亚/超临界乙醇中羟基和氢自由基作用下的纤维素液化行为

以水杨酸为羟基自由基(HO·)捕捉剂、四氯化碳为氢自由基(H·)捕捉剂,采用间歇高压反应釜对玉米秸秆纤维素在亚/超临界乙醇中的液化行为进行了研究,通过考察自由基捕捉剂用量、反应温度和反应时间对纤维素液化行为的影响,研究亚/超临界乙醇产生的HO·和H·自由基对纤维素的液化作用。结果表明,随着水杨酸用量增加(0-4mL),HO·浓度升高,生物油收率由29.3%提高至47.9%,固体残渣收率从26.7%降低至24.3%;反应温度从250℃升高至320℃,HO·活性随之增强,生物油收率由35.9%升高至58.2%,固体残渣收率由51.8%降低至20.4%;随着四氯化碳用量由0增加为2mL时,H·浓度降低,生物油收率由24.7%降低至20.7%,固体残渣收率由54.1%增加至59.1%;反应时间从0到30min,液化作用不断增强,生物油收率从8.7%升高至28.5%,固体残渣收率由86.3%下降至60.9%;30min之后,四氯化碳对H·活性的抑制加强,导致液化作用减弱,生物油收率有所下降。实验结果表明,乙醇在亚/超临界状态下能够产生HO·和H·,且HO·和H·浓度和活性与反应条件相关,对纤维素液化产物的收率及其分布具有明显的影响。     

长效维生素B1—优硫胺的合成研究

作者报道了合成长效维生素B     

聚甲基丙烯酸－对－甲氧基偶氮苯氧己基酯的 液晶及光响应行为

合成并表征了侧链液晶高分子聚甲基丙烯酸－对－甲氧基偶氮苯氧己基酯（PMAAZO6）, 在不同条件下对其进行了光响应测试. 发现紫外光易诱导体系发生相转变;增加辐照光波长有利于分子发生整体取向. 不同温度下的光响应测试表明, 样品处于玻璃化转变温度之下是保持分子取向的前提.     

Neutron powder diffraction and high-pressure synchrotron x-ray diffraction study of tantalum nitrides

Tantalum nitride(TaN) compact with a Vickers hardness of 26 GPa is prepared by a high-pressure and hightemperature(HPHT) method. The crystal structure and atom occupations of WC-type TaN have been investigated by neutron powder diffraction, and the compressibility of WC-type TaN has been investigated by using in-situ high-pressure synchrotron x-ray diffraction. The third-order Birch–Murnaghan equation of state fitted to the x-ray diffraction pressure–volume(P–V) sets of data, collected up to 41 GPa, yields ambient pressure isothermal bulk moduli of B'_0= 369(2) GPa with pressure derivatives of B 0= 4 for the WC-type TaN. The bulk modulus of WC-type TaN is not in good agreement with the previous result(B_0= 351 GPa), which is close to the recent theoretical calculation result(B_0= 378 GPa). An analysis of the experiment results shows that crystal structure of WC-type TaN can be viewed as alternate stacking of Ta and N layers along the c direction, and the covalent Ta–N bonds between Ta and N layers along the c axis in the crystal structure play an important role in the incompressibility and hardness of WC-type TaN.     

均相催化活化杂原子-碳(E-C)键及其与炔烃的加成反应

系统总结了Ni、Pd、Pt、Rh、Cu等过渡金属配合物催化活化Si-C、Sn-C、S-C、Se-C、Cl-C、Br-C等杂原子-碳键及其与炔烃的加成反应.这些新型的炔烃加成反应提供了合成含R3Si、R3Sn、RS、RSe、Cl和Br等活性官能团烯烃化合物的原子经济型一步合成方法.同时加成反应体系具有很高的立体选择性和区域选择性.     

实方阵存在 Volterra乘子的判定

设Ａ为实方阵,熟知,若Ａ＋ＡＴ正定,则称Ａ亚正定;若存在正对角阵Ｄ,使得ＤＡ＋（ＤＡ）Ｔ正定,则称人广义亚正定,又若使得 ＤＡ＋（ＤＡ）Ｔ为正定矩阵,则称 Ｄ为Ａ的 Ｖａｌｔｅｒｒａ乘子．易证下列结果． 定理 １设 Ａ＝（ａｉｊ） ∈ Ｒｎｘｎ,且 Ａ＝ 则 Ａ亚正定的充要条件是亚正定． ２理 ２设Ａ＝（ａｉｊ）ｎｘｎ,则 Ａ存在Ｖｏｌｔｅｒｒａ乘子的充要条件是Ａ为广义亚正定阵． 定理 ３设 Ａ＝（ａｉｊ）ｎｘｎ,Ａ分块如定理 ２,若 Ａ１１,Ａ２２亚正定,则 Ａ存在 Ｖｏｌｔｅｒｒａ乘子． 定理 ４设 Ａ＝（ａｉｊ）…     

Pt/γ-Al2O3/CexZr1-xO2催化剂低温催化燃烧去除饮食油烟

以CexZr1-xO2固溶体做载体, 制备了系列Pt/γ-Al2O3/CexZr1-xO2催化剂(x=1, 0.75, 0.5, 0.25, 0). 应用Brunauer-Emmet-Teller (BET)比表面积分析、X射线衍射(XRD)和H2程序升温还原(H2-TPR)等手段对催化剂进行相关表征, 并系统研究了催化剂在饮食油烟催化燃烧中的催化活性. BET结果表明催化剂的比表面积随Ce/Zr摩尔比的减小而减小. XRD结果表明贵金属Pt很好地分散在氧化铝和CexZr1-xO2固溶体上. H2-TPR结果发现催化剂Pt/γ-Al2O3/Ce0.5Zr0.5O2的还原峰面积最大且氧离子的流动性最好. 催化活性研究结果表明Pt负载在CexZr1-xO2固溶体上有利于油烟的催化燃烧, 降低了反应温度. 随着CexZr1-xO2固溶体中Ce/Zr摩尔比的变化, 催化剂的活性顺序为Pt/γ-Al2O3/Ce0.5Zr0.5O2>Pt/γ-Al2O3/Ce0.25Zr0.75O2>Pt/γ-Al2O3/Ce0.75Zr0.25O2>Pt/γ-Al2O3/CeO2>Pt/γ-Al2O3/ZrO2.     

钇铝石榴石(YAG)透明陶瓷的研究进展EI北大核心CSCD

钇铝石榴石(Y_(3)Al_(5)O_(12))透明陶瓷具有机械强度高、物化性质稳定,特别是覆盖紫外、可见及红外光透过等优异性能,在固体激光器、导弹穹顶、红外窗口及透明装甲领域有着广泛的应用。本文系统总结了YAG透明陶瓷的制备工艺,包括粉体合成、坯体成型、陶瓷烧结及烧结助剂的选用,对比了不同工艺路线制备YAG透明陶瓷的性能、规格、成本等;就不同稀土离子掺杂对YAG基透明陶瓷性能的影响规律进行了全面阐述;最后通过对现有问题的总结,展望了钇铝石榴石(YAG)透明陶瓷未来的发展趋势。     

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.