全文获取类型
收费全文 | 33604篇 |
免费 | 1321篇 |
国内免费 | 1463篇 |
专业分类
化学 | 23795篇 |
晶体学 | 336篇 |
力学 | 888篇 |
综合类 | 15篇 |
数学 | 4854篇 |
物理学 | 6500篇 |
出版年
2023年 | 230篇 |
2022年 | 592篇 |
2021年 | 692篇 |
2020年 | 618篇 |
2019年 | 664篇 |
2018年 | 749篇 |
2017年 | 652篇 |
2016年 | 1266篇 |
2015年 | 973篇 |
2014年 | 1162篇 |
2013年 | 2640篇 |
2012年 | 2391篇 |
2011年 | 2643篇 |
2010年 | 1607篇 |
2009年 | 1769篇 |
2008年 | 2089篇 |
2007年 | 2015篇 |
2006年 | 1694篇 |
2005年 | 1573篇 |
2004年 | 1743篇 |
2003年 | 1330篇 |
2002年 | 1215篇 |
2001年 | 615篇 |
2000年 | 515篇 |
1999年 | 391篇 |
1998年 | 341篇 |
1997年 | 306篇 |
1996年 | 333篇 |
1995年 | 260篇 |
1994年 | 232篇 |
1993年 | 242篇 |
1992年 | 214篇 |
1991年 | 146篇 |
1990年 | 144篇 |
1989年 | 140篇 |
1988年 | 118篇 |
1987年 | 116篇 |
1986年 | 118篇 |
1985年 | 182篇 |
1984年 | 176篇 |
1983年 | 122篇 |
1982年 | 134篇 |
1981年 | 151篇 |
1980年 | 134篇 |
1979年 | 116篇 |
1978年 | 94篇 |
1977年 | 98篇 |
1976年 | 108篇 |
1975年 | 90篇 |
1974年 | 77篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
71.
Jean-Pierre Françoise 《Journal of Dynamics and Differential Equations》2008,20(4):777-786
This article is devoted to one-dimensional perturbative theory on R × S
1. There is a recursive formula for the successive obstructions to parametric center at any order of the perturbation parameter.
The first obstruction is studied by means of complex analysis techniques. This extends to the trigonometric case what was
done previously for the polynomial case (Israel J. Math. 142, 273–283, 2004).
This article is dedicated to Professor Zhang Zhi-Fen on the occasion of her 80th Birthday 相似文献
72.
J. Salgado E. Martinho I. F. Gonçalves 《Journal of Radioanalytical and Nuclear Chemistry》2004,260(2):317-320
The resonance neutron self-shielding factor, G
res, is required in neutron metrology and activation data analysis. In a previous paper, the authors have shown that a dimensionless
variable can be introduced which converts the dependence of G
res on the physical and nuclear properties of the material samples into an universal curve, valid for the isolated resonances
of any nuclide. This work presents a methodology based on the universal curve, which enables to calculate G
res for a group of isolated resonances by weighting its individual contributions. A good agreement was reached with results calculated
by the MCNP code and with experimental values for Mo foils and wires.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
73.
P. Pellegrino B. Garrido C. García R. Ferr J. A. Moreno J. R. Morante 《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):424
The ability of surface passivation to enhance the photoluminescence (PL) emission of Si nanocrystals in SiO2 has been investigated. Silicon precipitation in implanted samples takes place in a time scale of few minutes at 1100°C. For longer annealing at the same temperature, the PL intensity of the Si nanocrystals increases and eventually reaches saturation, while it correlates inversely with the amount of Si dangling bonds at the Si–SiO2 interface (Pb centers), as measured by electron spin resonance. This combined behavior is independent on the silica matrix properties, implantation profiles and annealing atmosphere and duration. The observation that the light emission enhancement is directly related to the annealing of Pb centers is confirmed by treatment in forming gas. This mild hydrogenation at much lower temperature (450°C) leads to a complete passivation of the Pb defects, increasing at the same time the PL yield and the lifetime. 相似文献
74.
The effects of n‐hexanol, n‐pentanol, and n‐butanol on the critical micelle concentration (cmc), on the micellar ionization degree (α), and on the rate of the reaction methyl 4‐nitrobenzenesulfonate + Br? have been investigated in cetyltrimethylammonium bromide (CTAB) aqueous solutions. An increase in the alcohol concentration present in the solution produces a decrease in the cmc and an increase in the micellar ionization degree. Kinetic data show that the observed rate constant decreases as alcohol concentration increases. This result was rationalized by considering variations in the equilibrium binding constant of the methyl 4‐nitrobenzenesulfonate molecules to the micelles, variations in the interfacial bromide ion concentration, and variations in the characteristics of the water–alcohol bulk phase provoked by the presence of alcohols. When these operative factors are considered, kinetic data in this and other works show that the second‐order rate constants in the micellar pseudophases of water–alcohol micellar solutions are quite similar to those estimated in the absence of alcohols. © 2004 Wiley Periodicals, Inc. Int J Chem Kinet 36: 634–641, 2004 相似文献
75.
We study the spectrum and eigenmodes of the QCD Dirac operator in a gauge background given by an instanton liquid model (ILM) at temperatures around the chiral phase transition. Generically we find the Dirac eigenvectors become more localized as the temperature is increased. At the chiral phase transition, both the low lying eigenmodes and the spectrum of the QCD Dirac operator undergo a transition to localization similar to the one observed in a disordered conductor. This suggests that Anderson localization is the fundamental mechanism driving the chiral phase transition. We also find an additional temperature dependent mobility edge (separating delocalized from localized eigenstates) in the bulk of the spectrum which moves toward lower eigenvalues as the temperature is increased. In both regions, the origin and the bulk, the transition to localization exhibits features of a 3D Anderson transition including multifractal eigenstates and spectral properties that are well described by critical statistics. Similar results are obtained in both the quenched and the unquenched case though the critical temperature in the unquenched case is lower. Finally we argue that our findings are not in principle restricted to the ILM approximation and may also be found in lattice simulations. 相似文献
76.
Marek Pękała Jan Mucha Benedicte Vertruyen Rudi Cloots Marcel Ausloos 《Journal of magnetism and magnetic materials》2006
Samples of La0.7Ca0.3Mn1−xGaxO3 with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn3+/Mn4+ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping. 相似文献
77.
Symmetric Hilbert spaces such as the bosonic and the fermionic Fock spaces over some lsquo;one particle space’ are formed by certain symmetrization procedures performed on the full Fock space. We investigate alternative ways of symmetrization
by building on Joyal's notion of a combinatorial species. Any such species F gives rise to an endofunctor of the category of Hilbert spaces with contractions mapping a Hilbert space to a symmetric Hilbert space with the same symmetry as the species F. A general framework for annihilation and creation operators on these spaces is developed, and compared to the generalised
Brownian motions of R. Speicher and M. Bożejko. As a corollary we find that the commutation relation with admits a realization on a symmetric Hilbert space whenever f has a power series with infinite radius of convergence and positive coefficients.
Received: 7 April 2000; in final form: 28 November 2000 / Published online: 19 October 2001 相似文献
78.
79.
80.
The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved. 相似文献