUID. By adjusting the magnetic flux applied to the rf-SQUID loop (Φ f ) and the small dc-SQUID (Φ cjj f ), respectively, the potential shape of the system can be fully controlled in situ. Variation in the transition step and overlap size in the switching current with a barrier flux bias are analyzed, from which we can obtain some relevant device parameters and build a model to explain the experimental phenomenon.