Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes

In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.     

拉哥LI-6200型光合作用分析系统中流量计的维修

拉哥ＬＩ－６２００型光合作用分析系统中流量计的维修王智辉＊赵光荣＊＊兰晓继（西北农业大学实验中心陕西杨陵７１２１００）分类号Ｏ６５２．７１前言拉哥ＬＩ－６２００型光合作用分析系统是美国拉哥公司（ＬＩ－ＣＯＲｉｎｃ）于８０年代末推出的新一代高精度的便携...