首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   304507篇
  免费   3631篇
  国内免费   636篇
化学   163089篇
晶体学   4395篇
力学   12763篇
综合类   9篇
数学   36304篇
物理学   92214篇
  2020年   2584篇
  2019年   2698篇
  2018年   3620篇
  2017年   3606篇
  2016年   5531篇
  2015年   3565篇
  2014年   5285篇
  2013年   12947篇
  2012年   9713篇
  2011年   11859篇
  2010年   8195篇
  2009年   7814篇
  2008年   11126篇
  2007年   11197篇
  2006年   10451篇
  2005年   9375篇
  2004年   8507篇
  2003年   7640篇
  2002年   7513篇
  2001年   7987篇
  2000年   6264篇
  1999年   4841篇
  1998年   4256篇
  1997年   4205篇
  1996年   4095篇
  1995年   3758篇
  1994年   3969篇
  1993年   3739篇
  1992年   4119篇
  1991年   3996篇
  1990年   3972篇
  1989年   3751篇
  1988年   3872篇
  1987年   3770篇
  1986年   3561篇
  1985年   4811篇
  1984年   5044篇
  1983年   4254篇
  1982年   4399篇
  1981年   4338篇
  1980年   4262篇
  1979年   4211篇
  1978年   4561篇
  1977年   4450篇
  1976年   4495篇
  1975年   4144篇
  1974年   4148篇
  1973年   4326篇
  1972年   3004篇
  1971年   2524篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
992.
The surface of polystyrene was modified with the bovine serum albumin-Tween 80 complex. The adsorption of the complex and the formation of films on the surface of polystyrene were studied using the piezoelectric weighing method. The state of the modified surface was evaluated by contact angle measurements. The stability of the modifying layer was determined based on the critical interfacial energy values of the surface equilibrated with water. A conclusion was drawn that the complex can be effectively used to enhance the biocompatibility of polymer materials.  相似文献   
993.
The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al2O3(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 109–1010 cm−2. The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al2O3 as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.  相似文献   
994.
The stress relaxation process is linked to the change with time of the metric stress tensor of the medium. Possible types of thermodynamically justified relaxation equations are discussed.  相似文献   
995.
All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO2, ZnO, SnO2) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ  L2/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed.  相似文献   
996.
In experiment PAX, proposed for the new accelerator complex at GSI, investigations in the field of high-energy spin physics with the use of a polarized antiproton beam are planned. In this paper the possibilities for triggering are considered taking into account the PAX detector properties and a probable configuration of the trigger system is discussed for the first time. The text was submitted by the authors in English.  相似文献   
997.
We consider problems of continuation of vector functions from a subspace to the entire space and of smoothing problems for these functions. It is shown that there exists a reflexive separable spaceX and a subspaceY such that even a very smooth mapping ofY does not extend to a uniformly continuous mapping of a neighborhood ofY.Translated fromMatematicheskie Zametki, Vol. 58, No. 6, pp. 906–916, December, 1995.  相似文献   
998.
It is shown that toxicant MX can be reliably identified and determined quantitatively by ion-trap tandem mass spectrometry with an accuracy as high as that for high-resolution mass spectrometry.  相似文献   
999.
1000.
Thomas  M. F.  Case  G. S.  Bland  J.  Herring  A. D. F.  Stirling  W. G.  Tixier  S.  Boni  P.  Ward  R. C. C.  Wells  M. R.  Langridge  S. 《Hyperfine Interactions》2002,141(1-4):471-476
Hyperfine Interactions - Multilayers of Ce/Fe and U/Fe were fabricated by sputtering and studied by X-ray diffraction and reflectivity, Mössbauer spectroscopy and polarised neutron...  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号