基于S3C44B0的触摸屏应用设计

介绍了利用μC/GUI在使用S3C44B0处理器的嵌入式系统中的触摸屏控制方法,并讨论了触摸屏控制器ADS7843的工作原理,以及与μC/GUI的连接技术,提供了一种简单有效的去除触摸屏抖动的方法,给出了在S3C44B0下触摸屏的编程方法,重点分析了μC/GUI的使用及其与触摸屏协同应用时所遇到的问题及解决方法,并给出了具体实例,以及引入μC/OS II嵌入式操作系统进行优化的方法。     

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-Ⅱ In As/GaSb superlattice

A very long wavelength infrared(VLWIR) focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×1010cm·Hz~(1/2)·W~(-1). The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.     

基于Nios Ⅱ的UART设计方法研究

通过讨论NiosⅡ处理器应用中的UART软件硬件设计方法,以及在设计过程中需要注意的问题,给出了UART寄存器的定义和UART波特率的计算方法,描述了硬件连接电路原理,具体说明了Nios Ⅱ系统中IP核的使用方法。同时,给出了Nios Ⅱ系统UART软件的数据结构,提供了一种简便可行的检测串口通信是否正常的方法,并给出了Nios Ⅱ下的串口中断编程方法。     

多FPGA系统在SoC验证中的应用

片上系统（SoC）是一个前沿的科研方向,随着其理论和技术的逐步成熟与完善,验证是一个非常重要的部分。实现一个实用的SoC,一般先要进行FPGA（现场可编程门阵列）验证。多片FPGA验证还处于起步阶段,其验证方法和工具有很大的研究和发展空间,本文给出了实用的多FPGA验证平台的结构,提出了涉及到的关键技术问题以及解决方案。     

太阳能充电系统控制结构研究与设计

太阳能技术是当今世界竞相研究的应用技术,太阳能充电是将光能转换为电能的一种应用方式.通过对太阳能电池板输出模型的研究以及太阳能充电系统效率的分析,得出充电效率的影响因素,提出为提高太阳能充电效率需要注意解决的问题,并以此提出了一整套完整的充电系统设计方案.经过设计、验证,该系统可完成充电要求,并一定程度的提高充电效率,而且可实现充电的控制.     

数据流图模型在SOPC上的应用

介绍了基于DFG(数据流图)模型的分析和优化,用于数字仪器设计的SOPC系统的软硬件协同设计方法,这种方法基于数字信号处理算法的数据流图模型,并应用SOPC技术实现.DFG模型能帮助设计者将系统功能分别划分为硬件和软件,给出的便携式逻辑分析仪SOPC系统级和电路级的优化表明,DFG模型不仅对于结构优化和降低功耗非常有效,对于软硬件协同设计也很有用.     

Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

In this paper we focused on the mask technology of inductively coupled plasma(ICP) etching for the mesa fabrication of infrared focal plane arrays(FPA).By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm~2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm~2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher(BOE) based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm~2 and the average detectivity of 4.51 × 10~9 cm·Hz~(1/2).W~(-1)at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference(NEDT) of 22.9 mK operating at 77 K.     

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_(0.24)Ga_(0.76)As_(0.21)Sb_(0.79)bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10~(-5)A/cm~2at 500 mV,thereby providing a detectivity of 1.55×10~(11)cm·Hz~(1/2)/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10~(-3)A/cm~2at-300 mV,thereby resulting in a detectivity of 2.71×10~(10)cm·Hz~(1/2)/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.