Optical constants of lead telluride films in the range 5–11 μm

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 1, pp. 103–107, January, 1991.     

Contact melting in the lead-tellurium system

Contact melting (CM) in the lead-tellurium system is considered. Spontaneous temperature elevation is observed as a result of the exothermic reaction of lead telluride formation in the contact site. The effects of direct current (dc) and dopants on the CM temperature are studied.     

Chaotic buffering and its mathematical models

We propose a general idea of obtaining different chains of coupled oscillators with chaotic buffering. As examples, we consider chains of diffusively coupled generalized cubic Schrödinger equations and nonlinear telegraph equations. We also give examples of systems that have an infinite-dimensional chaotic attractor.     

Numerical simulation of critical dependences for symmetric two-layered Josephson junctions

Partial critical dependences of the form current-magnetic field in a two-layered symmetric Josephson junction are modeled. A numerical experiment shows that, for the zero interaction coefficient between the layers of the junction, jumps of the critical currents corresponding to different distributions of the magnetic fluxes in the layers may appear on the critical curves. This fact allows a mathematical interpretation of the results of some recent experimental results for two-layered junctions as a consequence of discontinuities of partial critical curves.     

Critical behavior of the wave functions of icosahedral quasicrystals

The character of the localization of the wave functions of an icosahedral quasicrystal is investigated in the tight-binding approximation. It is found that the wave functions exhibit “critical behavior”: they are neither localized, as in the case of Anderson localization, nor delocalized, as in the case of Bloch states. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 8, 559–563 (25 October 1996)     

Study of perfection of layers of AlGaSb(AS) solid solution

Studies have been carried out on the perfection of then-Al_xGa_1–xSb_1–yAs_y (0.12x0.26) layer grown on GaSb substrates under different conditions of lattice matching. During the relaxation of the mechanical stresses at first a system of tilt dislocations with a density of up to 5 · 10⁵ cm^–2 is formed while in thick layers (h 20 m) a network of misfit dislocations parallel to the heteroboundary is formed. The time required to dissolve a weighed amount of GaAs in the melt is shown to be of major importance for obtaining layers of a solid solution that are isoperiodic with the substrate. The entry of arsenic only in the initial portion of the epitaxial layer can reduce the dislocation density in the layer without decreasing the measured value of Aa. Dissolution of a weighed amount of GaAs in a Ga + Sb melt for two hours at T=730–750°C is sufficient to obtain layers of Al_xGa_1–xSb_1–yAs_y solid solution that are isoperiodic with the substrate.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 84–89, January, 1988.In conclusion, we thank L. V. Druzhinina for useful discussions as well as Z. V. Korotchenko, L. S. Khludkova, and F. S. Kim for assistance in the performance of the experiments.     

Coherence of synchrotron radiation

Gal'tsov et al. [Vestn. Mosk. Gos. Univ., Fiz., Astron.,14, No. 5, 614 (1973)] studied the radiation spectrum of N equally spaced charges moving along a circle. In particular, it was shown that as N the intensity of the radiation from the system of charges vanishes. The present study will consider the radiation spectrum of N charges moving along an arbitrary closed curve, randomly distributed in the vicinity of equally spaced points. The coherency factor will be found for the assumption that: a) the distributions of individual charges are not intercorrelated; b) the charge distribution is such that in the vicinity of a given point only one charge is found. It will be shown that as N the radiation intensity tends to a finite limit.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 8–11, March, 1988.     

On rational approximations of functions of complex variable integrable over plane domains

пУстьE — ИжМЕРИМОЕ пО лЕБЕгУ ОгРАНИЧЕННОЕ МНОжЕстВО пОлОжИтЕльНОИ плОЩА ДИ mes₂ E кОМплЕксНОИ плОск ОстИ с. кАк ОБыЧНО, пРИp≧1 ОБОжНАЧИМ ЧЕРЕжL ^p (E) БА НАхОВО пРОстРАНстВО ИжМЕРИ Мых пО лЕБЕгУ НАE кОМплЕксНОжНАЧНых Ф УНкцИИf с сУММИРУЕМО Иp—стЕпЕНьУ Их МОДУль И ОБыЧНОИ НОРМОИ \(\left\| \cdot \right\|_p = \left\| \cdot \right\|_{L_p (E)}\) . ЧЕР ЕжL ^p R _n (f,E) ОБОжНАЧИМ НАИМЕН ьшЕЕ УклОНЕНИЕf?L ^p (E) От РАц ИОНАльНых ФУНкцИИ ст ЕпЕНИ ≦n кОМплЕксНОгО пЕРЕМЕ ННОгОz пО НОРМЕ ∥ · ∥. пОлОжИМf(z)=0 Дльz?¯CE,E _δ —δ-ОкРЕстНОсть МНО жЕстВАE (δ>0), И $$\omega _p (\delta ,f) = \mathop {\sup {\mathbf{ }}}\limits_{\left| h \right|< \delta } \{ \int\limits_{E_\sigma } {\int {{\mathbf{ }}|f(z + h) - f(z)|^p } d\sigma } \} ^{1/p} .$$ тЕОРЕМА.пУсть 1≦p<2,f?L _p (E),n≧4.тОгДА $$\begin{array}{*{20}c} {L^p R_n (f,E) \leqq 12\omega _p \left( {\frac{{\delta + \ln n}}{{\sqrt n }},f} \right){\mathbf{ }}npu{\mathbf{ }}p = 1,} \\ {L^p R_n (f,E) \leqq \frac{{24}}{{(p - 1)(2 - p)}}\omega _p (n^{(p - 2)/2p} ,f){\mathbf{ }}npu{\mathbf{ }}1< p< 2,} \\ {L^1 R_n (\bar z,[0,1] \times [0,1]) \geqq \frac{1}{{32\sqrt n }}.} \\ \end{array} $$ .